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    2SC3478A-T-A Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    Toshiba America Electronic Components 2SC3474

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    Toshiba America Electronic Components 2SC3474TE16L

    SILICON NPN EPITAXIAL TYPE TRANSISTOR Small Signal Bipolar Transistor
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    2SC347 Datasheets (96)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC347 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC347 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC347 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC347 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC347 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC347 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3470 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3470 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC3470 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3470 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3470 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3470 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3470 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3470 Unknown Cross Reference Datasheet Scan PDF
    2SC3470D Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3470E Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3470F Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3471 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3471 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3471 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC347 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    pa1476h

    Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
    Text: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674


    Original     		X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH PDF

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992


    Original     		X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SC3473 PDF

    b0239c

    Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514


    Original     		OT5503 OT5903 2N6409 2S01516 b0239c diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SC3474 Freq85M req85M PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


    Original     		2SC3474 20070701-JA C3474 2SC3474 PDF

    Hitachi DSA0076

    Abstract: 2SC1345 2SC3470
    Text: 2SC3470 Silicon NPN Epitaxial ADE-208-1086 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3470 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO


    Original     		2SC3470 ADE-208-1086 Hitachi DSA0076 2SC1345 2SC3470 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 東芝トランジスタ シリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。


    Original     		2SC3474 C3474 2SC3474 PDF

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


    Original     		2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 PDF

    C3474

    Abstract: 2SC3474
    Text: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)


    Original     		2SC3474 C3474 2SC3474 PDF

    2SC3475

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3475 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES : . Excellent Switching Times : tf=0.5tis Max. (Ic=2A) . Low Collector Saturation Voltage : VCE(sat)=0.6V(Max.) (Ic=2A)


    OCR Scan     		2SC3475 T0-220 2SC3475 PDF

    2sc3474

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015


    OCR Scan     		2SC3474 400mA) 300mA) 100mA 2sc3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3474 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3474 SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • U n it in mm High DC Current Gain : hpE = 500 Min. (Iç = 400 mA) Low Saturation Voltage : VcE (sat) = 0.5 V (Max.) (Iç = 300 mA)


    OCR Scan     		2SC3474 961001EAA PDF

    2SC1345

    Abstract: 2SC3470
    Text: HITACHI 2SC3470 — SILICON NPN EPITAXIAL LOW FREQ UEN C Y AM PLIFIER 1. E m ititr Î . Collector J. R*sr íDim eí'.tlíw^ in n w i 2-M-J . SPA K) I ABSO LU T E MAXIMUM RATINGS (Ta*25*C) Hem Symbol MAXIMUM COLLECTOR DISSIPATION CURVE 2SC3470 Unit Collector to base voltage


    OCR Scan     		2SC3470 2SC3470 2SC1345. 2SC1345 PDF

    2Sc3478

    Abstract: HP 3478A 2sc3478a PA33
    Text: NPN SILICON TRANSISTORS 2SC3478, 2SC3478A DESCRIPTION The 2SC3478/3478A is designed for general-purpose applica­ tions requiring high Breakdown Voltages. FEATURES • High Breakdown Voltage. V CEO = 180 V /2 0 0 V 2SC3478/2SC3478A • Good hpE linearity.


    OCR Scan     		2SC3478, 2SC3478A 2SC3478/3478A 2SC3478/2SC3478A) 2SA1376/2SA1376A. 2SC3478/2SC3478A 2SC3478 HP 3478A 2sc3478a PA33 PDF

    2SC3474

    Abstract: No abstract text available
    Text: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .


    OCR Scan     		2SC3474 400mA) 300mA) 2SC3474 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3470 Silicon NPN Epitaxial HITACHI Application Low frequency am plifier Outline SPAK I 1 23 1. Emitter 2. Collector 3. Base 487 2SC3470 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 55 V Collector to emitter voltage


    OCR Scan     		2SC3470 2SC3470 PDF

    2SC1345

    Abstract: No abstract text available
    Text: HITACHI 2SC3470 SILICON NPN EPITAXIAL LOW FREQ U EN C Y A M PLIFIER &SJH*» D.Í5 10-1 -. JJ.X9-Á Li J l. Empier !. CöUe<w * ft«c 'iüiaiei'iiiiK* ,nnvaj o a Í2.M -i SFA K • A BSO LU T E MAXIMUM RATIN G S (T*«25Ti SyMbol item MAXIMUM CO LLECTO R DISSIPATIO N


    OCR Scan     		2SC3470 2SC34T0 2SC1345. 2SC1345 PDF