2-7D101A
Abstract: 2SA1426 2SC3666 A1426 v30010
Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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c3666
Abstract: 2SC3666 2-7D101A
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC3666
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c3666
Abstract: 2-7D101A 2SC3666
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC3666
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C3666
Abstract: 2-7D101A 2SC3666
Text: 2SC3666 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3666 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE(1) = 100~320 絶対最大定格 (Ta = 25°C)
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2SC3666
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C3666
Abstract: 2-7D101A 2SC3666
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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Untitled
Abstract: No abstract text available
Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC3666
2-7D101A
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2-7D101A
Abstract: 2SA1426 2SC3666 A1426
Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SA1426
2SC3666.
2-7D101A
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Untitled
Abstract: No abstract text available
Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SA1426
2SC3666.
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C3666
Abstract: 2-7D101A 2SC3666
Text: 2SC3666 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3666 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE = 100~320 絶対最大定格 (Ta = 25°C)
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2SC3666
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a1426
Abstract: V30010 2-7D101A 2SA1426 2SC3666
Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SA1426
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO
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2SC3666
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Abstract: No abstract text available
Text: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)
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2-7D101A
Abstract: 2SC3666
Text: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2-7D101A
Abstract: 2SC3666
Text: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2-7D101A
Abstract: 2SA1426 2SC3666
Text: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)
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Text: T O SH IB A 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2SC3666
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2sc3667
Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Text: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00
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2SD1918
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2SD1920
2SC4027
2SD1246
2SD545
2SC2274
2SC3667
2SC3666
2SC3665
2SD1590
2SD1961
2SC269
2S01207
2SC4351
2SD1319
2SD1565
2SC2274
2SC2690A
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2sD1555
Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404
Text: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B
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2SD1850
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2SD4391
2SM583
2SD1483
2SD1554
2SD1994A
D1866
2SD1164
2SD1347
2SD2404
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2-7D101A
Abstract: 2SC3666
Text: TOSHIBA 2SC3666 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AU DIO POW ER AM PLIFIER APPLICATIO N S • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta= 2 5 °C ) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current VCB = 30V, Ie = 0 ICBO
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2SC3666
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Untitled
Abstract: No abstract text available
Text: 2SA1426 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 426 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hp g : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. 7,1 m a x S. 7 MAS MAXIMUM RATINGS (Ta = 25°C)
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2-7D101A
Abstract: 2SC3666
Text: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : (1) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2SC3666
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Untitled
Abstract: No abstract text available
Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2-7D101A
Abstract: 2SA1426 2SC3666
Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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2SA1426
SA142
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2-7D101A
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