2SC4115

Contextual Info: ST 2SC4115 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ˙Low VCE sat

c4115

Contextual Info: MCC TM Micro Commercial Components 2SC4115S-Q 2SC4115S-R 2SC4115S-S
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •F e a tu re s 1 ) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW V cE(sat). VcE(sat) = 0.2V (Typ.) (Ic / I 2) b = 2 A /0 .1 A ) E x c e lle n t c u rre n t g a in c h a ra c te ris ­

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

4115S

Abstract: transistor marking 2SA1585 2SC4115
Contextual Info: 2SC4115 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER B 3 2.6 4.25 2.4 3.75 Features — — 0.8 MIN Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) Excellent current gain characteristics. Complements to 2SA1585

9848

Abstract: 300-24 6551 2SC4115S 2SC4115-S CJC7113
Contextual Info: SPICE PARAMETER 2SC4115S by ROHM TR Div. * 2SC4115S NPN BJT model * Date: 2006/12/14 .MODEL 2SC4115S NPN + IS=500.00E-15 + BF=300.24 + VAF=23.700 + IKF=13.956 + ISE=500.00E-15 + NE=1.6551 + BR=105.07 + VAR=100 + IKR=.75363 + ISC=1.9215E-9 + NC=2.1772 + NK=.97444

c4115

Abstract: c4115s C4115-S
Contextual Info: MCC TM Micro Commercial Components 2SC4115S-Q 2SC4115S-R 2SC4115S-S
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating

npn smd 2a

Abstract: smd transistor 2A smd 2a transistor 2SC4115 smd transistor 560
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SC4115 Features Low VCE sat :VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage VCBO 40 V collector-emitter voltage

4115S

Abstract: 4115R
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SC4115S NPN Plastic-Encapsulate Transistors Power dissipation: PCM = 0.3W Tamb=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC4115S TRANSISTOR NPN TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PD: 0.3 W (Tamb=25℃) 3. BASE Collector current 3 A I CM: Collector-base voltage

2SC4115

Abstract: 2SA1585 4115S 4115
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585

Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

2SA1585S

Abstract: 2SC4115S SC-72
Contextual Info: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2

sit transistor

Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

2SC4115S

Contextual Info: 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W Tamb=25 I CM: 15.3 ±0.2 Collector current

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SC4115S 2SC4115S-Q 2SC4115S-R 2SC4115S-S NPN Plastic-Encapsulate Transistors Power dissipation: PCM = 0.3W Tamb=25ć

Contextual Info: MCC TM Micro Commercial Components 2SC4115S-Q 2SC4115S-R 2SC4115S-S
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating

2sd2152

Abstract: C4115S 2SC4115 C4115-S 2SD2154
Contextual Info: 2SC4115S/2SD2152/2SD2154/2SD2164 h 7 > y 7 £ /T ra n s is to rs 2 S C 4 1 1 5 2 S D 2 1 6 S / 2 S D 2 1 5 2 / 2 S D 2 1 5 4 / 4 Epitaxial Planar NPN Silicon Transistors • fô ft • ÿl-Jfi'ïf iiS l/D im e n s io n s Unit : mm 1) V c E ( s a t|* sß ^ ' o

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.

245 transistor

Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

2SC4115E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)

2SC4115S

Contextual Info: 2SC4115S 3 A , 40 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S High Current Capability High DC Current Gain Small Package Millimeter Min. Max. 3.90

2SA1585S

Abstract: 2SC4115S SC-72
Contextual Info: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2