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    2SC470 Search Results

    2SC470 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC4702XV-TR-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    SF Impression Pixel

    2SC470 Price and Stock

    TDK Corporation MEM2012SC470

    FILTER LC(T) 47PF SMD
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    DigiKey MEM2012SC470 Cut Tape 6,275 1
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    MEM2012SC470 Digi-Reel 6,275 1
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    MEM2012SC470 Reel 4,000 4,000
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    Sanken Electric Co Ltd 2SC4706

    TRANS NPN 600V 14A TO-3P
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    Quest Components 2SC4706 160
    • 1 $6.807
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    California Eastern Laboratories (CEL) 2SC4703-AZ

    RF TRANS NPN 12V 6GHZ SOT89
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    Eaton Bussmann UP2SC-470-R

    FIXED IND 47UH 1A 190 MOHM SMD
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    DigiKey UP2SC-470-R Reel 500
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    Rochester Electronics LLC 2SC4703-T1-AZ

    RF 0.15A, ULTRA HIGH FREQ BAND
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    DigiKey 2SC4703-T1-AZ Bulk 524
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    2SC470 Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC470 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC470 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC470 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC470 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC470 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC470 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC470 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC470 Unknown Cross Reference Datasheet Scan PDF
    2SC4700 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4700 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4700 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4700 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4700 ROHM EM3, UMT, SMT Transistors Scan PDF
    2SC4700 ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SC4700M ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SC4700N ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SC4700P ROHM Epitaxial Planar NPN Silicon Transistor Scan PDF
    2SC4702 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC4702 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC4702 Kexin Silicon NPN Epitaxial Original PDF

    2SC470 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4706

    Abstract: 2sc4706 NPN Transistor transistor 2sc4706
    Text: JMnic Product Specification 2SC4706 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SC4706 2SC4706 2sc4706 NPN Transistor transistor 2sc4706 PDF

    2SC4706

    Abstract: transistor 2sc4706 2sc4706 NPN Transistor
    Text: SavantIC Semiconductor Product Specification 2SC4706 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base


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    2SC4706 2SC4706 transistor 2sc4706 2sc4706 NPN Transistor PDF

    ic nec 2051

    Abstract: power supply ic 1507 nec 8039 2SC4703 NEC 2532 marking sh 2SC470-3 200MHZ 2SC4073
    Text: DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


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    2SC4703 2SC4703 dB/75 OT-89) ic nec 2051 power supply ic 1507 nec 8039 NEC 2532 marking sh 2SC470-3 200MHZ 2SC4073 PDF

    EN3687

    Abstract: 2SC4709
    Text: Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=2100V . · Small Cob (Cob typ=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process).


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    EN3687 2SC4709 2010C 2SC4709] O-220AB SC-46 EN3687 2SC4709 PDF

    2SC4706

    Abstract: transistor 2sc4706 2sc4706 NPN Transistor
    Text: 2SC4706 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA VCEO 600 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 600min V 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 130(Tc=25°C)


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    2SC4706 MT-100 100max 600min Pulse28) 160typ 2SC4706 transistor 2sc4706 2sc4706 NPN Transistor PDF

    SMD TRANSISTOR MARKING BR

    Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,


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    2SC4705 250mm2X0 100mA SMD TRANSISTOR MARKING BR MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12 PDF

    2SC4702

    Abstract: XV SOT23
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 VCEO = 300 V 0.4 3 High breakdown voltage 1 Cob = 1.5 pF Typ. 0.55 Small Cob 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


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    2SC4702 OT-23 2SC4702 XV SOT23 PDF

    2SA1810

    Abstract: 2SC4704 Hitachi 2SA Hitachi DSA00493
    Text: 2SC4704 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier


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    2SC4704 2SA1810 2SA1810 2SC4704 Hitachi 2SA Hitachi DSA00493 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SC4702 R07DS0275EJ0400 Previous: REJ03G0729-0300 Rev.4.00 Mar 28, 2011 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A


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    2SC4702 R07DS0275EJ0400 REJ03G0729-0300) PLSP0003ZB-A R07DS0275EJ0400 PDF

    Hitachi DSA002755

    Abstract: No abstract text available
    Text: 2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline 2SC4702 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO


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    2SC4702 Hitachi DSA002755 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications High hFE Applications Package Dimensions • Low-frequency general-purpose amplifier, drivers, muting circuits. unit:mm 2038A [2SC4705]


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    EN3484 2SC4705 2SC4705] 25max PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)


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    2SC4707 300mA) 2SA1811 100mA 300mA 300mA, PDF

    IC JRC circuits

    Abstract: No abstract text available
    Text: 2SC4705 No.3484 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications High hpg A p p licatio n s • Low-frequency general-purpose amp, drivers, m uting circuits Features • High DC current gain (hpE = 800 to 3200) • Low collector-to-emitter saturation voltage : Vce (sat)S 0.5V max


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    2SC4705 100mA, 100mA 7190MH IC JRC circuits PDF

    2sc4707

    Abstract: 2SA1811
    Text: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity ; 11F E 2 - ° U uvun.;, • , ± (J — O U U I I 1 . Í V


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    2SC4707 300mA) 2SA1811 75MAX O-92Mtruments, 2sc4707 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4702 Silicon NPN Epitaxial HITACHI Application High voltage amplifier Features • High breakdown voltage V ceo = 3 0 0 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 2 654 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings Ta = 25°C Item


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    2SC4702 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4704-Silicon NPN Epitaxial High Frequency Amplifier Feature TO-126 MOD • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier


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    2SC4704--------------Silicon 2SA1810 O-126 2SC47G4 2SC47 2SC4704 PDF

    2SC4699K

    Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
    Text: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1


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    2SC4699K/2SC4700 2SC4699K 2SC4700 10mA/1mA) 2SC4699K SC-59 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4702-Silicon NPN Epitaxial High Voltage Amplifier Features MPAK • High breakdown voltage v C eo = 300 v • Small Cob Cob = 1.5 pF Typ. Table 1 Absolute Maximum Ratings Ta = 25°C 4 Item Symbol Rating Unit Collector to base voltage


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    2SC4702------------Silicon 2SC4702 PDF

    2SC4699

    Abstract: T247
    Text: 2SC4699K/2SC4700 h " 7 > y 7. $ / T ransistors O C A ^ g g Q Ii It ° ^ d r y 7 J l '7 ° b - ^ N P N y U □ > h - 7 > y * 2 2SC4700 Epitaxial Planer NPN Silicon Transistor y ^-><7 % / F o r High-Speed Switching • • 1 i i i '0 •X'i i 'V J f iT f ii E l/ D im e n s io n s U n i t : m m )


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    2SC4699K/2SC4700 2SC4700 4699K 10mA/1 2SC4699 T247 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1811 T O SH IB A 2 S A 1 811 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpg Linearity : h p E 2 = 35(M in.), ( V q r = Complementary to 2SC4707


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    2SA1811 -300mA) 2SC4707 L/1V11 O-92MOD PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON IMPN EPITAXIAL TYPE mm • m m w LOW FREQUENCY AMPLIFIER APPLICATIONS. U nit in mm 5/1M A X DRIVER STAGE AMPLIFIER APPLICATIONS. • 8 .2 M A X . SWITCHING APPLICATIONS. Ex cellen t hjrg L in e a rity : hF E 2 = 35 (M in .), (V c


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    2SC4707 300mA) 2SA1811 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity . oer ; 11F E 2 — o u • /iv/r* UV11I1.;,


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    2SC4707 UV11I1. 2SA1811 PDF

    4214 ap

    Abstract: sem 2106 2SC4703 2SC470-3 transistor NEC D 587 ic nec 2051 transistor NEC D 586
    Text: DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion


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    2SC4703 2SC4703 OT-89) 4214 ap sem 2106 2SC470-3 transistor NEC D 587 ic nec 2051 transistor NEC D 586 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4704 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCE0 = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier


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    2SC4704 2SA1810 D-85622 PDF