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    2SC5 Search Results

    2SC5 Result Highlights (5)

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    2SC5594XP-TL-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
    2SC5624 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
    2SC5080 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
    2SC5894 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
    2SC5545 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
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    2SC5 Price and Stock

    ROHM Semiconductor 2SC5658T2LS

    TRANS NPN 50V 0.15A VMT3
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    DigiKey 2SC5658T2LS Cut Tape 41,096 1
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    2SC5658T2LS Digi-Reel 41,096 1
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    2SC5658T2LS Reel 40,000 8,000
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    TME 2SC5658T2LS 20
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    Ameya Holding Limited 2SC5658T2LS 100 1
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    Avnet Silica 2SC5658T2LS 8,000 16 Weeks 8,000
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    Chip One Stop 2SC5658T2LS Cut Tape 6,630
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    Chip-Germany GmbH 2SC5658T2LS 6,715
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    New Advantage Corporation 2SC5658T2LS 8,000 1
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    Toshiba America Electronic Components 2SC5087R(TE85L,F)

    RF TRANS NPN 12V 8GHZ SMQ
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    DigiKey 2SC5087R(TE85L,F) Cut Tape 5,736 1
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    2SC5087R(TE85L,F) Digi-Reel 5,736 1
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    2SC5087R(TE85L,F) Reel 3,000 3,000
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    ROHM Semiconductor 2SC5868TLR

    TRANS NPN 60V 0.5A TSMT3
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    DigiKey 2SC5868TLR Digi-Reel 3,000 1
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    2SC5868TLR Reel 3,000 3,000
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    onsemi 2SC5566-TD-E

    TRANS NPN 50V 4A PCP
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    DigiKey 2SC5566-TD-E Digi-Reel 1,765 1
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    2SC5566-TD-E Cut Tape 1,765 1
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    2SC5566-TD-E Reel 1,000 1,000
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    Mouser Electronics 2SC5566-TD-E 8,566
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    Newark 2SC5566-TD-E Cut Tape 8,141 1
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    RS 2SC5566-TD-E Bulk 1
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    Onlinecomponents.com 2SC5566-TD-E
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    Rochester Electronics 2SC5566-TD-E 671,313 1
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    TME 2SC5566-TD-E 155 1
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    Avnet Asia 2SC5566-TD-E 21 Weeks 4,000
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    Avnet Silica 2SC5566-TD-E 22 Weeks 1,000
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    Chip One Stop 2SC5566-TD-E Cut Tape 850
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    EBV Elektronik 2SC5566-TD-E 23 Weeks 1,000
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    Kyocera AVX Components 1812SC562KAT1A

    CAP CER 5600PF 1.5KV X7R 1812
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    DigiKey 1812SC562KAT1A Reel 1,500 1,000
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    Avnet Americas 1812SC562KAT1A Reel 1,000 14 Weeks 1,000
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    Newark 1812SC562KAT1A Reel 1,000 1,000
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    Bristol Electronics 1812SC562KAT1A 2,367
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    Avnet Abacus 1812SC562KAT1A Reel 143 Weeks 1,000
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    2SC5 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC50 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC50 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC50 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC50 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC50 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC50 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC50 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC50 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC500 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC500 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC500 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC500 Unknown Cross Reference Datasheet Scan PDF
    2SC500 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC500 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC500 Unknown Vintage Transistor Datasheets Scan PDF
    2SC500 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC500 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC500 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5000 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1887 Original PDF
    ...

    2SC5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5563

    Abstract: No abstract text available
    Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    2SC5563 SC-67 2-10R1A 2SC5563 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)


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    2SC5446 2-21F2A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 s max , tf = 0.3 μs (max) • High collector breakdown voltage: VCEO = 400 V


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    2SC5355 PDF

    2SA1909

    Abstract: 2SC5101
    Text: Inchange Semiconductor Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol


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    2SA1909 2SC5101 2SA1909 2SC5101 PDF

    SMD TRANSISTOR MARKING BR

    Abstract: 2SC5209 marking RH
    Text: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO


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    2SC5209 100mA 500mA -10mA SMD TRANSISTOR MARKING BR 2SC5209 marking RH PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


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    2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


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    2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


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    2SA2094 2SC5866 SC-96) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825


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    2SA2701 2SA2702 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 -500mV 2SA2072 SC-63) PDF

    2sc5464

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC5464 2sc5464 PDF

    2sa1943 toshiba transistor

    Abstract: No abstract text available
    Text: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.


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    2SA1943 2SC5200 2-21F1A -230V 2sa1943 toshiba transistor PDF

    2SC5242

    Abstract: No abstract text available
    Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.


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    2SC5242 2SA1962 2-16C1A 2SC5242 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)


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    2SC5096 S21el2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5129 U nit in mm HORIZO NTAL DEFLECTION O U TPU T FOR HIGH RESOLUTION DISPLAY, COLOR TV. 1 5.5 ± 0.5 a 3.6 ±0.3 • • • • - 3 ^ - - .1- HIGH SPEED SW ITCHING APPLICATIONS. 3 0±0.3 H igh Speed : tf= 0.15/js Typ.


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    2SC5129 15/js PDF

    tr 2sc5200

    Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
    Text: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


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    2SC5200 2SA1943 2-21F1A tr 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr


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    2SC5076 --10mA, PDF

    2SC5172

    Abstract: No abstract text available
    Text: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A


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    2SC5172 2SC5172 PDF

    LT 7706

    Abstract: LT 7207
    Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)


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    2SC5097 -j250 LT 7706 LT 7207 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1


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    2SC5086 PDF

    2SA1941

    Abstract: 2SC5198
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage


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    2SC5198 2SA1941 2SC5198 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO


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    2SA1899 2SC5052. ----120V, --10mA, --100mA --500mA, --50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)


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    2SC5376 400mA OL44IUSYMBOL PDF

    fe 5571

    Abstract: KS 0302
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB


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    2SC5183 SC-61 2SG5183-T1 2SC5183-T2 fe 5571 KS 0302 PDF

    nec 13772

    Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p


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    2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm PDF