Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC511 Search Results

    2SC511 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC511 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC511 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC511 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC511 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC511 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC511 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC511 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC511 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC511 Unknown Cross Reference Datasheet Scan PDF
    2SC5110 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC5110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC5110 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5110 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5110 Toshiba NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) Scan PDF
    2SC5110 Toshiba NPN Transistor Scan PDF
    2SC5110-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5110Y Toshiba Silicon NPN Epitaxial Planar Transistor Scan PDF
    2SC5110-Y Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5111 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC5111 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC511 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5111FT

    Abstract: No abstract text available
    Text: 2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage


    Original     		PDF 2SC5111FT 2SC5111FT

    2SC5111

    Abstract: No abstract text available
    Text: 2SC5111 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5111 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧


    Original     		PDF 2SC5111 -j150 -j100 -j250 2SC5111

    2SC5111

    Abstract: No abstract text available
    Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage


    Original     		PDF 2SC5111 2SC5111

    2SC5111

    Abstract: No abstract text available
    Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO


    Original     		PDF 2SC5111 2SC5111

    Untitled

    Abstract: No abstract text available
    Text: 2SC5116 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)550 V(BR)CBO (V) I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.50


    Original     		PDF 2SC5116

    IC 1298

    Abstract: marking 603 npn transistor
    Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO


    Original     		PDF 2SC5110 SC-70 IC 1298 marking 603 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage


    Original     		PDF 2SC5111

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage


    Original     		PDF 2SC5110 2SC5110

    Untitled

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


    OCR Scan     		PDF 2SC5110 SC-70 --j50

    2SC5111

    Abstract: No abstract text available
    Text: 2SC5111 TOSHIBA 2 S C 5 1 11 T O S H IB A TRA N SIST O R FOR VCO A PPLIC A TIO N SILICON NPN EPIT A X IA L PLA N A R TYPE Unit in mm M A X IM U M RATING S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    OCR Scan     		PDF 2SC5111 2SC5111

    2SC5111

    Abstract: No abstract text available
    Text: 2SC5111 TO SH IBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


    OCR Scan     		PDF 2SC5111 2SC5111

    S21C HF

    Abstract: s21c Z804
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC5110 U n it in mm FOR V C O A PPLIC A T IO N M A X IM U M R A T IN G S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Em itter V oltage E m itter-B ase V oltage Collector C urrent Base C urrent


    OCR Scan     		PDF 2SC5110 SC-70 S21C HF s21c Z804

    Untitled

    Abstract: No abstract text available
    Text: 2SC5111 FT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FT FOR VCO APPLICATION U n it in mm 1.2 ± 0 .0 5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    OCR Scan     		PDF 2SC5111

    2SC5111

    Abstract: No abstract text available
    Text: 2SC5111 TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm r0.8 .0.1-i ± M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    OCR Scan     		PDF 2SC5111 2SC5111

    Untitled

    Abstract: No abstract text available
    Text: 2SC5111 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm r0.8 ,0.1-i ± MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


    OCR Scan     		PDF 2SC5111 --j50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5110 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 <;r s 1 1 n WÊF wmr • ■ FOR VCO APPLICATION U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    OCR Scan     		PDF 2SC5110

    Untitled

    Abstract: No abstract text available
    Text: Transistors High Voltage Switching Transistor Power supply 2SC5113 •F e a tu re s 1) • E x t e r n a l d im e n s io n s (Units: m m ) H ig h -s p e e d sw itch ing. 4.5: 10.0 tag = 0 .8 ju s (T y p .) (Ic = 2 .5 A ) * ft+0.2 ti = 0 .0 8 f i s (T yp .) (Ic = 2 .5 A )


    OCR Scan     		PDF 2SC5113 -220FN 0Dlb713 -220FN 220FP -220FP.

    sp 0631

    Abstract: TE 2556
    Text: 2SC5111 TOSHIBA nrsm TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE wêêêf FOR VCO APPLICATION a r • ■ ■ U n it in mm 1.6 ±0.2 .0810.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2SC5111 sp 0631 TE 2556

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5110 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 10 Unit in mm 2.1 ± 0.1 1.25 ± 0 .1 | MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2SC5110 SC-70

    2SC5110

    Abstract: No abstract text available
    Text: 2SC5110 TOSHIBA 2 S C 5 1 10 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation


    OCR Scan     		PDF 2SC5110 2SC5110

    Untitled

    Abstract: No abstract text available
    Text: 2SC5111F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ? s r R 111 F FOR VCO APPLICATION MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


    OCR Scan     		PDF 2SC5111F

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5110 TOSHIBA TRANSISTOR 2 S SILICON NPN EPITAXIAL PLANAR TYPE C 5 1 1 Unit in mm FOR VCO APPLICATION 2.1 ± 0.1 M A X IM U M R A T IN G S Ta = ? S °C l CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current


    OCR Scan     		PDF 2SC5110 SC-70

    Untitled

    Abstract: No abstract text available
    Text: 2SC5111 T O SH IB A TOSHIBA TRANSISTOR 2 SILICON NPN EPITAXIAL PLANAR TYPE S C 5 1 11 Unit in mm FOR VCO APPLICATION M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current


    OCR Scan     		PDF 2SC5111

    2SC5113

    Abstract: 2SC1740SR
    Text: Transistors High Voltage Switching Transistor Power supply 2SC5113 •F e a tu re s ►External dimensions (Units: mm) 1) High-speed switching. tstg ti = 0.8 pcs (Typ.) (le = 2.5A) ,+0.3 ~£1 ,+ 0 .3 3 - 0.1 = 0.08 ¡x s (Typ.) (le = 2.5A) ¿ 3 .2 ± 0 .?


    OCR Scan     		PDF 2SC5113 2SC2412 K/2SC4081/2SC4617/2SC1740S 2SC5113 2SC1740SR