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    2SC5175 Search Results

    2SC5175 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5175 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TPL; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1933 Original PDF
    2SC5175 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5175 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5175 Toshiba Silicon NPN transistor for high current switching applications Scan PDF

    2SC5175 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc5175

    Abstract: No abstract text available
    Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5175 2-10T1A 2sc5175

    Untitled

    Abstract: No abstract text available
    Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5175 2-10T1A

    2SC5175

    Abstract: No abstract text available
    Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5175 2SC5175

    Untitled

    Abstract: No abstract text available
    Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5175

    A1933

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175
    Text: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1933 2SC5175 A1933 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175

    2SA1933

    Abstract: 2SC5175 A1933
    Text: 2SA1933 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1933 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = −0.4 V (最大) (IC = −2 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SA1933 2SC5175 2-10T1A 20070701-JA 2SA1933 2SC5175 A1933

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    Untitled

    Abstract: No abstract text available
    Text: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1933 2SC5175

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC5175 U n it in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • Low Saturation Voltage : V ç e s a t ~0.4V (MAX.) (at Ic = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8//s (Typ.) M A X I M U M R A T IN G S (Ta = 25°C)


    OCR Scan     		PDF 2SC5175 125mA) 125mA 125mA

    2SC5175

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) • High Speed Switching Time : tstg = 0.8/¿s (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5175 125mA) 100ual 2SC5175

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5175 <;c s 1 7 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE mm w • wmr m HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low Satu ratio n Voltage 1 0 * 0-2 ; V C E s a t = 0-4_v" (M A X .) (a t I c = 2.5À, lB = Ì25 m À ) • <¿1.2


    OCR Scan     		PDF 2SC5175

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CU RRENT SW ITCHIN G APPLICATIONS. • • • 2SA1933 Low Saturation Voltage : VCE (sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : tgtg^l.O ^s (Typ.) Complementary to 2SC5175


    OCR Scan     		PDF 2SA1933 2SC5175 2-10T1A --10mA, 20fis

    2SC5175

    Abstract: No abstract text available
    Text: 2SC5175 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8/¿s (Typ.)


    OCR Scan     		PDF 2SC5175 125mA) 2SC5175

    RB50

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE i <;r s 1 h t • 7s * h t HIGH CURRENT SWITCHING APPLICATIONS • U nit in mm Low Saturation Voltage : V c e s a t = 0.4V (MAX.) (at I c = 2.5A, Iß = 125mA) • 10 ± 0.2 , a 1.2 High Speed Switching Time


    OCR Scan     		PDF 2SC5175 125mA) 2-10T1A RB50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : V c E s a t = °-4V (MAX.) ( a t Ic = 2.5A, IB = 125mA) High Speed Switching Time • 10 ± 0.2 I 01.2


    OCR Scan     		PDF 2SC5175 125mA)

    Untitled

    Abstract: No abstract text available
    Text: 2SA1933 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 933 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat)= -0 .4 V (Max.) at I c = -3 A High Speed Switching Time : tg^g= 1.0/is (Typ.)


    OCR Scan     		PDF 2SA1933 2SC5175

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • INDUSTRIAL APPLICATIONS U nit in mm Low Saturation Voltage 10 ± 0.2 : v C E (sa t)= -0 * 4 V (Max.) at I c = - 3 A • High Speed Switching Time : t stg = 1 . 0 / j s (Typ.)


    OCR Scan     		PDF 2SA1933 2SC5175

    Untitled

    Abstract: No abstract text available
    Text: 2SA1933 TO SH IBA 2 S A 1 933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : v CE(sat) = -0.4V (Max.) at I q = - 2 A High Speed Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan     		PDF 2SA1933 2SC5175

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266