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    2SC5307 Search Results

    2SC5307 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5307 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5307 Toshiba Silicon NPN transistor for high voltage switching applications Scan PDF
    2SC5307 Toshiba TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: 2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC5307 SC-62

    2SC5307

    Abstract: No abstract text available
    Text: 2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5307 2SC5307

    Untitled

    Abstract: No abstract text available
    Text: 2SC5307 東芝トランジスタ シリコンNPN三重拡散形 2SC5307 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • コレクタ・エミッタ間飽和電圧が低い。 : VCEO = 400 V : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA)


    Original     		PDF 2SC5307

    Untitled

    Abstract: No abstract text available
    Text: 2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications • High breakdown voltage : • Low collector-emitter saturation voltage Unit: mm VCEO = 400 V : VCE sat = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5307 SC-62

    Untitled

    Abstract: No abstract text available
    Text: 2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SC5307 SC-62

    2SC5307

    Abstract: ic501
    Text: 2SC5307 東芝トランジスタ シリコンNPN三重拡散形 2SC5307 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)


    Original     		PDF 2SC5307 SC-62 2SC5307 ic501

    Untitled

    Abstract: No abstract text available
    Text: TB6819AFG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6819AFG Critical Conduction Mode CRM PFC Controller IC Features • Operating voltage range: 10.0 to 25 V • Startup voltage: 12.0 V (typ.) • Maximum drive current: 1.0 A • Variety of protection circuits


    Original     		PDF TB6819AFG OP8-P-225-1

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    NTPA73R0LBMB0

    Abstract: No abstract text available
    Text: TB6819AFG 東芝BiCD集積回路 シリコン モノリシック TB6819AFG CRM（電流臨界モード）方式 PFC 制御 IC 特 長 • 動作電圧範囲：10.0 to 25V • 起動電圧：12.0V typ. • 最大ドライブ電流：1.0A • 各種保護回路を内蔵


    Original     		PDF TB6819AFG OP8-P-225-1 NTPA73R0LBMB0

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    transistor 2sc5353

    Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
    Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000


    Original     		PDF DP0540001 200kHz 200kHz 280ns transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA

    6819AG

    Abstract: 1N4007 toshiba zener diode 1n400 diode 1n4007 toshiba diode rm10A LH26-402Y3R0-01 marking code c 9 toshiba NTPA73R0LBMB0 capacitor j2c traffic light using 68K
    Text: TB6819AFG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6819AFG Critical Conduction Mode CRM PFC Controller IC Features • Operating voltage range: 10.0 to 25 V • Startup voltage: 12.0 V (typ.) • Maximum drive current: 1.0 A • Variety of protection circuits


    Original     		PDF TB6819AFG OP8-P-225-1 2012-0ontrolled 6819AG 1N4007 toshiba zener diode 1n400 diode 1n4007 toshiba diode rm10A LH26-402Y3R0-01 marking code c 9 toshiba NTPA73R0LBMB0 capacitor j2c traffic light using 68K

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5307 250mm2X0

    2SC5307

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V^ e o -^OOV • Low Saturation Voltage •• V/"cm ' = 0 A\T Cy -Tjvr n- s Ì I n = 9.0m A Tn -J3 0.4 ±0.05


    OCR Scan     		PDF 2SC5307 250mm2 2SC5307

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 SC 5 3 0 7 HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V ç;e O = 400V Low Saturation Voltage : VCE sat - °-4V (TyP-) dC - 20mA, lg = 0.5mA) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5307

    2SC5307

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5307 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SW ITCHING APPLICATIONS • • High Voltage : V0 e O ~ 4OOV Low Saturation Voltage : V eE sat = °-4V (TyP-) d e = 20mA, Iß = 0.5mA) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5307 250mm2 2SC5307

    2SC5307

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V^ e o -^OOV Low Saturation Voltage • V/"cm = 0 A\T C T v n Ì I n = 9.0m A Tn = 0 R m A Ì MAXIMUM RATINGS (Ta = 25°C


    OCR Scan     		PDF 2SC5307 250mm2 2SC5307

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266