2sc536

Abstract: transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR
Contextual Info: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: T O S H IB A 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS <¿3.1 ±0. 5.8 DC-DC CONVERTER APPLICATIONS High Speed : tr =0.5,«s Max.), tf=0.3/*s (Max.)

NEC 2561 LE 401

Abstract: la 7433 ltg 0351 6605 SP LTG 0222 Ic fr 9888
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AM PLIFICATION FEATURES PACKAGE DIMENSION in mm • High f j 2.1 ±0.1 14 G H z TYP. 1.25+0.1 • High gain * -► 1 1 6 , 5 A X 1

Ic fr 9888

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTO R FOR MICROWAVE AMPLIFICATION PACKAGE DIMENSION in mm FEATURES • H ig h fT 2 . 1± 0.1 14 G H z T Y P . • H ig h gain | S 2i e | 2 = 1 4 d B T Y P . o o @ f = 2 GHz, V

2SC5369

Abstract: MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION in mm • High f T 2.1±0.1 14 GHz TYP. 1.25±0.1 • High gain 0.2 –0 6 4 5 1 2 3 • 6-pin small mini mold package

2SC5361

Contextual Info: TO SH IBA 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS Unit in mm 1 0 .3 M A X . 1.32 • Excellent Switching Times : tf = 0.5 jus Max. (l£ = 1.2 A)

2SC5363

Abstract: SC-75
Contextual Info: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)

Contextual Info: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)

2sc536

Abstract: 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536
Contextual Info: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sc536

Abstract: 2sc536 noise figure 2SC536 transistor transistor 2sC536
Contextual Info: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC536 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

2SC5361

Contextual Info: TOSHIBA 2SC5361 2SC5361 TO S H IB A TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS HIGH V O LTAG E SW ITCHING APPLICATIO NS 10.3MAX. DC-DC CONVERTER APPLICATIO NS • • • 1.32 Excellent Switching Times : tf = 0.5 /¿s Max. (l£ = 1.2 A)

transistor npn C536

Contextual Info: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V

2SC5363J

Abstract: 2SC536
Contextual Info: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 1.00±0.05 • Features 0.50 (0.50) Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)

2SC5360

Abstract: 5360
Contextual Info: TO SH IBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency = 300V Cob = 5.0pF Typ. fT = 100MHz (Typ.) V CE O MAXIMUM RATINGS (Tc = 25°C)

2SA60

Abstract: 2SA608N 2SC536N IT00504 IT00498 2SC536
Contextual Info: Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Capable of being used in the low frequency to high frequency range. unit:mm 2164 [2SA608N/2SC536N]

Contextual Info: T O S H IB A 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. (Iq = 1.2 A)

Contextual Info: TOSHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency VCEO=300V Cob = 5.0pF Typ. fT =100MHz (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC536S TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: TO SHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS U n it in mm 10 ±0.3 • High Voltage ^3.2 ±0.2 2.71Q.2 : VCEO = 300V • Sm all Collector Output Capacitance : Cob = 5.0pF Typ. • High Transition Frequency

c5368

Abstract: transistor npn C536 2SC5368
Contextual Info: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V

transistor npn C536

Abstract: C5361 2SC5361
Contextual Info: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V

2SC5361

Contextual Info: TOSHIBA 2SC5361 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX. DC-DC CONVERTER APPLICATIONS • • • 1.32 Excellent Switching Times : tf = 0.5 /us Max. (l£ = 1.2 A)

2SC5368

Contextual Info: TOSHIBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS ¿3.1 ±0.1 5.8 DC-DC CONVERTER APPLICATIONS ÏHigh Speed : tr = 0.5/^s (Max. , tf=0.3/*s (Max.) (IC = 0.8A)