2SC5436
Abstract: 2SC5668
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)
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PA844TC
2SC5436,
2SC5668)
S21e2
2SC5436
2SC5668
PA844
2SC5436
2SC5668
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2SC5436
Abstract: 2SC5600 NEC 821
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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PA842TC
2SC5436,
2SC5600)
S21e2
2SC5436
2SC5600
2SC5436
2SC5600
NEC 821
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2SC5436
Abstract: 2SC5786 4550 nec IC 7432 data
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor
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PA861TC
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
2SC5436
2SC5786
4550 nec
IC 7432 data
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marking TN
Abstract: transistor c 5083 2SC5186 2SC5436
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.)
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2SC5436
marking TN
transistor c 5083
2SC5186
2SC5436
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2SC5436
Abstract: 2SC5800 low vce transistor
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TS
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
2SC5436
2SC5800
low vce transistor
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Untitled
Abstract: No abstract text available
Text: NPN SILICON RF TWIN TRANSISTOR PA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA861TD
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
PU10057EJ02V0DS
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2SC5186
Abstract: 2SC5436 2SC5436-T1 nec 7440
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package
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2SC5436
2SC5186
2SC5436-T1
2SC5186
2SC5436
2SC5436-T1
nec 7440
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2SC5436
Abstract: 2SC5800 uPA863TD-Q2
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
2SC5436
2SC5800
uPA863TD-Q2
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MARKING 6260
Abstract: 2SC5436 2SC5800 P1573 uPA863TC-T1
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: High gain transistor suited for buffer applications
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PA863TC
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
MARKING 6260
2SC5436
2SC5800
P1573
uPA863TC-T1
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ZO 607 MA
Abstract: 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5436, 2SC5600)
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PA842TC
2SC5436,
2SC5600)
S21e2
2SC5436
2SC5600
ZO 607 MA
421-5
RF NPN POWER TRANSISTOR C 10-12 GHZ
552-1
741 IC data sheet
901 704 16 08 55
2SC5436
2SC5600
A 3120 0532 8 pin
a 3120 0537
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14-802-12
Abstract: 2SC5786 2SC5436
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
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PA861TD
2SC5436,
2SC5786)
S21e2
2SC5436
2SC5786
14-802-12
2SC5786
2SC5436
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nec d 882 p transistor
Abstract: 2SC5436 2SC5668
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)
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PA844TC
2SC5436,
2SC5668)
S21e2
2SC5436
2SC5668
PA844ce
nec d 882 p transistor
2SC5436
2SC5668
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TS
2SC5436,
2SC5800)
2SC5436
2SC5800
PU10333EJ02V0DS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TS
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
PU10333EJ01V0DS
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2SC5436
Abstract: NESG2107M33
Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA868TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor
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PA868TS
2SC5436,
NESG2107M33)
S21e2
2SC5436
NESG2107M33
2SC5436
NESG2107M33
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
2SC5436
2SC5800
P15686EJ1V0DS
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st zo 607
Abstract: 2SC5436 2SC5800 30614
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor
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PA863TD
2SC5436,
2SC5800)
S21e2
2SC5436
2SC5800
st zo 607
2SC5436
2SC5800
30614
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nec A1394
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Transistor a1488
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.)
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OCR Scan
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2SC5436
2SC5186
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