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Abstract: No abstract text available
Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Rating Collector-emitter voltage E-B short VCES 1 700 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO
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2SC5553
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2SC5553
Abstract: No abstract text available
Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current
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2SC5553
SC-94
2SC5553
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2SC5553
Abstract: C5553
Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) 5° 5° 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600
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2SC5553
2SC5553
C5553
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2SC5553
Abstract: No abstract text available
Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm 15.5±0.5 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current ICP 30 A Collector current
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2SC5553
2SC5553
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2SC5553
Abstract: No abstract text available
Text: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)
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2SC5553
2SC5553
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2SC5521
Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546
Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
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500V/1600V/1700V/1800V/2000V
2SC5521
2SC5522
2SC5584
2sc5524
2SC5517
2SC5516
2SC5516 equivalent
2sc5572
2SC5622
2SC5546
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SC5553 transistor
Abstract: transistor 3E TO36 2sc5522 M.P Diode
Text: Horizontal Deflection Transistor Series for TV • Overview B ased on accum ulated m anufacturing technology, these horizontal deflection transistors for TVs offer high perform ance and com pact design. T hey can also w ithstand high voltage and m aintain low loss. T hey also have a broad area o f safeoperation, despite an absolutely m inim al chip area which allow s very com pact package configuration. These advanced
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500V/1600V/1700V/1800V
2SC5572
2SC5518/2SC5523
5517/2SC5522
2SC5519/2SC5524
2SC5516/2SC
2SC5553 transistor
transistor 3E
TO36
2sc5522
M.P Diode
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