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    2SC5765 TRANSISTOR Search Results

    2SC5765 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC5765 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sC5765 transistor

    Abstract: 2SC5765
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5765 2sC5765 transistor 2SC5765

    2SC5765

    Abstract: 2sC5765 transistor
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5765 2SC5765 2sC5765 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.27 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5765

    2SC5765

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 2SC5765 2SC5765

    Untitled

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5765

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR M EDI U M POWER AM PLI FI ER ST ROBO FLASH ̈ DESCRI PT I ON medium power amplifier applications strobo flash applications ̈ FEAT U RES * Low Saturation Voltage: VCE sat = 0.27 V (max.),


    Original     		PDF 2SC5765 2SC5765L-T9S-K 2SC5765G-T9S-K O-92SP QW-R216-002

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER


    Original     		PDF 2SC5765 O-92SP QW-R216-002

    2sc5765

    Abstract: No abstract text available
    Text: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER


    Original     		PDF 2SC5765 O-92SP QW-R216-002 2sc5765

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH „ DESCRIPTION medium power amplifier applications strobo flash applications „ FEATURES * Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA)


    Original     		PDF 2SC5765 2SC5765L-T9S-K 2SC5765G-T9S-K O-92SP QW-R216-002

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original     		PDF 2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


    Original     		PDF 3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent