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    2SC594 Search Results

    2SC594 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC5945 Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, , / Visit Renesas Electronics Corporation
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    2SC594 Price and Stock

    EVVO Semiconductor 2SC5949

    TRANS GP BJT NPN 200V 15A TO-3PL
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    DigiKey 2SC5949 Tube 195 1
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    Panasonic Electronic Components 2SC594600L

    RF TRANS NPN 20V 0.05A SSSMINI3
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    Panasonic Electronic Components 2SC5946G0L

    RF TRANS NPN 20V 0.05A SSSMINI3
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    DigiKey 2SC5946G0L Reel 10,000
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    2SC5946G0L Cut Tape 1
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    2SC5946G0L Digi-Reel 1
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    Toshiba America Electronic Components 2SC5949-O(Q)

    Trans GP BJT NPN 200V 15A 3-Pin(3+Tab) TO-3PL - Trays (Alt: 2SC5949-O(Q))
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    Avnet Americas 2SC5949-O(Q) Tray 15 Weeks 100
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    Toshiba America Electronic Components 2SC5949

    Bipolar Transistors - BJT
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    Mouser Electronics 2SC5949
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    2SC594 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC594 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC594 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC594 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC594 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC594 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC594 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC594 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC594 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC594 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC594 Unknown Cross Reference Datasheet Scan PDF
    2SC594 Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC594 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5945 Renesas Technology Si NPN Epitaxial High Frequency Medium Power Amplifier Original PDF
    2SC5945 Renesas Technology Si NPN Epitaxial High Frequency Medium Power Amplifier Original PDF
    2SC5945TR-E Renesas Technology Si NPN Epitaxial High Frequency Medium Power Amplifier Original PDF
    2SC5946 Panasonic 2SC5946 Original PDF
    2SC594600L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 50MA SSSMINI-3 Original PDF
    2SC5946G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 20VCEO 50MA SSSMINI-3 Original PDF
    2SC5947 Sanyo Semiconductor High-Voltage High-Speed Switching Transistors Original PDF
    2SC5948 Toshiba Silicon NPN Triple Diffused Type Power Amplifier Applications Original PDF

    2SC594 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5948 Package Name: TO-3P N 1. Thermal tests Test Item Heat resistance (Flow) Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C Immersion time : 10 s (Up to 1.5mm from the Root shall be immersed)


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    2SC5948 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit


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    2SA2121 2SC5949 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0200 Rev.2.00 Jan 27, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.


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    2SC5945 REJ03G0443-0200 PWSN0006JA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SC5949 Maximum Ratings Tc = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage


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    2SA2121 2SC5949 2-21F1A PDF

    2SA2120

    Abstract: 2SC5948 a2120 2SA21
    Text: 2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


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    2SA2120 2SC5948 2SA2120 2SC5948 a2120 2SA21 PDF

    2SC5946

    Abstract: 2SC5946G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 9N • Pin Name 1: Base


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    2002/95/EC) 2SC5946G 2SC5946 2SC5946G PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating


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    2SA2120 2SC5948 PDF

    2sc5949

    Abstract: 2-21F1A 2SA2121
    Text: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications • PC = 220W • Complementary to 2SA2121 Unit: mm Maximum Ratings Tc = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage


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    2SC5949 2SA2121 2-21F1A 2sc5949 2-21F1A 2SA2121 PDF

    2SC5946G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package ■ Features • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment


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    2002/95/EC) 2SC5946G 2SC5946G PDF

    ZO 607 MA

    Abstract: 149-5 zo 607 150-1 2SC5945
    Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0100 Rev.1.00 Oct.28.2004 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.


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    2SC5945 REJ03G0443-0100 WSON0202-6V Unit2607 ZO 607 MA 149-5 zo 607 150-1 2SC5945 PDF

    2SC5948

    Abstract: 2SA2120 A2120
    Text: 2SA2120 東芝トランジスタ シリコンPNP三重拡散形 2SA2120 ○ 電力増幅用 単位: mm • 2SC5948 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目


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    2SA2120 2SC5948 2-16C1A 20070701-JA 2SC5948 2SA2120 A2120 PDF

    2sc5949

    Abstract: 2SA2121 2-21F1A
    Text: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


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    2SC5949 2SA2121 2sc5949 2SA2121 2-21F1A PDF

    2SC5949

    Abstract: 2-21F1A 2SA2121
    Text: 2SC5949 東芝トランジスタ シリコンNPN三重拡散形 2SC5949 ○ 電力増幅用 単位: mm • 2SA2121 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目


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    2SC5949 2SA2121 2-21F1A 20070701-JA 2SC5949 2-21F1A 2SA2121 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 5˚ 1.20±0.05 0.80±0.05 • High transition frequency fT


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    2002/95/EC) 2SC5946 PDF

    2SA2120

    Abstract: 2SC5948 2SA21
    Text: 2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm • Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


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    2SC5948 2SA2120 2SA2120 2SC5948 2SA21 PDF

    2SC5946G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5946G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification/oscillation/mixing • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C


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    2002/95/EC) 2SC5946G 2SC5946G PDF

    2-21F1A

    Abstract: 2SA2121 2SC5949
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating


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    2SA2121 2SC5949 2-21F1A 2SA2121 2SC5949 PDF

    2SA2121

    Abstract: 2SC5949 2-21F1A
    Text: 2SA2121 東芝トランジスタ シリコンPNP三重拡散形 2SA2121 ○ 電力増幅用 単位: mm • 2SC5949 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目


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    2SA2121 2SC5949 2-21F1A 20070701-JA 2SA2121 2SC5949 2-21F1A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5946 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 5˚ 1.20±0.05 0.80±0.05 • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment


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    2SC5946 PDF

    SSSMini3-F1

    Abstract: 2SC5946
    Text: トランジスタ 2SC5946 シリコンNPNエピタキシャルプレーナ形 高周波増幅・発振・混合用 Unit : mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • 特 長 5˚ 0.80±0.05 0.80±0.05 1.20±0.05 ■ 絶対最大定格 Ta = 25°C 定格 単位


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    2SC5946 SJC00316AJD SSSMini3-F1 2SC5946 PDF

    2SA21

    Abstract: No abstract text available
    Text: 2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm • Complementary to 2SC5948 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating


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    2SA2120 2SC5948 2SA21 PDF

    2SC5948

    Abstract: No abstract text available
    Text: 2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm • Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


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    2SC5948 2SA2120 2SC5948 PDF

    2SC108A

    Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
    Text: TO-39 PACKAGE S ER IES TOSHIBA 16 TO-39 { D I S CRETE/OPT0> Application •c T vdb No. NPN High Voltage SW 2SC507 High Frequency Amp. 2SC594 High Voltage SW 2SC506 PNP v CEO hF E PC fX T Y P . v CE(sat) M A X . Ta=2E?C *Tc=2d>C V CE •c •c • b (V) (A)


    OCR Scan
    2SC507 2SC594 2SC506 2SC505 2SC504 2SC503 2SC498 2SC109A 2SC108A 2SC497 2SA503 2SC524 2SB678 2SC512 PDF