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Toshiba America Electronic Components 2SC6026MFV-Y,L3F Bipolar Transistors - BJT TRANSISTOR50V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	2SC6026MFV-Y,L3F		22,591			1 $0.15 10 $0.084 100 $0.038 1000 $0.03 10000 $0.021	Buy Now
TTI	2SC6026MFV-Y,L3F	Reel			8,000	1 - 10 - 100 - 1000 - 10000 $0.0208	Buy Now
Toshiba America Electronic Components 2SC6026MFVGR,L3F Bipolar Transistors - BJT VESM PLN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	2SC6026MFVGR,L3F		17,409			1 $0.16 10 $0.094 100 $0.042 1000 $0.034 10000 $0.024	Buy Now
Toshiba America Electronic Components 2SC6026MFVGR,L3F(B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC6026MFVGR,L3F(B		6,139			1 $0.19 10 $0.19 100 $0.0855 1000 $0.057 10000 $0.057	Buy Now

2SC6026 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC6026	Toshiba	Transistor for Low-Frequency Small-Signal Amplification	Original	PDF
2SC6026CT	Toshiba	Japanese - Transistors	Original	PDF
2SC6026CT	Toshiba	Transistors	Original	PDF
2SC6026CT-GR,L3F	Toshiba America Electronic Components	TRANS NPN 50V 0.1A CST3	Original	PDF
2SC6026CTGRTPL3	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM	Original	PDF
2SC6026CT-Y(TPL3)	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM	Original	PDF
2SC6026-GR	Toshiba	2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC6026MFV	Toshiba	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)	Original	PDF
2SC6026MFV-GR	Toshiba	2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC6026MFVGR,L3F	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50V 0.15A VESM	Original	PDF
2SC6026MFV-GR(TPL3	Toshiba	2SC6026 - Bipolar Transistors 150mA 50V	Original	PDF
2SC6026MFV-Y	Toshiba	2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC6026MFV-Y,L3F	Toshiba America Electronic Components	NPN TRANSISTOR VCEO50V IC0.15A H	Original	PDF
2SC6026MFV-Y(TPL3)	Toshiba	2SC6026 - Bipolar Transistors 150mA 50V	Original	PDF

2SC6026-Y	Toshiba	2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC6026-Y(TPL3)	Toshiba	2SC6026 - Bipolar Transistors 100mA 50V	Original	PDF

2SC6026 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA Semiconductor Company \| Data Sheet Search \| Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top \| Refine Search \| Results \| Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single	Original	2SC6026CT C6026CT 2SA2154CT 2SC6026CT 16-Apr-09	PDF
Untitled Abstract: No abstract text available Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV	PDF
2SA21 Abstract: 2SA2154 2SC6026 Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026	Original	2SA2154 2SC6026 2SA21 2SA2154 2SC6026	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV	PDF
2SC6026CT Abstract: 2SA2154CT Text: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)	Original	2SC6026CT 2SA2154CT 2SC6026CT 2SA2154CT	PDF
Untitled Abstract: No abstract text available Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF
missile guidance ic Abstract: 2SA2154 2SC6026 Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154	Original	2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026	PDF
2SC6026 Abstract: 2SA2154 Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications • High voltage and high current 0.6±0.05 • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max)	Original	2SA2154 2SC6026 2SC6026 2SA2154	PDF
2SA2154 Abstract: 2SC6026 Text: 2SC6026 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC6026 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大) • 電流増幅率が高い。	Original	2SC6026 2SA2154 2SA2154 2SC6026	PDF
2SA2154MFV Abstract: 2SC6026MFV 2SA21 Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV 2SA21	PDF
Untitled Abstract: No abstract text available Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026CT 2SA2154CT	PDF
transistor marking hy Abstract: 2SA2154MFV 2SC6026MFV PCT 245 Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage	Original	2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF

2SC6026 Abstract: 2SA2154 2SA21 Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications High voltage and high current • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154	Original	2SC6026 2SA2154 2SC6026 2SA2154 2SA21	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。	Original	2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV	PDF
Untitled Abstract: No abstract text available Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV	PDF
2SA2154MFV Abstract: 2SC6026MFV Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV	PDF
Untitled Abstract: No abstract text available Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026	Original	2SA2154 2SC6026	PDF
2SA2154MFV Abstract: 2SA21 2SC6026MFV 21l1A 2sc602 Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity	Original	2SA2154MFV 2SC6026MFV 2SA2154MFV 2SA21 2SC6026MFV 21l1A 2sc602	PDF
Untitled Abstract: No abstract text available Text: Reliability Tests Report Product Name: 2SC6026CT Package Name: CST3 1. Thermal tests Test Item Heat resistance Reflow Temperature cycling - - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s	Original	2SC6026CT	PDF
Untitled Abstract: No abstract text available Text: Reliability Tests Report Product Name: 2SC6026MFV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s	Original	2SC6026MFV	PDF
Untitled Abstract: No abstract text available Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154 : VCEO = 50 V, IC = 100 mA (max)	Original	2SC6026 2SA2154 04esented	PDF
TAH6N201U Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106 Text: C O N T E N T S 東芝半導体情報誌アイ 2005年2月号 2 今月の新製品情報 VOLUME 151 1チップインバータIC .2 2ビット 2電源片方向レベルシフタIC .2 Lead Frame Chip Scale Package.3	Original	TPD4113K/TPD4113AK TPD4113K) 00V/1A TPD4113K 5HZIP23 TAH8N401K TAH6N201U 025mA TAH6N201U TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106	PDF

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Toshiba America Electronic Components 2SC6026MFV-Y,L3F

Toshiba America Electronic Components 2SC6026MFVGR,L3F

Toshiba America Electronic Components 2SC6026MFVGR,L3F(B

2SC6026 Datasheets (16)

2SC6026 Datasheets Context Search

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2SA21

2SA2154MFV

2SC6026CT

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2SA2154MFV

missile guidance ic

2SC6026

2SA2154

2SA2154MFV

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transistor marking hy

2SA2154MFV

2SC6026

2SA2154MFV

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2SA2154MFV

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2SA2154MFV

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TAH6N201U