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    Hirose Electric Co Ltd HR10A-10J-12SC(73)

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    Hirose Electric Co Ltd HR10A-10P-12SC(73)

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    Hirose Electric Co Ltd HR10A-10TR-12SC(73)

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    CoreStaff Co Ltd HR10A-10TR-12SC(73) 16
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    Hirose Electric Co Ltd HR10A-10TPA-12SC(73)

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    Elesa+Ganter GN 55.2-SC-7-3

    Magnet: permanent; samarium, cobalt; 6N; Ø: 7mm; H: 3mm
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    Find more 2SC73 price and stock on Findchips.com

    2SC73 Datasheets (155)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC73 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC73 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC73 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC73 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC73 Unknown Vintage Transistor Datasheets Scan PDF
    2SC73 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC73 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC73 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC73 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC73 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC730 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC730 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC730 Mitsubishi RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC730 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC730 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC730 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC730 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC730 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC730 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC730 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    ...

    2SC73 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC732

    Abstract: transistor 2sC732 NPN 2sc732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC732 100Hz, 2SC732 transistor 2sC732 NPN 2sc732 PDF

    toshiba 2SC732

    Abstract: 2SC732TM
    Text: 2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.) Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)


    Original     		2SC732TM 100Hz) 100Hz, toshiba 2SC732 2SC732TM PDF

    transistor 2sC732

    Abstract: 2SC732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC732 100Hz, transistor 2sC732 2SC732 PDF

    diode bsy28

    Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28


    Original     		BSY17 BSY18 EN744 2N3985 BF153 BSX90 2N4421 diode bsy28 BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28 PDF

    C312 diode

    Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292


    Original     		TN3440 2N3961 2N4012 2N5645 2N5079 MRF5175 2N5215 C3-12 2SC1947 2SC1965 C312 diode 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc PDF

    BF394 MOTOROLA

    Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 2N3845 2N3845A 2N3855A 2S0654 TEC80130 TEC80130 2SC828 BF394 BF3950 2N1278 ~~~~~9 15 20 BF238 BF215 BF215 BF226 BF226 NR4210S NR421FS 2SC733 ~~g~~~ 25 30 BFW29 BFW29 BFW29 2SC367G 2SC504 2SC504 2SC504 2SC509G


    Original     		2N3845 2N3845A 2N3855A 2S0654 TEC80130 2SC828 BF394 BF3950 2N1278 BF394 MOTOROLA 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G PDF

    transistor 2sC732

    Abstract: 2sc732 hFE-200 to-92 npn NPN 2sc732
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC732 100Hz, transistor 2sC732 2sc732 hFE-200 to-92 npn NPN 2sc732 PDF

    2SC732

    Abstract: transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s
    Text: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC732 100Hz, 2SC732 transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s PDF

    BC184BP

    Abstract: na31xj 2SC733GR 2sc733y 2SC733-GR 2sc21200 BC650C 2SC509GT BC650CS *d471a
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 25 30 BC849B PTC121 BC223B 2SC21200 2SC28840 2SC27030 2SC27030 2SC22360 BC184K BC184KB ED1402C TED1702N BC183KA MPS9633 MPS9634 2SC941Y KSC1393 ~~g~~~4 35 40 2SC380TM-Y KSC1675 2SC394GR 2SC733Y ZTX109 2SC941TM-Y


    Original     		NA31XI NA31Y1 2N6112 NA31XY NA31YY BCl15 SWT1042 JE9101 BC184BP na31xj 2SC733GR 2sc733y 2SC733-GR 2sc21200 BC650C 2SC509GT BC650CS *d471a PDF

    p20n60

    Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482


    Original     		BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 p20n60 CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75 PDF

    transitron

    Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


    Original     		2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 transitron rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP PDF

    2SC734

    Abstract: 2SA561 2SA5610 2SC734 Y transistor 2SC734 transistor 2SA561 2SA561-Y 2SC734 R
    Text: v 'j3> P N P x f$+ -> r P C m 2SA561 SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) 0 D riv er S tag e A m p lifie r A p p lic atio n s • ¡ S i t E - e - f ; V ceo = —5 0 V (M in .) • ISfQ'SEE^'iS''' : VCE(sat) = —0.3V(M ax.) • 2SC734 i 3 y /. v 9 V K tz 'O


    OCR Scan     		2SA561 2SC734i 2SC734 150mA 100mA, 2SA561 2SA561â 2SC734 2SA5610 2SC734 Y transistor 2SC734 transistor 2SA561 2SA561-Y 2SC734 R PDF

    2SC732TM

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • Unit in mm High Breakdomn Voltage : V£EO = 50V Excellent hpg Linearity : hpE (IC = 0-l rn^L) 1hpE dC = 2mA) = 0.95 (Typ.)


    OCR Scan     		2SC732TM 2SC732TM) 100Hz) 2SC732TM PDF

    2SC732TM

    Abstract: M5030 S12R
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR T O S H IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE A U D IO AM PLIFIER APPLICATIO NS • • • High Breakdomn Voltage : V q e O = 50V Excellent hpg Linearity : hFE (Ic = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)


    OCR Scan     		2SC732TM 2SC732TM) 100Hz) 7500O M5030 S12R PDF

    2SC730

    Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.


    OCR Scan     		2SC730 2SC730 150MHz TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band PDF

    2SC735

    Abstract: 2sC735 transistor 2SA562 2SA56 2SC735 0 2SA562 TOSHIBA TOSHIBA 2SC735 a-45J CMA120 Produced by Perfect Crystal Device Technology
    Text: ^vnypNPxeyz^uBh^yvzviPCTm 2 s a 562 O o PNP 2SC 735 t ; V c E e a t) = - 0 .2 5 V (M ax .) => y y p / V 9 y Ki t 0 i t o Complementary to 2SC735 Mt'k'SL'fe MAXIMUM RATINGS CHARACTERISTIC X.IV9 (xa = 25 °C) SYMBOL HATING UNIT VCBO - 30 V * i i y 9 IH flS


    OCR Scan     		2sa562 2SC735 2SC735 2SA56 Ta-25Â 2sC735 transistor 2SA562 2SC735 0 2SA562 TOSHIBA TOSHIBA 2SC735 a-45J CMA120 Produced by Perfect Crystal Device Technology PDF

    2SC1216

    Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
    Text: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358


    OCR Scan     		2sd425 2sc1570 2sc732tm 2sc1842 2sc2634 2sc2320l 2sc1740ln 2sc1843 2SC1216 sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2sc1162 PDF

    2SA561

    Abstract: 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9
    Text: 2s a 561 ^ u j y p N P x ^ 5> ^ p m ^ y ^ x s > p c T m SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS o O D riv e r S ta g e A m p lif ie r A p p lic a tio n s •  W - Ë E - r - t ; V c b o = - 50V • « IÎD * Œ x > 5 ^ ; Vc k ( e a t ) = 2SC734 t


    OCR Scan     		2sa561 2SC73tiay/ij 2SC734 S-150 --50flA 2SA561 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9 PDF

    2SC733

    Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
    Text: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes


    OCR Scan     		8SC735 2SC735 2sc733 3SC733-QR a4l01 8SC733-BL 2SC733-0R 270Hz 8S0733-BL 2SC733 transistor 2sc733 GR 733 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733 PDF

    2sc2538

    Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094
    Text: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25*C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K* V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )


    OCR Scan     		150MHz 2SC20S3 2SC1970 2SC730 2SC1947 2SC197Í 2SC2237 2SC1972 2SC2094 2SC1729 2sc2538 hpa b 110 2SC2S39 2SC5125 2sc4624 PDF

    2SC733

    Abstract: ic741 006P Ic-741 C733 SC733
    Text: H 6 2SC733 @ 7 nn m ^ M fê Se 006P Ì& 2 2 |B| ^ t 7 / X >f 7 -f- P /J'S D 6 i~ Jls ? — $ 1 y 3 > V> M 5^2 M2 m s (6 —ocDSÍffi (006P) li, 7 « ck 9 ì:, rf')*& & , tW '-U A T -IS 1 C7)I*]H i;, n 7 )i 5 -^ A f M è ïif 4 . 1 * m > i o i t t t f f c & r o - p i a S ' t ' S o


    OCR Scan     		470Kfi SC733 2SC733 ic741 006P Ic-741 C733 PDF

    2SC730

    Abstract: transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on V H F band mobile radio applications. Dim ensions in mm


    OCR Scan     		2SC730 2SC730 150MHz transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020 PDF

    2SC732TM

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEMICONDUCTOR TO SH IB A TECHNICAL 2SC732TM SILICON NPN EPITAXIAL TYPE PCT PROCESS DATA (2SC732TM) Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS • High Breakdomn Voltage : • Excellent hEE Linearity V q E o = 50V . 5.1 M AX. : hFE (Ie = 0.1mA) / hFE (Ie = 2mA) = 0.95 (Typ.)


    OCR Scan     		2SC732TM 2sc732tm) 100Hz) 2SC732TM PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • High Breakdomn Voltage : V q e O ~ 50V • Excellent hpE Linearity : hFE dC = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)


    OCR Scan     		2SC732TM 2SC732TM) 100Hz) 2SC732TM PDF