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Abstract: No abstract text available
Text: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D
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2SAR544P
2SAR544D
2SAR544P
SC-62)
OT-89>
2SCR544P
2SCR544D
-50mA)
SC-63)
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Untitled
Abstract: No abstract text available
Text: 2SCR544P / 2SCR544D Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P / 2SAR544D
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2SCR544P
2SCR544D
2SCR544P
SC-62)
OT-89>
2SAR544P
2SAR544D
A/50mA)
SC-63)
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors 80V / 2.5A 2SCR544D Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 1A / 50mA)
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2SCR544D
R1010A
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors 80V / 2.5A 2SCR544D Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 1A / 50mA)
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2SCR544D
R1010A
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Untitled
Abstract: No abstract text available
Text: Midium Power Transistors 80V / 2.5A 2SCR544D Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 1A / 50mA)
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Original
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PDF
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2SCR544D
R1010A
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