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    2SD111 Price and Stock

    Rochester Electronics LLC 2SD1111

    NPN DARLINGTON TRANSISTOR
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    DigiKey 2SD1111 Bulk 683
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    Panasonic Electronic Components 2SD11190RL

    TRANS NPN 25V 3A MINIP3-F1
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    Rochester Electronics LLC 2SD1111-AA

    TRANS NPN DARL 50V 0.7A 3NP
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    DigiKey 2SD1111-AA Bulk 2,219
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    2SD1111-AA Bulk 2,219
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    JST Manufacturing RF-H142SD-1110(LF)(SN)

    JST RF HEADER (SIDE GOLD-PLATED)
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    Mouser Electronics RF-H142SD-1110(LF)(SN)
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    onsemi 2SD1111-AA

    2SD1111-AA
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    Verical 2SD1111-AA 96,000 2,715
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    Rochester Electronics 2SD1111-AA 28,500 1
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    2SD111 Datasheets (142)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD111 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD111 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD111 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD111 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD111 Unknown Cross Reference Datasheet Scan PDF
    2SD111 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD111 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD111 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD111 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD111 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD111 Toshiba Japanese Transistor Data Book Scan PDF
    2SD1110 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1110 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD1110 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1110 Unknown Cross Reference Datasheet Scan PDF
    2SD1110 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1110 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1110 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1110 Unknown PNP/NPN Silicon Triple Diffused Transistor Scan PDF
    2SD1110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2SD111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vebo

    Abstract: 2SD1119
    Text: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SD1119 vebo 2SD1119

    marking TQ

    Abstract: 2SD1119 marking 3A sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low


    Original     		PDF OT-89 2SD1119 OT-89 500mA 200MHz marking TQ 2SD1119 marking 3A sot-89

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SD1113 K Silicon NPN Triple Diffused Application Igniter Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current


    Original     		PDF 2SD1113 Hitachi DSA00279

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low


    Original     		PDF OT-89-3L 2SD1119 OT-89-3L 500mA 200MHz

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD1119

    2SD1119

    Abstract: No abstract text available
    Text: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD1119 2SD1119

    2SD1119

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SD1119 2SD1119

    Untitled

    Abstract: No abstract text available
    Text: 2SD1117-09 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SD1117-09 Freq15M

    2SD1118

    Abstract: 5A Solid State RELAY IC
    Text: 2SD1118 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings Features TO-220AB High speed switching High D.C. current gain Low saturation voltage High reliability Applications Switching regulators DC-DC converter 1 : Base


    Original     		PDF 2SD1118 O-220AB 2SD1118 5A Solid State RELAY IC

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SD1119

    2SD1119

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SD1119 2SD1119

    2SD1111

    Abstract: 2SD1111 Datasheet
    Text: Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2003B [2SD1111] Features 5.0 4.0


    Original     		PDF EN751C 2SD1111 2003B 2SD1111] SC-43 2SD1111 2SD1111 Datasheet

    2Sb849

    Abstract: 2SD1110
    Text: SavantIC Semiconductor Product Specification 2SB849 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1110 ·Wide area of safe operation · APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN


    Original     		PDF 2SB849 2SD1110 -120V; -20mA 2Sb849 2SD1110

    2SB849A

    Abstract: 2SD1110A
    Text: Inchange Semiconductor Product Specification 2SB849A Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1110A ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING


    Original     		PDF 2SB849A 2SD1110A -120V; -20mA 2SB849A 2SD1110A

    2SD1113

    Abstract: No abstract text available
    Text: 2SD1113 K Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V


    Original     		PDF 2SD1113 O-220AB

    2SD1110

    Abstract: 2SB849
    Text: SavantIC Semiconductor Product Specification 2SD1110 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN


    Original     		PDF 2SD1110 2SB849 2SD1110 2SB849

    2sd111

    Abstract: ic 2 bo 565 2SD111-M 100V7
    Text: 2SD111 NPN POWER TRANSISTOR General Purpose Amplifier and Switching Applications - A -j"*— B — "j J i i i- ~ r - 1— 5 i 2 i t LU EE < D— F - H CO z o w 2 UJ DIM MIN A B C D E F G H J - K L M - 6,35 0,96 29,90 10,69 5,20


    OCR Scan     		PDF 2SD111 2sd111 ic 2 bo 565 2SD111-M 100V7

    2SC2801

    Abstract: 2SD947 2SD549 2SD685 2SD728 2SD1878 2SD869 TOSHIBA 2SC1645 2sd1111 2SD727
    Text: - 226 - m « Type No. * * *t € Manuf. m h SANYO 2SD 891 / fé T 2SD1111 2SD 892 fé T 2SD1U1 2SD 893 fé 2SD1153 T M. TOSHIBA B S NEC 31 HITACHI œ f I FUJITSU fé T MATSUSHITA 2SD892 H ft 2SD549 h ft 2SD716 2SD727 2SD 896 ^ H ft 2SD718 2SD728 2SD 897 S


    OCR Scan     		PDF 2SD891 2SD892 2SD1111 2SD1153 2SC1645 2SC1645 2SD985 2SD549 2SD716 2SC2801 2SD947 2SD685 2SD728 2SD1878 2SD869 TOSHIBA 2SD727

    2SC2802

    Abstract: 2SC3626 2SC3870 2SD2185 2SC4977 2SC3124 2sc3265 2sc3571 2SC4161 2SC4335
    Text: - 204 - m € Type No. it € Manuf. 2SC 4975 fô T 2SC 4976 = 2SC 4977 ^ x±w* 2SC 4981 S r c 2SC 4983 h n 2SC 4984 h n h a n SANYO 2SC4269 T O SHIBA m NEC 2SC3124 ÍL HITACHI x ± FUJITSU a fö T MA T S U S H I T A 2SC2736 2SD1112 2SC4203 2SC2802 2SC4161


    OCR Scan     		PDF 2SC4269 2SC3124 2SC2736 2SC4203 2SC2802 2SD1112 2SC4161 2SC3626 2SC3571 2SC3870 2SC2802 2SC3870 2SD2185 2SC4977 2SC3124 2sc3265 2sc3571 2SC4335

    Untitled

    Abstract: No abstract text available
    Text: 2SD1114 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage


    OCR Scan     		PDF 2SD1114 -220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SD1115 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 4.5 k£2 (Typ) 250 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings


    OCR Scan     		PDF 2SD1115 -220A D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SD1113 K Silicon NPN Triple Diffused HITACHI Application Igniter Outline T O -2 2 0 A B 2 II J I 1 1 B a se 2 C o lle c to r j 2 , 3 (F la n g e ) E m itte r -M -Î K t I t ^ . r x 1 1 _j i—wv—A—vv\—+-1 6 ki3 4 5 0 Í1 (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)


    OCR Scan     		PDF 2SD1113

    Untitled

    Abstract: No abstract text available
    Text: 2SD1115 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage


    OCR Scan     		PDF 2SD1115 -220AB

    2SD1111

    Abstract: BA 7511
    Text: Ordering number: EN 751C N o tó le _ 2SD1111 N P N Epitaxial Planar Silicon Darlington Transistor SANYO Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . High DC current gain 5000 or greater .


    OCR Scan     		PDF 2SD1111 2SD1111 BA 7511