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    2SD1160 Search Results

    2SD1160 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1160 Toshiba TRANS DIGITAL BJT NPN 20V 2MA 3(2-7B1A) Original PDF
    2SD1160 Unknown Scan PDF
    2SD1160 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1160 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1160 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1160 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1160 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1160 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1160 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1160 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1160 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SD1160 Toshiba Silicon NPN transistor for switching applications. Suitable for motor drive applications Scan PDF
    2SD1160-O Unknown Farbcode: orange Scan PDF
    2SD1160-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1160-O Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SD1160-Y Unknown Farbcode: gelb Scan PDF
    2SD1160-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1160-Y Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF

    2SD1160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1160

    Abstract: 2SD1160 2SD1160-O 2SD1160-Y
    Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode


    Original     		PDF 2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y

    Untitled

    Abstract: No abstract text available
    Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode


    Original     		PDF 2SD1160

    D1160

    Abstract: 2SD1160 2SD1160-O 2SD1160-Y
    Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain · Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) · Built-in free wheel diode


    Original     		PDF 2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y

    1M300

    Abstract: D1160
    Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode


    Original     		PDF 2SD1160 1M300 D1160

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    D1160

    Abstract: 2SD1160 2SD1160-O 2SD1160-Y
    Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode


    Original     		PDF 2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y

    D1160

    Abstract: 2SD1160 2SD1160-O 2SD1160-Y
    Text: 2SD1160 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1160 Switching Applications Suitable for Motor Drive Applications Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode


    Original     		PDF 2SD1160 D1160 2SD1160 2SD1160-O 2SD1160-Y

    2SD1188

    Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150


    Original     		PDF 2SD1101 2SB831 2SD1102 2SD1103 2SD1104 2SD1105 2SD1106 2SD1107 2SD1108 2SD1109 2SD1188 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    Power MOLD

    Abstract: 2SC3303 TE16L 2SC380 2sc3233 STA1100 2sc3072
    Text: contents www search print index quit Small Signal Devices ➔ ➔ • Surface Mount Products D-PACK POWER MOLD 23.1 23.2 23.3 Small Signal Devices TO S H I B A contents www search print index quit Small Signal Devices ➔ ➔ ■ Surface Mount Products D-PACK (POWER MOLD)


    Original     		PDF 2SC3075 2SC3405 2SD1220 2SC2983 2SD1160 2SC3233 2SD1221 2SC3805 2SC4203 2SC3076 Power MOLD 2SC3303 TE16L 2SC380 STA1100 2sc3072

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD1160 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 160 SWITCHING APPLICATIONS U nit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS 6.8MAX. (a ) 5.2 ±0.2 o 0.6MAX. i^ H • High DC Current Gain • Low Saturation Voltage : 0.6 V MAX. @


    OCR Scan     		PDF 2SD1160

    Untitled

    Abstract: No abstract text available
    Text: 2SD1160 TOSHIBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. @ Built-in Free Wheel Diode


    OCR Scan     		PDF 2SD1160 2SD1160 2SD1160-0 2SD1160-Y

    toshiba diode 2A

    Abstract: No abstract text available
    Text: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD116Q SWITCHING APPLICATIONS. Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS. • High DC Current Gain • Low Saturation Voltage : 0.6V MAX. @ • Built-in Free Wheel Diode MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD1160 2SD116Q toshiba diode 2A

    2SD1160

    Abstract: 2SD1160-Y
    Text: 2SD1160 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 160 Unit in mm SWITCHING APPLICATIONS SUITABLE FOR MOTOR DRIVE APPLICATIONS • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. (a Built-in Free Wheel Diode


    OCR Scan     		PDF 2SD1160 2SD1160 2SD1160-0 2SD1160-Y i11111

    PA100

    Abstract: 2SD1147 2SD1176 2sd1159 2SB863 2sd1148 2SD1135 2SD1136 2SD1137 2SD1138
    Text: - 236 - Ta=25'C, *EPiäTc=25T» m 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1149 2SD1153 2SD115T 2SD1158 2SD1159 2SD1160 2SD1161 2SD1162 2SD1163 2SD1163A 2SD1164 2SD1164-Z 2SD1169 2SD1176 2SD1176A 2SD1177 2SDI185 2SD1186 2SD1187 2SD11S9


    OCR Scan     		PDF 1CB01 2SD1135 2SD1136 2SD1137 2SD1138 2SD1140 2SD1145 2SD1147 2SD1148 2SD1176A PA100 2SD1147 2SD1176 2sd1159 2SB863

    2SD1160

    Abstract: 2SD1160-Y
    Text: 2SD1160 TO SH IBA 2 S D 1 160 TOSHIBA TRANSISTOR SWITCHING APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm SUITABLE FOR MOTOR DRIVE APPLICATIONS 0 .6M A X . tf • • • High DC Current Gain Low Saturation Voltage : 0.6 V MAX. Built-in Free Wheel Diode


    OCR Scan     		PDF 2SD1160 2SD1160 2SD1160-Y

    2SD1160

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SD1160 Unit in mm SWITCHING APPLICATIONS. SUITABLE FOR MOTOR DRIVE APPLICATIONS. FEATURES: . High DC Current Gain . Low Saturation Voltage : 0.6V MAX. . Built-in Free Wheel Diode CS 68MAX. dd +I a @Ic=2A, lB=40mA ih- MAXIMUM RATINGS Ta=25 C


    OCR Scan     		PDF 2SD1160 68MAX. 2SD1160-0 2SD1160-Y 2SD1160

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD1810

    Abstract: 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145 2SC4210
    Text: 250 - £ m tt T y p e No. £ Manuf. = ft SANYO M SE TOSHIBA B H □— A 2SC4210 2SD596 □— A 2SC4209 2SD780A 2SD 1782K □— A 2SC42Q9 2SD 1783 □— A y 2 S D 1784 X 2SC3145 2SD686 2SD1627 2SD1784 2 S D 1785 X 2SD n _Jj, OC1M 1 C 0 a —A 2 SC 4 4 8 5


    OCR Scan     		PDF 2SC4210 2SD596 2SC2618 2SD1328 2SC4209 2SD780A 1782K 2SC4209 2SD602A 2SD1810 2SD1111 2SD1694 2SC1280A 2SC3565 2SC4350 2SC4574 2SC2618 2SC3145