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    2SD1249A Search Results

    2SD1249A Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1249A Kexin Silicon NPN Triple Diffusion Planar Type Original PDF
    2SD1249A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1249A Panasonic NPN Transistor Original PDF
    2SD1249A TY Semiconductor Silicon NPN Triple Diffusion Planar Type - TO-252 Original PDF
    2SD1249A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1249A Unknown Cross Reference Datasheet Scan PDF
    2SD1249A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1249A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1249A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1249A Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1249AP Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1249AQ Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1249AR Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1249A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1249

    Abstract: 2SD1249A
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1249, 2SD1249A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1


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    PDF 2SD1249, 2SD1249A O-252 2SD1249 2SD1249 2SD1249A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 V VCEO Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SD1249, 2SD1249A 2SD1249 2SD1249A

    W3100

    Abstract: 2SD1249 2SD1249A
    Text: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification • Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to


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    PDF 2SD1249, 2SD1249A 2SD1249 10MHz W3100 2SD1249 2SD1249A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 V VCEO Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SD1249, 2SD1249A 2SD1249 2SD1249A

    2SD1249

    Abstract: 2SD1249A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 2SD1249 (Emitter open) 2SD1249A Rating Unit VCBO 350 V 400 250 V Collector-emitter voltage 2SD1249


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    PDF 2002/95/EC) 2SD1249, 2SD1249A 2SD1249 2SD1249 2SD1249A

    2SD1249

    Abstract: 2SD1249A
    Text: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 Collector-base voltage Emitter open Rating Unit VCBO 350 V 2SD1249 2SD1249A 400 VCEO 250 V Emitter-base voltage (Collector open) VEBO 5 V Collector current


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    PDF 2SD1249, 2SD1249A 2SD1249 2SD1249 2SD1249A

    2SD1249

    Abstract: 2SD1249A
    Text: Power Transistors 2SD1249, 2SD1249A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification • Absolute Maximum Ratings 1.5±0.1 1.0±0.1 1.5max. 1.1max. 2.0 High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to


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    PDF 2SD1249, 2SD1249A 2SD1249 2SD1249 2SD1249A

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SD1249, 2SD1249A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High collector-base voltage Emitter open VCBO


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    PDF 2SD1249, 2SD1249A O-252 2SD1249 current200

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2N5483

    Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .


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    PDF BD171 KT821V1 DTL3512 BD172 MJE341 2SA843 MJE341K BD173 2N5483 diode 2U 66 MJE30 MJE2360T

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


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    PDF 2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201

    2SD1249

    Abstract: 2SD1249A
    Text: Power Transistors 2SD1249, 2SD1249A 2SD1249, 2SD1249A Silicon NPN Triple-Diffused Planar Type Package Dim ensions AF Power A m plifier U n it I • Features • High c o lle c to r-b a s e v o ltag e 3.7max. 8.7 max. V cbo • “N T y p e ” p ack ag e co n fig u ratio n w ith a cooling fin fo r d ire c t so ld e rin g


    OCR Scan
    PDF 2SD1249, 2SD1249A 2SD1249 LS32flS2 2SD1249A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1249, 2SD1249A 2SD1249, 2SD1249A Silicon NPN Triple-Diffused Planar Type Package D im ensions AF Power A m plifier U nit I mm • Features 3.7 max. 1.7 max. • H ig h c o lle c to r - b a s e v o lta g e V c b u h—* 1.1 max. 6.5 m ax.


    OCR Scan
    PDF 2SD1249, 2SD1249A 001bb27

    2SC2720

    Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
    Text: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258


    OCR Scan
    PDF 2SD1692 2SD1276 2SC1953 2SC3620 2SC2682 2SC2258 2SC3271F 2SC2688 2SC1501 2SC2720 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD1250A

    Abstract: IC vertical panasonic 2SD1245 2SD1249 2SD1249A 2SD1250 T0220AB
    Text: PANASONIC INDL/ELEK-CSEUI} 72C D | tl ' i a a A S M DDDISSD 7 1 2SD1245 2SD1245 U > h " y / S \ N P N Triple Diffused Planar Darlington v U =i > N P N H i Unit \ mm J= $1:;f)ig'llS ffl/''A F Pow er Amplifier • it • 10.5 ± 0.5 9.8max. etq 7.6min. Oh


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    PDF 2SD1245 2SDT245 2SD1250A IC vertical panasonic 2SD1245 2SD1249 2SD1249A 2SD1250 T0220AB

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398