Contextual Info: SMD Type Product specification 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

2SB965

Abstract: 2SD1288
Contextual Info: SavantIC Semiconductor Product Specification 2SB965 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SB966

Abstract: 2SD1289
Contextual Info: SavantIC Semiconductor Product Specification 2SB966 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1289 · APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SD1280

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 1 2 0.5±0.08 3 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SB0956

Abstract: 2SD1280
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Rating Unit VCBO −20 V Collector-emitter voltage (Base open)

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

MEL12

Abstract: tc1669 MM 1669A 2sd1286 2SB963-Z 2SD1286-Z TC-1669A
Contextual Info: DATA SHEET ,r NEC SILICON TRANSISTOR 2SD1286-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2 S D 1 2 8 6 -Z is d esig n e d fo r S w itc h in g , es p e cially in H ybrid in m illim eters In te g ra te C ircuits. 6.5±0.2 ^ FEATURES

2SB0956

Abstract: 2SB956 2SD1280
Contextual Info: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

TC1627

Abstract: 1627A 2SB963-Z 2SD1286-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB963-Z PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION PACKAGE DRAWING (Unit: mm) The 2SB963-Z is designed for switching, especially in Hybrid 5.5 ±0.2 • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z

2SD1280

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25

2SB0956

Abstract: 2SD1280
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 0.4±0.08 1.5±0.1 Unit −20 V Collector-emitter voltage (Base open)

2SD1280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: 2SD1286 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.30k

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1280G • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C

2SD1280

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD1280 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 ● 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 2.5±0.1 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

Contextual Info: Transistor 2SB0956 2SB956 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1280 Unit: mm 4.5±0.1 1.6±0.2 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SD1280

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1280G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification • Package • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1280 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 4.5±0.1 1.6±0.2 2.5±0.1 0.4±0.04 di p Pl lan nclu ea e se pla m d m des

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0956 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1280 4.5±0.1 1.6±0.2 1 1.5±0.1 Parameter Symbol Rating Unit VCBO −20

2SD1280

Contextual Info: Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the