2SD1314 Search Results

2SD1314 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1314	Toshiba	TRANS DARLINGTON NPN 450V 15A 3(21F1A)	Original	PDF
2SD1314	Toshiba	NPN Transistor	Original	PDF
2SD1314	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD1314	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1314	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1314	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1314	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD1314	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SD1314	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD1314	Unknown		Scan	PDF
2SD1314	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD1314	Toshiba	Silicon NPN transistor for high power switching applications and motor control applications	Scan	PDF

2SD1314 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2sd1314 Abstract: 2-21F1A 2Sd13 Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314 2sd1314 2-21F1A 2Sd13	PDF
2Sd13 Abstract: No abstract text available Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314 2-21F1A 2Sd13	PDF
2sd1314 Abstract: 2-21F1A Text: 2SD1314 シリコンNPN三重拡散形ダーリントン接続東芝トランジスタ 2SD1314 通信工業用 ○ 大電力スイッチング用 ○ モータドライブ用単位: mm • 直流電流増幅率が高い。 : hFE = 100 (最小) (IC = 15 A)	Original	2SD1314 2-21F1A 20070701-JA 2sd1314 2-21F1A	PDF
2sd1314 Abstract: 2-21F1A Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314 2sd1314 2-21F1A	PDF
Untitled Abstract: No abstract text available Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314	PDF
2-21F1A Abstract: 2SD1314 Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) · Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314 2-21F1A 2SD1314	PDF
2sd1314 Abstract: 2-21F1A Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314 2sd1314 2-21F1A	PDF
2sd1314 Abstract: 2-21F1A Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)	Original	2SD1314 2sd1314 2-21F1A	PDF
2SD1388 Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371 Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25	Original	2SD1301 2SD1302 2SD1303 2SD1304 2SD1305 2SD1306 2SD1307 2SD1308 2SD1309 2SD1310 2SD1388 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371	PDF
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF

Untitled Abstract: No abstract text available Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)	OCR Scan	2SD1314 VCC-300V	PDF
2sd1314 Abstract: 2-21F1A Text: TO SH IBA 2SD1314 2 S D 1 314 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • High DC Current Gain : hjPE = 100 (Min.) Low Saturation Voltage : V qe (sat) = ^V (Max.)	OCR Scan	2SD1314 2sd1314 2-21F1A	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD1314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON K mm nmmr n m v u • HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. <¿3.3 + 0.2 2Q.5MAX. • High DC Current Gain : hpE = 100 (Min.) • Low Saturation Voltage : V(}E(sat)“ 2V (Max.)	OCR Scan	2SD1314	PDF
2SD1314 Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1314 INDUSTRIAL APPLICATIONS Unit HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. in m m 0 3 .3 ± q g FEATURES: . H i g h DC C u r r e n t G a i n : h F E = 1 0 0 ( M i n .) (Ic=15A) . Low Saturation Voltage	OCR Scan	2SD1314 2SD1314	PDF
2sd1314 Abstract: 2-21F1A Text: TO SHIBA 2SD1314 2 SD1 31 4 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. (¿3.3 ±0.2 20.5MAX. • • • High DC Current Gain : hpE = 100 (Min.) Low Saturation Voltage : V qe (sat) = 2V (Max.)	OCR Scan	2SD1314 2sd1314 2-21F1A	PDF
2sd1314 Abstract: 2-21F1A ic 1105 Text: TOSHIBA 2SD1314 2 S D 1 314 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 20.5MAX. - High DC Current Gain : hjPE = 100 (Min.) Low Saturation Voltage : V qe (sat) = ^V (Max.)	OCR Scan	2SD1314 2sd1314 2-21F1A ic 1105	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)	OCR Scan	O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346	PDF
2SC4542 Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555 Text: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313	OCR Scan	2SC3789 2SC2551 2SC3209 2SC1573A 2SC4106 2SC2553 2SC2518 2SC4107 2SC3626 2SC4423 2SC4542 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF

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2SD1314 Search Results

2SD1314 Datasheets (12)

2SD1314 Datasheets Context Search

2sd1314

2Sd13

2sd1314

2sd1314

Untitled

2-21F1A

2sd1314

2sd1314

2SD1388

STK411-230E

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

Untitled

2sd1314

Untitled

2SD1314

2sd1314

2sd1314

Transistor 2SA 2SB 2SC 2SD

2SC4542

15J102

2sC5200, 2SA1943, 2sc5198