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    2SD1416 Search Results

    2SD1416 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1416 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1416 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1416 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1416 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1416 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1416 Unknown Cross Reference Datasheet Scan PDF
    2SD1416 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1416 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1416 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD1416 Toshiba 7A, 30W, V(ceo): 80V, NPN darlington transistor Scan PDF

    2SD1416 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD1416

    Abstract: 2SB1021
    Text: Inchange Semiconductor Product Specification 2SB1021 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1416 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications


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    2SB1021 O-220Fa 2SD1416 O-220Fa) VCC-45V 2SD1416 2SB1021 PDF

    2SD1416

    Abstract: 2SB1021
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •High DC C urrent Gain: hFE= 2000 Min. @IC= -3A ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1416


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    2SD1416 -14mA 2SD1416 2SB1021 PDF

    2SD1416

    Abstract: 2SB1021
    Text: JMnic Product Specification 2SB1021 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・Complement to type 2SD1416 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications


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    2SB1021 O-220Fa 2SD1416 O-220Fa) -14mA VCC-45V 2SD1416 2SB1021 PDF

    2SD1416

    Abstract: 2SB1021
    Text: SavantIC Semiconductor Product Specification 2SB1021 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1416 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications


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    2SB1021 O-220Fa 2SD1416 O-220Fa) 2SD1416 2SB1021 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80 PDF

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


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    02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A PDF

    2sd1416

    Abstract: No abstract text available
    Text: 2SD1416 SILICON NPN TRIPLE DIFFUSE TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 1C13MAX. 0Z.2±(X2 FEATURES: . High DC Current Gain : hpE=2000(Min.) (at V c e = 3V, Ic=3A)


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    2SD1416 2SB1021. 1C13MAX. 2sd1416 PDF

    2SD1416

    Abstract: 2sB102
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1416 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. laSMAX. FEATURES: . High DC Current Gain : hpE=2000(Min.)(at VcE=3V, Ic=3A) . Low Saturation Voltage : VcE(sat)=1.5V(Max.)(at Ic=3A)


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    2SD1416 2SB1021. 2SD1416 2sB102 PDF

    2SB1021

    Abstract: 2SD1416
    Text: y U =1 > P N P = m i A Ë Ï M $ ' - V > h 2SB1021 (2 S B 1 0 2 1 <a X m O M > 7 - K 7 -f 7 , Ì l '7 - í 77 : hpE = 2000 (ft/J') (Vq j ;= —3V, I q = —3A) . : V cE (sat) = - l - 5 V ( Â * ) ( I c = - 3 A ) . 2SD1416 b => > 7" ’) J > ? ') iz 4- >9 Í "To


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    2SB1021 2SB1021) 2SD1416 2-10L1A i50aN -50mA, -14mA 20//S 2SB1021 PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    2SC3560

    Abstract: 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562
    Text: T0220 CÜ> Application * MAX. * t r Type No. NPN SWITCHING REG. PNP •c A 2SC3309 2SC3560 2 2SC3561 2SD1571 3 2SC3559 V CE (sat) M AX, h FE PC Tc=25°C (W) VCE (V) >c (A) (V) 'c (A) 'B (A) Cob TYP. (MHz) VCE (V) 1c (A) f=1MHz <pF) VCB (V) , • SWTime TYP.


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    O-220 2SC3309 20MIN. 2SC3560 10MIN. 2SC3561 2SD1571 2SC3559 2SC3560 2SC3625 2SB1020 pnp darlington 2SC3309 2SC3310 2SC3497 2SC3559 2SC3561 2SD1571 2SC3562 PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1021 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _ Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. rfl/ Àf 03.Z±O.2 MAXIMUM RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC


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    2SB1021 2SD1416. PDF

    2SD1383K

    Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
    Text: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD13792SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT


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    2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380 2SD1381 2SD1382 2SD1383T0-3PB) 2SD1403 2-10L1A) 2SD1383K 2SD1402 2SD1407 2SD1416 2SD1390 PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


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    2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2SB1021

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1021 INDUSTRIAL APPLICATIONS U nit in mm HIGH PO W ER SW ITCHIN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • • • High DC Current Gain : hpE =2000 (Min.) (at V c e = —3V, I c = -3 A )


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    2SB1021 2SD1416. 2SB1021 PDF

    2SD1407

    Abstract: 2SB977 2SB1017 2SD1347 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974
    Text: - 70 - n Ta=25V.*EPteTc=25V m £ *± £ VcBO Vceo (V) (V) Ic(DC) <A> Pc Pc* (HO m iCBO (max) (ub) VcB (V) m (min) w & (max) 14 V'CE (V) (Ta=25°C) ic/I E (A) [*EP[ätypH3 (max) (V) (V) Ic (A) Ib Ca ) 2SB966 BIS LF PA -120 -120 -8 80 -50 -120 60 320 -5 -1


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    2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB1011 2SD1376K O-126) 2SB1012K 2SD1407 2SB977 2SB1017 2SD1347 PDF