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    2SD163 Search Results

    2SD163 Result Highlights (1)

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    2SD1630-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    Panasonic Electronic Components 2SD16330P

    TRANS NPN DARL 100V 5A TO220F-A1
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    Samtec Inc TW-20-02-S-D-163-130

    Conn Board Stacker HDR 40 POS 2mm Solder ST Thru-Hole - Bulk (Alt: TW-20-02-S-D-163-1)
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    Newark TW-20-02-S-D-163-130 Bulk 1
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    Master Electronics TW-20-02-S-D-163-130
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    Hewlett Packard Co 2SD1632

    Bipolar Junction Transistor, NPN Type, TO-247VAR
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    Quest Components 2SD1632 15
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    Renesas Electronics Corporation 2SD1630-AZ-L

    Bipolar Transistor (BJT)
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    Chip1Stop 2SD1630-AZ-L 10
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    2SD163 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD163 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD163 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD163 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD163 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD163 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD163 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD163 Unknown Cross Reference Datasheet Scan PDF
    2SD163 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD163 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD163 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD163 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD163 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD163 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1630 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1630 NEC Semiconductor Selection Guide Original PDF
    2SD1630 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1630 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1630 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1630 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1630 NEC NPN SILICON DARLINGTON POWER TRANSISTOR Scan PDF

    2SD163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1633

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN DESCRIPTION 1 Base 2


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    PDF 2SD1633 O-220Fa 2SD1633

    2sd1634

    Abstract: NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD1634 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN DESCRIPTION 1 Base 2


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    PDF 2SD1634 O-220Fa 2sd1634 NPN POWER DARLINGTON TRANSISTORS

    2SB1194

    Abstract: 2SD1633
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633


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    PDF -100V 2SD1633 -100V; 2SB1194 2SD1633

    2-7D101A

    Abstract: 2SD1631 D1631
    Text: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    PDF 2SD1631 2-7D101A 2SD1631 D1631

    2-7D101A

    Abstract: 2SD1631 D1631 D1631 transistor npn
    Text: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    PDF 2SD1631 2-7D101A 2SD1631 D1631 D1631 transistor npn

    2SD1638

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1638 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·DARLINGTON APPLICATIONS ·For low frequency and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector;connected to


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    PDF 2SD1638 O-126 2SD1638

    2SD1633

    Abstract: No abstract text available
    Text: Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO


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    PDF 2SD1633 2SD1633

    2SD1633

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


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    PDF 2002/95/EC) 2SD1633 SC-67 O-220F-A1 2SD1633

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open) VCEO 100


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    PDF 2002/95/EC) 2SD1633 SC-67 O-220F-A1

    D1631 transistor npn

    Abstract: D1631 2-7D101A 2SD1631
    Text: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)


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    PDF 2SD1631 D1631 transistor npn D1631 2-7D101A 2SD1631

    2SD1632

    Abstract: ic3a
    Text: SavantIC Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications


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    PDF 2SD1632 500mA 2SD1632 ic3a

    2SD1633

    Abstract: 2SB1194
    Text: Inchange Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications


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    PDF 2SB1194 O-220Fa 2SD1633 O-220Fa) -100V; 2SD1633 2SB1194

    2SD1632

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications


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    PDF 2SD1632 2SD1632

    2SD1633

    Abstract: 2SB1194
    Text: JMnic Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications PINNING PIN


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    PDF 2SB1194 O-220Fa 2SD1633 O-220Fa) -100V; 2SD1633 2SB1194

    2SD1034

    Abstract: 2SD1634 panasonic 2SD
    Text: Power Transistors 2SD 1Ó 34 2SD1634 Silicon PNP Triple-Diffused Planar Darlington Type Package D im ensions Power S w itching U nit ! mm • Features 4 .4m ax. 10.2m ax. • High sp eed sw itching 2.9 m a \ • G ood linearity of DC current gain hFE • “Full P ack” package for simplified m ounting on a heat sink with one


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    PDF 2SD1034 2SD1634 2SD1034 2SD1634 panasonic 2SD

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1Ó32 2SD1632 Silicon NPN Triple-Diffused Junction Mesa Type Package Dim ensions Horizontal D eflection O utput U n it ! mm • Features 15.5m ax. 5.2max. 6.9m in. • D a m p e r d iode built-in 3.2 • H igh b re a k d o w n v o lta g e and high reliability by g lass p assiv atio n


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    PDF 2SD1632 75kHz 32flSE lb777

    2SD1630

    Abstract: No abstract text available
    Text: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching


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    PDF 2SD1630 2sd1630ii, 2SD1630

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO 40E LTD D • TflEÛ'm GGQSTI S b BI RHM / I ransistors 2SD1638 - :-'-7 T 3 3 - 2 9 X ^ v r ^ 7° b — N PN - > ' ; = ! > $


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    PDF 2SD1638

    2sc4137

    Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
    Text: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638


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    PDF 7fi20W O-126, O-126FP O-126 O-126FP JO-126FP 2SB1007 2SB1309 2SB1009 2sc4137 TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A

    2SB1194

    Abstract: 2SD1633
    Text: Power T ransistors 2SB1194 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Switching Complementary Pair with 2SD1633 •Features • • • • Unit • mm ,10.2max._ 5.7max. High speed switching Good linearity of DC current gain


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    PDF 2SB1194 2SD1633 b13205E 2SB1194 2SD1633

    2-7D101A

    Abstract: 2SD1631 IBJT
    Text: TO SH IBA 2SD1631 TOSHIBA TRANSISTOR 2 S D 1 631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS 7.1 MAX POWER AMPLIFIER APPLICATIONS — r -. • 1 1.0 High DC Current Gain : hpE = 4000 (Min.)


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    PDF 2SD1631 2-7D101A 2SD1631 IBJT

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1634 2SD1634 Silicon PNP Triple-Diffused Planar Darlington Type P a c k a g e D im e n s io n s P o w e r Switchin g U nit ! mm • F e a tu re s 4. 4m ax. 10.2 max . • High sp eed sw itching • Good linearity of DC current gain hFE


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    PDF 2SD1634

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1633 2SD1633 Silicon PNP Triple-Diffused Planar Darlington Type P o w e r S w itching • P a c k a g e D im e n s io n s U nit I mm C o m p l e m e n ta r y P a ir with 2 S B 1 1 7 4 4. 4m ax. 10.2n ■ F e a tu r e s 5. 7max. 2 9ma\


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    PDF 2SD1633 D01b77Ã

    2SD1638

    Abstract: No abstract text available
    Text: 2SD1638 h -7 > V 7 - $ / T r a n s is to r s Freq. P o w er Amp. Epitaxial Planar N P N Silicon Darlington Transistor 1 Vi V V II-7- • ^ J B ^ S tH /D im e n s io n s U n it: mm K > i ^ T h FE ^ 'i§ ^ o KfaiSco N fr>4 2) 3) a : - x • x * 7 • Features


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    PDF 2SD1638 O-126 2SD1638 1K-10K