D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
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2SD2130
Abstract: D2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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D2130
Abstract: No abstract text available
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
-55HIBA
D2130
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D2130
Abstract: 2SD2130 141TC
Text: 2SD2130 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2130 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE = 2000 最小 (VCE = 2 V, IC = 1 A)
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D2130
Abstract: 2SD2130
Text: 2SD2130 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2130 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE = 2000 最小 (VCE = 2 V, IC = 1 A)
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2SD2130
20070701-JA
D2130
2SD2130
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D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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D2130
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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Untitled
Abstract: No abstract text available
Text: 2SD2130 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2130 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2130
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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Untitled
Abstract: No abstract text available
Text: 2SD2130 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. Unit in mm SWITCHING APPLICATIONS. 8.3MAX. 5.8 POWER AMPLIFIER APPLICATIONS. 0 3.1 ± 0 .1 . High DC Current Gain : hpE=2000(Min.)(VCE=2V, Ic=lA) 3:. Low Saturation Voltage
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2SD2130
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2SD2130
Abstract: No abstract text available
Text: TO SH IBA 2SD2130 2 S D 2 1 30 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • High DC Current Gain . 1_ O A A A ; • • — Z iU U U /TV/T* — \ S \ T _ m T T _ 1 A \
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2SD2130
2SD2130
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2130 M I C R O M O T O R D RIVE, H A M M E R DRIVE A P P L I C A T I O N S . Unit in mm SWITCHING APPLICATIONS. 8.3MAX. POWER AMPLIFIER APPLICATIONS. . High DC Current Gain 0 3.1 ± 0 . 1 : h p E = 2 0 0 0 M i n . (V^£=2V,
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2SD2130
2S02130
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toshiba tc55
Abstract: 2SD2130
Text: 2SD2130 TOSHIBA 2 S D 2 1 30 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. ¿3.1 ±0.1 5.8 PO W ER AM PLIFIER APPLICATIONS. Ï• High DC Current Gain : hFE = 2000 (Min. (Vce = 2V, Ic = 1A)
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2SD2130
toshiba tc55
2SD2130
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SD2130 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S D 2 1 30 Unit in mm MICRO M O TO R DRIVE, H A M M E R DRIVE APPLICATIONS. SW ITCHING APPLICATIONS. <¿3.1 ± 0 . 5 .8 POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hFE = 2000 Min.) (VCE = 2V, Ic = lA)
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2SD2130
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2SD2130
Abstract: No abstract text available
Text: TO SH IBA 2SD2130 2 S D 2 1 30 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. • High DC Current Gain . 1_ O A A A ; • • — Z iU U U /TV/T* — \
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2SD2130
2SD2130
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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f 4558
Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
Text: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459
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2SC3075
2SC3748
2SD1408
2SD1270
2SC4596
2SC3747
2SD1411
2SD1271
2SC3709
f 4558
4558
fa 4558
2SC4588
4558, 4556
2SD2076
4558 nec
2SC4420
NEC 4559
2SC3425
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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S1854
Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686
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2SA473
2SB553
2SA656A
2SB554
2SA657A
2SB595
2SA658A
2SB596
2SA739
2SB673
S1854
s1854 a
mp4002
MP3009
2SC3303
2SC520A
2SC519A
MP4004
S2055
mp4001
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