2SB1429
Abstract: 2SD2155
Text: Inchange Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage
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2SB1429
2SD2155
2SB1429
2SD2155
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2SD2155
Abstract: 2SB1429
Text: SavantIC Semiconductor Product Specification 2SD2155 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1429 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage
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2SD2155
2SB1429
2SD2155
2SB1429
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2SB1429
Abstract: 2SD2155
Text: JMnic Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SD2155 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage PINNING
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2SB1429
2SD2155
-180V;
2SB1429
2SD2155
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2SB1429
Abstract: 2SD2155 100w audio amplifier
Text: SavantIC Semiconductor Product Specification 2SB1429 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2155 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage
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2SB1429
2SD2155
-180V;
2SB1429
2SD2155
100w audio amplifier
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C)
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2SB1429
2SD2155
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2SB1429
Abstract: 2SD2155
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1429 DESCRIPTION •High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Complement to Type 2SD2155 APPLICATIONS ·Power amplifier applications
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2SB1429
-180V
2SD2155
-50mA
-180V
2SB1429
2SD2155
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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Untitled
Abstract: No abstract text available
Text: 2SD2155 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm PO W ER AM PLIFIER APPLICATIONS ¿ ± 3.3 • • 0.2 Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C
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2SD2155
2SB1429
2-21F1A
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Untitled
Abstract: No abstract text available
Text: i TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE " « n - M 'M l ZSB14Z9 POWER AMPLIFIER APPLICATIONS. Unit in mm 20.5MAX . Complementary to 2SD2155 f m . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25°C
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ZSB14Z9
2SD2155
Ta-25
VCB--180V,
-50mA,
VCB--10V,
2SB1429
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2SB1429
Abstract: No abstract text available
Text: 2SB1429 SILICON PNP TRIPLE DIFFUSED TYPE POWER A MPL I F I E R APPLICATIONS. Unit in m m 20.5MAX . C omplementary to 2SD2155 # 3 .3 ±0.2 . R ecommend for 100W H i g h Fiderity A udio F requency Ampl i f i e r Output Stage. 2.5 3.0 +2.5 1 .0 -0 .2 5 MA XI M U M RATINGS Ta~25°C
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2SB1429
2SD2155
2SB1429
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Untitled
Abstract: No abstract text available
Text: 2SD2155 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 1 55 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. j— MAXIMUM RATINGS Ta = 25°C
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2SD2155
2SB1429
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SB1429 Transistor U n it in m m Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications F e a tu re s • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage
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2SB1429
2SD2155
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power transistor audio amplifier 100w
Abstract: No abstract text available
Text: TOSHIBA 2SD2155 Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications F e a tu re s • Complementary to 2SB1429 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings Ta = 25 C CHARACTERISTIC
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2SD2155
2SB1429
power transistor audio amplifier 100w
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2155 P O WE R A M P L I F I E R AP P L I C A T I O N S . Unit in mm . Complementary to 2SB1429 JZJ~3.3±0.2 20.5MAX . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. 3.0 M A XI MU M RATINGS +0.3
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2SD2155
2SB1429
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2SD2155
Abstract: 2-21F1A 2SB1429
Text: TOSHIBA 2SD2155 2 S D 2 1 55 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5M A X . • • Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C
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2SD2155
2SB1429
2SD2155
2-21F1A
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2SD2155
Abstract: transistor npn 100w amplifier 2-21F1A 2SB1429
Text: T O S H IB A 2SD2155 2 S D 2 1 55 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. 53.3 ±0.2 • Complementary to 2SB1429 • Recommend for 100W High Fidelity Audio Frequency Amplifier 1~Vp| O n f r u it Stacp p
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2SD2155
2SB1429
2-21F1A
2SD2155
transistor npn 100w amplifier
2SB1429
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2SB1429
Abstract: 2SD2155 TOSHIBA AUDIO IC 1015
Text: TOSHIBA Discrete Semiconductors 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C)
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2SB1429
2SD2155
2SB1429
2SD2155
TOSHIBA AUDIO IC 1015
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2SD2155 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in ran . Complementary to 2SB1429 20.5 M A X #3.3 ±0.2 . Recommend for 100W High Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC
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2SD2155
2SB1429
2-21F1A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SB1429 Transistor U n it in m m Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications F e a tu re s • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage
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2SB1429
2SD2155
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2155 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE war m mr • vs sa r Unit in mm POWER AMPLIFIER APPLICATIONS 3.3 + 0.2 2Q.5MAX Complementary to 2SB1429 Recommend for 100W High Fidelity Audio Frequency Amplifier O n fc rm t S fa c rp TT
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2SD2155
2SB1429
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hjr 1
Abstract: transistor qz 2SB1429 2SD2155 100W AUDIO ic AMPLIFIER transistor 7g
Text: TOSHIBA Discrete Semiconductors 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C)
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2SB1429
2SD2155
hjr 1
transistor qz
2SB1429
2SD2155
100W AUDIO ic AMPLIFIER
transistor 7g
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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2sd1878
Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Text: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö
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2SD2298
2SD2299
2SD2300
2SD2301
2SD2302
2SD2303
2SD2304
2SD2305
2SD2306
2SD2307
2sd1878
2sd2339
2SD1876
2SD2333
2SC3887A
2SD1545
2SD2009
2SC3887
T M 2313
2SD1431
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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