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    2SD2211 HFE Search Results

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    2SB1236A

    Abstract: 2SB1275 2SD1857A 2SD1918 2SD2211 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 2SD2211 80MHZ) 2SB1275 2SB1236A. 2SB1236A 2SD1857A 80MHZ T100

    2SD2211

    Abstract: 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 2SD2211 80MHZ) 2SB1275 2SB1236A. 2SB1236A 2SD1857A 80MHZ T100

    2SD2211

    Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 80MHZ) 2SB1275 2SB1236A. 2SD2211 2SD2211 hfe 2SB1236A 2SD1857A 80MHZ T100

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1 0.53±0.1


    Original     		PDF 2SD2211)

    1MA160

    Abstract: 2SD2211 80MHZ 2SD2211 hfe
    Text: Transistors SMD Type Power Transistor 2SD2211 Features High breakdown voltage. BVCEO = 160V Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage


    Original     		PDF 2SD2211 80MHZ) 200msec 30MHz 1MA160 2SD2211 80MHZ 2SD2211 hfe

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Power Transistor 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1


    Original     		PDF 2SD2211)

    2SD2212 REEL

    Abstract: 2SD1898 marking 2sd1664 2SD1834
    Text: 2 W S O T- 8 9 B I P O L A R T R A N S I S T O R S • • • SQP £ each 0.1 0.5 0.1 0.5 0.1 0.5 0.5 0.1 0.20 POA 0.10 0.14 0.12 0.13 0.16 0.18 POA 0.5 0.1 0.5 0.5 0.5 0.13 0.13 0.15 0.18 POA 0.5 0.5 0.16 POA 0.01 POA 0.5 1.0 1.0 1.0 0.13 0.18 POA 0.17 SC-62 SOT-89 DIMENSIONS


    Original     		PDF SC-62 OT-89) 2SC4132 2SC5053 2SD1664 2SD1766 2SD1767 2SD1898 2SD2167 2SD2211 2SD2212 REEL marking 2sd1664 2SD1834

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		PDF RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    2SD2211

    Abstract: 80MHZ 2SB1275 2SD1857A 2SD1918 PW200
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A 2SD2211 80MHZ 2SB1275 2SD1857A PW200

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    d1763a

    Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )


    OCR Scan     		PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 2SD1918/2SD1857A/2SC d1763a d2400a 1763A 2SD1763A D1763 d1857a B 1186a 1569a

    transistor 2SB 367

    Abstract: Power Transistors SIT sit transistor
    Text: 2SD2211/2SD1918F5 b ÿ > ' y X £ /Transistors 2 S D 2 2 1 1 I f c E C 2 5 U l 9 1 O r 5 f ^ 4 r y 7 / ^ l / - ^ N P N b ? > y Z $ Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions Unit : mm 1) i o i i l l i J £ T '^ 5 o


    OCR Scan     		PDF 2SD2211 2SD2211/2SD1918F5 /2SD1918F5 transistor 2SB 367 Power Transistors SIT sit transistor

    Untitled

    Abstract: No abstract text available
    Text: MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *Vcís* , Vcer Part No. (A) Pc (W) Ic Max. (A) MPT (Ta=25'C ) hFE m (Tc=25'c) Vce (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82—390 -3 -1 0 0 - w an ’ 2SA1900 - - -5 0 -1 -2 2* - 82—390


    OCR Scan     		PDF 2SB1132 2SA1900 2SB1188 2SB1189 2SB1260 2SC4132 2SD1664 2SC5053 2SD1766 2SD1767

    2SB1516

    Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
    Text: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -


    OCR Scan     		PDF 2SB1132 2SA1900 2S61184 2SB1188 2SB1182 2SB1189 2SB1260 2S81181 2SB1275 2SB1516 2SA1807 2SA1812 2sc4939 2SD2170

    2SC4074K

    Abstract: TD113ZK FMC5 IMB5 DRE01 fmq1 2SA1073K imb8 IMH10
    Text: Tr HUM T ransistors • Stamping List ! 1M arks are fille d w ith hFE ranks. hFE R anking In d ication Item hn Ranking L 27 - 56 M 39- N P 8 2 - 180 Q R Item h, i Ranking U 560 82 V 5 6 - 120 W X 1800 - 3900 1 2 0 - 270 Y 1 8 0 -3 9 0 A* S 270 - 560 E 390 - 820


    OCR Scan     		PDF 2SC4098 2SC4081 2SA1808 2SC4723 2SC4700 2SD2351 2SC4774 2SC4097 2SA1576 2SA1577 2SC4074K TD113ZK FMC5 IMB5 DRE01 fmq1 2SA1073K imb8 IMH10

    2SK1973

    Abstract: d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307
    Text: Transistor Quick reference I Laadad p P a g e lli Package-Application Vceo V * * y,CES * * *w CER Vn«w Application EM3 UMT 2SC4081LN 40 Low Noise I 50 25 60 Package | Part No. f 2SA1037AKLN(E) SMT / 2SA1774 \2 S C 4 6 1 7 120 2SC4723 /2SA 1576A V2SC3722K


    OCR Scan     		PDF /2SA103GK 2411K 2SB1197K 2SD1781K 2SB1051K 2SD1484K 2SA1774 2SC4723 2SC4081 2SA1037AKLN 2SK1973 d 5072 transistor 2S01766 2S02211 2s01664 2sb1516 2S01781K 2sc4912 2SA103G 2SK2307

    2SC5053 NPN

    Abstract: B-2180
    Text: M* Transistors/Surface I' tr4 » w - Mounting Type • MPT3 • CPT3 Package MPT3 series includes mini molded power transistor models rated at Pc=0.5 to 2 W SC-62 ; CPT F5 series are surface mounting power transistors. Part No. Application PNP 2S02167 - -


    OCR Scan     		PDF SC-62) 2S02167 2SD1664 2SD1766 2SD1767 2SC5053 2SD2318 2SA1759 2SA1812 2SC4505 2SC5053 NPN B-2180

    2sd198

    Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
    Text: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)


    OCR Scan     		PDF 2SB1132 2S81184 2S81182 2S81189 2SB1260 2SB1181 2S81275 2SC4132 2sd198 MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


    OCR Scan     		PDF Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89)

    Untitled

    Abstract: No abstract text available
    Text: RONfTI MPT • CPT F5 • PSD Application MPT CPT FS -3 2 -1 - 2* - 8 2 -3 9 0 POR -3 -1 0 0 - -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - _ 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 8 2 -3 9 0 P Q R -3 -5 0 0 - - -8 0 -0 .7 - 2*


    OCR Scan     		PDF 2SB1132 2SA1900 --200k OT-89)