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    2SD2257 Search Results

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    2SD2257 Price and Stock

    Micro Commercial Components 2SD2257-BP

    TRANS NPN 100V 3A TO220F
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    Toshiba America Electronic Components 2SD2257,Q(J

    TRANS NPN 100V 3A TO220NIS
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    Toshiba America Electronic Components 2SD2257(Q,M)

    TRANS NPN 100V 3A TO220NIS
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    Toshiba America Electronic Components 2SD2257,KEHINQ(J

    TRANS NPN 100V 3A TO220NIS
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    Toshiba America Electronic Components 2SD2257(CANO,A,Q)

    TRANS NPN 100V 3A TO220NIS
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    2SD2257 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2257 Toshiba TRANS DARLINGTON NPN 100V 3A 3(2-10R1A) Original PDF
    2SD2257 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2257 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2257 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2257 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2257 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2257 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2257 Toshiba Silicon NPN transistor for high power switching applications, hammer drive and pulse motor drive applications Scan PDF
    2SD2257 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE Scan PDF
    2SD2257,KEHINQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3 Original PDF
    2SD2257,NIKKIQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3 Original PDF
    2SD2257,Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3 Original PDF
    2SD2257-BP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF
    2SD2257(CANO,A,Q) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3 Original PDF
    2SD2257(CANO,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3 Original PDF
    2SD2257(Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3 Original PDF

    2SD2257 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 D2257 2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		2SB1495 O-220F 2SD2257 O-220F) -100V 2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257


    Original     		2SD2257 -10mA; -100V; 2SB1495 2SD2257 PDF

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2257 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 2 V, IC = 2 A)


    Original     		2SD2257 2SB1495 SC-67 2-10R1A 20070701-JA D2257 2SB1495 2SD2257 PDF

    b1495

    Abstract: 2SB1495 2SD2257
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 b1495 2SB1495 2SD2257 PDF

    B1495

    Abstract: 2SB1495 2SD2257
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 B1495 2SB1495 2SD2257 PDF

    toshiba b1495

    Abstract: No abstract text available
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 2-10R1A toshiba b1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2257 Features • • • • • Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1


    Original     		2SD2257 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257


    Original     		2SB1495 2SD2257 PDF

    Darlington NPN Silicon Diode

    Abstract: 2SB1495 2SD2257
    Text: Inchange Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain ・Low saturation voltage ・Complement to type 2SB1495 ・DARLINGTON APPLICATIONS ・High power switching applications


    Original     		2SD2257 O-220F 2SB1495 O-220F) Darlington NPN Silicon Diode 2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: SavantIC Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications


    Original     		2SD2257 O-220F 2SB1495 O-220F) 2SB1495 2SD2257 PDF

    D2257

    Abstract: 2SB1495 2SD2257
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 D2257 2SB1495 2SD2257 PDF

    d2257

    Abstract: No abstract text available
    Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495


    Original     		2SD2257 2SB1495 SC-67 2-10R1A d2257 PDF

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 1 Q ± 0 -3 • • • High DC Current Gain : hjrj; = 2000 MIN. Low Saturation Voltage : V^ e (sat) = 1.5V (MAX.)


    OCR Scan     		2SD2257 2SB1495 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TO SH IBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • • • High DC Current Gain : hjrE = 2000 MIN. Low Saturation Voltage :


    OCR Scan     		2SD2257 2SB1495 2SB1495 2SD2257 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TO SH IBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r ^ 3 .2 ± 0.2 2.7±Q 2 ro • High DC Current Gain : hjrE = 2000 MIN. • Low Saturation Voltage :


    OCR Scan     		2SD2257 2SB1495 2SB1495 2SD2257 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 2000 Min. (VCE = - 2 V , I c = - 2 A ) Low Saturation Voltage • Complementary to 2SD2257 10±0.3


    OCR Scan     		2SB1495 2SD2257 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS. 1 0 ± 0 .3 HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. • High DC Current Gain : hFE=2000 Min. (at VCE=2V, IC=2A) • Low Saturation Voltage : vCE(sat)=1.5V (MAX.) (at IC-1.5A)


    OCR Scan     		2SD2257 2SB1495 PDF

    2SB1495

    Abstract: 2SD2257
    Text: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -2 A ) Low Saturation Voltage : VCE(sat)=—1-5V (MAX.) (IC= -1.5A ) Complementary to 2SD2257


    OCR Scan     		2SB1495 2SD2257 2SB1495 PDF

    2SD2257

    Abstract: 2SB1495
    Text: 2SD2257 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> • • • High DC Current Gain : hjrE = 2000 MIN. Low Saturation Voltage :


    OCR Scan     		2SD2257 2SB1495 2SD2257 2SB1495 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE i <; n 1 1 s 7 w r • ■ T ’ V « HIGH PO W ER SWITCHING APPLICATIONS Unit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 + 0.3 • High DC Current Gain • Low Saturation Voltage : V çje sat = Í-5V (MAX.)


    OCR Scan     		2SD2257 2SB1495 20jus PDF