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    2SD239 Search Results

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    2SD239 Price and Stock

    ROHM Semiconductor 2SD2391T100Q

    TRANS NPN 60V 2A MPT3
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    DigiKey 2SD2391T100Q Cut Tape 1,503 1
    • 1 $1.16
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    • 100 $1.16
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    2SD2391T100Q Digi-Reel 1,503 1
    • 1 $1.16
    • 10 $0.728
    • 100 $1.16
    • 1000 $0.37084
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    2SD2391T100Q Reel 1,000 1,000
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    Mouser Electronics 2SD2391T100Q
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    Quest Components 2SD2391T100Q 946
    • 1 $1.06
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    Ameya Holding Limited 2SD2391T100Q 100 1
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    Avnet Silica 2SD2391T100Q 10 Weeks 1,000
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    Chip1Stop 2SD2391T100Q 1,400
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    Sanken Electric Co Ltd 2SD2390

    TRANS NPN DARL 150V 10A TO3P
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    DigiKey 2SD2390 Tray 1,279 1
    • 1 $3.89
    • 10 $2.555
    • 100 $1.84963
    • 1000 $1.36254
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    Quest Components 2SD2390 120
    • 1 $8.796
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    • 100 $5.4242
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    Chip1Stop 2SD2390 Bulk 958
    • 1 $2.8
    • 10 $2.35
    • 100 $1.9
    • 1000 $1.65
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    ROHM Semiconductor 2SD2396K

    TRANS NPN 60V 3A TO220FN
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    DigiKey 2SD2396K Bulk 500
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    ComSIT USA 2SD2396K 1,480
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    ROHM Semiconductor 2SD2396J

    3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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    Quest Components 2SD2396J 231
    • 1 $0.717
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    ROHM Semiconductor 2SD2394F

    POWER TRANSISTOR (60 V, 3 A) Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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    ComSIT USA 2SD2394F 3,000
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    2SD239 Datasheets (67)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD239 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD239 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD2390 Allegro MicroSystems Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Original PDF
    2SD2390 Sanken Electric Power Transistor Selection Guide Original PDF
    2SD2390 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2390 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2390 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2390O Sanken Electric TRANS DARLINGTON NPN 150V 10A 3TO-3P Original PDF
    2SD2390P Sanken Electric TRANS DARLINGTON NPN 150V 10A 3TO-3P Original PDF
    2SD2390Y Sanken Electric TRANS DARLINGTON NPN 150V 10A 3TO-3P Original PDF
    2SD2391 Kexin Medium Power Transistor Original PDF
    2SD2391 ROHM Medium Power Transistor Original PDF
    2SD2391 ROHM Medium Power Transistor ( 60V, 2A) Original PDF
    2SD2391 ROHM Medium Power Transistor (-60V, -2A, 60V, 2A) Original PDF
    2SD2391 TY Semiconductor Medium Power Transistor - SOT-89 Original PDF
    2SD2391 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2391 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2391Q ROHM Medium Power Transistor 60V 2A Original PDF
    2SD2391T100Q ROHM Medium Power Transistor (60 V, 2 A) Original PDF
    2SD2391T100Q ROHM TRANS NPN 60V 2A SOT-89 Original PDF

    2SD239 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1565

    Abstract: 2SD2394
    Text: JMnic Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2394 PINNING PIN


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    PDF 2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394

    2SB1565

    Abstract: 2SD2394
    Text: SavantIC Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2394


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    PDF 2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394

    2SD2390

    Abstract: 2SB1560 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2390 DESCRIPTION •With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION


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    PDF 2SD2390 2SB1560 2SD2390 2SB1560 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON

    2SB1568

    Abstract: 2SD2399
    Text: SavantIC Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications


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    PDF 2SB1568 O-220F 2SD2399 O-220F) 10MHz 2SB1568 2SD2399

    2SB1566

    Abstract: 2SD2395
    Text: SavantIC Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2395


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    PDF 2SB1566 O-220F 2SD2395 O-220F) current-p50 2SB1566 2SD2395

    2SB1567

    Abstract: 2SD2398
    Text: SavantIC Semiconductor Product Specification 2SB1567 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION


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    PDF 2SB1567 O-220F 2SD2398 O-220F) -100V 2SB1567 2SD2398

    2SB1655

    Abstract: 2SD2394
    Text: Inchange Semiconductor Product Specification 2SB1655 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide area of safe operation ・Complement to type 2SD2394


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    PDF 2SB1655 O-220F 2SD2394 O-220F) 2SB1655 2SD2394

    2sd2397

    Abstract: 2SD1866 2SD2143 2SD2212 T100 diode zener c05 transistor collector diode protection
    Text: 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 !External dimensions (Units : mm) 2SD2212 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Built-in zener diode between collector and base.


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    PDF 2SD2212 2SD2143 2SD1866 2SD2397 2SD2212 SC-62 2sd2397 T100 diode zener c05 transistor collector diode protection

    2SD2398

    Abstract: 2SB1567
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS


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    PDF -100V 2SD2398 Dissipati2SB1567 -100V; 2SD2398 2SB1567

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2391 Features Low saturation voltage. Collector-emitter voltage =60V. PC=2 W on 40 40 0.7mm ceramic board . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage


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    PDF 2SD2391 100MHz

    2SB1566

    Abstract: 2SD2395
    Text: JMnic Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395 PINNING PIN


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    PDF 2SB1566 O-220F 2SD2395 O-220F) 2SB1566 2SD2395

    Untitled

    Abstract: No abstract text available
    Text: 2SB1561 Datasheet PNP -2.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2.0A MPT3 Base Collector Emitter 2SB1561 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2391 3) Low VCE(sat) VCE(sat)= -0.35V(Max.)


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    PDF 2SB1561 SC-62) OT-89> 2SD2391 -50mA) R1102A

    2SD2398

    Abstract: 2SB1316 2SB1567 2SB1580 2SD1867 2SD1980 2SD2195 T100
    Text: 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor 100V , 2A 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 !External dimensions (Units : mm) 2SD2195 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) Darlington connection for high DC current gain.


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    PDF 2SD2195 2SD1980 2SD1867 2SD2398 2SD2195 2SB1580 2SD2398 2SB1316 2SB1567 T100

    2SD2576

    Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
    Text: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314


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    PDF 2SD2167 2SD2394 2SD2576 92S-358 94L-1098-D348) 2SD2576 D310 2SD2167 D348 transistor D348

    2SD2395

    Abstract: 2SB1566
    Text: SavantIC Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector


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    PDF 2SD2395 O-220F 2SB1566 O-220F) 30MHz 2SD2395 2SB1566

    Untitled

    Abstract: No abstract text available
    Text: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.


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    PDF 2SD2391 /50mA. 2SB1561. R0039A

    2SB1561

    Abstract: 2SD2391 T100 60V2A
    Text: Medium Power Transistor 60V, 2A 2SD2391 Dimensions (Unit : mm) Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.


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    PDF 2SD2391 /50mA. 2SB1561. R0039A 2SB1561 2SD2391 T100 60V2A

    2SD2391

    Abstract: 2SB1561 T100
    Text: 2SD2391 Transistors Medium Power Transistor 60V, 2A 2SD2391 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40x40×0.7mm ceramic board).


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    PDF 2SD2391 /50mA. 2SB1561. 2SD2391 2SB1561 T100

    2SB1560

    Abstract: 2SD2390
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2390 APPLICATIONS


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    PDF 2SD2390 -160V; 2SB1560 2SD2390

    2sD2394

    Abstract: D348 transistor TI2150 marking HRA 2SD2576
    Text: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 1) 2) 3) 4) Built-in zene r diode betw een collector and base. Z ener diode has low voltage dispersion. Strong protection against reverse pow er surges due to low loads. P c * 2 W (On 4 0 X 4 0 X 0 -7 m m ceram ic board)


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    PDF 2SD2167 2SD2394 2SD2576 2SD2167 O-220, 0Dlb713 O-220FN O-220FN O220FP T0-220FP, D348 transistor TI2150 marking HRA 2SD2576

    D2395

    Abstract: No abstract text available
    Text: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.


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    PDF 2SB1566 2SD2395 D2395. O-220FN 0Dlb713 O-220FN O220FP D2395

    2SD2391

    Abstract: No abstract text available
    Text: 2SD2391 h 7 > V 7s $ /Transistors 2SD2391 ï £ ° $ * ' > T J l s y i s - J - m N P N y V 3 > h ? Epitaxial Planar NPN Silicon Transistor Ei3€ ^ i f i lÜ £i/M ed iu m Power Amp. 1ii-îFi^tÆ 0/'Dim ensions Unit : mm 1) V C E O = 6 0 V T * 5 o 2) P c=2W T& 3o


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    PDF 2SD2391 40X40X0 2SB1561 2SD2391

    D2399

    Abstract: transistor 2a p
    Text: 2SB1568 2SD2399 Transistors I Power Transistor —80V, —4A 2SB1568 •F e a tu re s 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=*25"C) D arlington conn ection for a high hpe. Buift-in resistor betw een base and em itter. Built-in dam per dokJe. C om plem ents th e 2S D2399.


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    PDF 2SB1568 2SD2399 D2399. --80V, 2SB1568 Pw--100ms Ta--25 96-S25-D422) D2399 transistor 2a p

    2SD2399

    Abstract: 2SD 438
    Text: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) • • • • 2SD2399 (TO-220FN) damper diode is incorporated built-in resistors between base and


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    PDF 2SD2399 O-220FN O-220FP 2SB1568 O-220FN) 10000E 2SD2399 2SD 438