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    2SD247 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD247 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD247 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD247 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD247 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD247 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD247 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD247 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD247 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD247 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD247 Unknown Cross Reference Datasheet Scan PDF
    2SD2470 ROHM High-gain Amplifier Transistor (32V, 0.3A) Original PDF
    2SD2470 ROHM Original PDF
    2SD2470 Unisonic Technologies STROBO AND DC/DC CONVERTERS Original PDF
    2SD2470 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2470 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2470 ROHM TO-92, SPT Transistors Scan PDF
    2SD2470L-X-T92-K Unisonic Technologies STROBO AND DC/DC CONVERTERS Original PDF
    2SD2470-S-T9S-K Unisonic Technologies STROBO AND DC/DC CONVERTERS Original PDF
    2SD2470TP ROHM TRANS DARLINGTON NPN 10V 5A 3SPT Original PDF
    2SD2470TP ROHM Low Vce (sat) Transistor (Strobes and DC/DC Converters) (10 V, 5 A) Original PDF

    2SD247 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2470

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value


    Original     		PDF O-92S 2SD2470 100MHz 2SD2470

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SD2474 2SB1612 200MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage VCE(sat):0.5V 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-92S 2SD2470 100MHz

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm 45° +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SD2474 2SB1612

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 1.5±0.1 45° * 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo


    Original     		PDF 2SB1612 2SD2474

    TO-92SP

    Abstract: 2SD2470 strobo led TO-92SP-3 QW-R216-003
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible 1 TO-92SP *Pb-free plating product number: 2SD2470L ORDERING INFORMATION


    Original     		PDF 2SD2470 O-92SP 2SD2470L 2SD2470-x-T9S-K 2SD2470L-x-T92-K 2SD2470L-x-T9S-K QW-R216-003 2SD247t TO-92SP 2SD2470 strobo led TO-92SP-3

    2SD2474

    Abstract: 2SB1612
    Text: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SD2474 2SB1612 2SD2474 2SB1612

    2SD2470

    Abstract: TO92S
    Text: 2SD2470 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 123 3. BASE Features — Low saturation voltage VCE(sat):0.5V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage


    Original     		PDF O-92S 2SD2470 O-92S 100MHz 2SD2470 TO92S

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD2479

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS  FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible  ORDERING INFORMATION Ordering Number Package Lead Free


    Original     		PDF 2SD2470 2SD2470G-x-AB3-R OT-89 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B O-92SP 2SD2470L-x-T9S-K 2SD2470G-x-T9S-K

    2F P marking

    Abstract: 2SD2474 at maga 2SB1612
    Text: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SB1612 2SD2474 2F P marking 2SD2474 at maga 2SB1612

    2SB1612

    Abstract: 2SD2474
    Text: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SB1612 2SD2474 2SB1612 2SD2474

    2SD2479

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification M Di ain sc te on na tin nc ue e/ d 10.8±0.2 • Features • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD2479 2SD2479

    2SD2470

    Abstract: 2SD2142K 2SC2062S
    Text: Transistors 2SD2142K / 2SC2062S 2SD2470 94L-570-D25 (SPEC-D230) 316 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


    Original     		PDF 2SD2142K 2SC2062S 2SD2470 94L-570-D25) SPEC-D230) 2SD2470 2SC2062S

    2SD2478

    Abstract: D426 2SB1616 b426 2SB1616 equivalent SPEC-B426
    Text: Transistors 2SB1616 2SD2478 SPEC-B426 (94L-1129-D426) 301


    Original     		PDF 2SB1616 2SD2478 SPEC-B426) 94L-1129-D426) 2SD2478 D426 2SB1616 b426 2SB1616 equivalent SPEC-B426

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2474 Features Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SD2474

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD2470 NPN EPITAXIAL SILICON TRANSISTOR Strobo and DC/DC Converters FEATURES *Low saturation voltage VCE sat = 0.25V(typ) at Ic/IB= 3A/0.1A *Collector current of 5A is possible 1 TO-92SP 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )


    Original     		PDF 2SD2470 O-92SP 100MHz QW-R216-003

    2SD2479

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification M Di ain sc te on na tin nc ue e/ d 10.8±0.2 • Features • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SD2479 2SD2479

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS  FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible 1 TO-92SP  ORDERING INFORMATION Ordering Number Package


    Original     		PDF 2SD2470 O-92SP 2SD2470L-x-T9S-B 2SD2470G-x-T9S-B 2SD2470L-x-T9S-K 2SD2470G-x-T9S-K

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD2470 NPN EPITAXIAL SILICON TRANSISTOR Strobo and DC/DC Converters FEATURES *Low saturation voltage VCE sat = 0.25V(typ) at Ic/IB= 3A/0.1A *Collector current of 5A is possible 1 TO-92SP 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )


    Original     		PDF 2SD2470 O-92SP QW-R216-003

    2SD2470

    Abstract: 2SD2142K 2SC2062 2SC2062S 2SC20
    Text: Transistors 2SD2142K / 2SC2062S 2SD2470 94L-570-D25 (SPEC-D230) 316


    Original     		PDF 2SD2142K 2SC2062S 2SD2470 94L-570-D25) SPEC-D230) 2SD2470 2SC2062 2SC2062S 2SC20

    2SD2470

    Abstract: No abstract text available
    Text: 2SD2142 K / 2SC2062S 2SD2470 Transistors I High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S •F e atu res • A b so lu te maximum rating« (Ta=25°C) 1 ) Darlington connection for a high hre. (Min. 5 0 0 0 at V ce /Ic =3 V /0 .1 A ) 2 ) H igh input im pedance.


    OCR Scan     		PDF 2SD2142 2SC2062S 2SD2470 2SD2142K 2SC2062S Taoe25' -D230) 2SD2470

    c4574

    Abstract: 2SD2478 2SC4574 b426 2SB1616
    Text: 2SB1616 2SD2478 Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 •Absolute maximum ratings (Ta=25"C) •Features 1 ) D arlington connection for a high hre. 2 ) Built-in resistor betw een base and emitter. 3 ) Built-in dam per doide.


    OCR Scan     		PDF 2SB1616 2SD2478 --80V, 2SB1616 C4574. 100ms Ta--25 94L-1129-D426) c4574 2SD2478 2SC4574 b426

    Untitled

    Abstract: No abstract text available
    Text: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S I •F e a tu re s 1 ) Darlington connection for a high Fif e . (Min. 5000 atVcE/lc~3V/0.1A) 2 ) High input impedance. •A b s o lu te maximum ratings (Ta—2 5 t )


    OCR Scan     		PDF 2SD2142K 2SC2062S 2SD2470 2SD2142K 2062S 0Dlb713 O-220FN O-220FN