Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD2908 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 5 A ICM: Collector-base voltage
|
Original
|
OT-89
2SD2908
OT-89
100mA
100MHz
|
PDF
|
2SD2908
Abstract: 2SD2908 EQUIVALENT 2sd290 ahr transistor SOT89 transistor marking 4A
Text: 2SD2908 2SD2908 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 5 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃
|
Original
|
2SD2908
OT-89
100mA
100MHz
2SD2908
2SD2908 EQUIVALENT
2sd290
ahr transistor
SOT89 transistor marking 4A
|
PDF
|
br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
|
Original
|
O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
|
PDF
|