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    2SD55 Search Results

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    2SD55 Price and Stock

    Samtec Inc DW-04-12-S-D-550

    FLEXIBLE BOARD STACKING HEADER W
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    DigiKey DW-04-12-S-D-550 Bulk 1
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    Samtec Inc DW-03-12-S-D-550

    FLEXIBLE BOARD STACKING HEADER W
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    Avnet Americas DW-03-12-S-D-550 Bulk 1
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    Mouser Electronics DW-03-12-S-D-550
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    Powell Electronics DW-03-12-S-D-550 1,255 1
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    Master Electronics DW-03-12-S-D-550
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    Sager DW-03-12-S-D-550 1,901 1
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    Samtec Inc DW-01-12-S-D-550

    FLEXIBLE BOARD STACKING HEADER W
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    DigiKey DW-01-12-S-D-550 Bulk 1
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    JRH Electronics DW-10-12-S-D-550

    STACKING BOARD CONNECTOR, DW SER
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    DigiKey DW-10-12-S-D-550 Bulk 1
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    Samtec Inc DW-10-12-S-D-550

    CONN HDR 20POS 0.1 STACK T/H
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    DigiKey DW-10-12-S-D-550 Bulk 1
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    Avnet Americas DW-10-12-S-D-550 Bulk 1
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    Mouser Electronics DW-10-12-S-D-550
    • 1 $4.04
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    Newark DW-10-12-S-D-550 Bulk 1
    • 1 $5.09
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    Powell Electronics DW-10-12-S-D-550 487 1
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    Master Electronics DW-10-12-S-D-550
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    • 100 $3.43
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    2SD55 Datasheets (124)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD55 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD55 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD55 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD55 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD55 Unknown Cross Reference Datasheet Scan PDF
    2SD55 Unknown Transistor Replacements Scan PDF
    2SD55 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD55 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD55 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD55 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD550 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD550 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD550 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD550 Unknown Cross Reference Datasheet Scan PDF
    2SD550 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD550 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD551 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD551 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD551 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD551 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ...

    2SD55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD555

    Abstract: 2SB600
    Text: Inchange Semiconductor Product Specification 2SD555 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications PINNING see Fig.2 PIN


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    2SD555 2SB600 2SD555 2SB600 PDF

    2SB600

    Abstract: 2SD555
    Text: SavantIC Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING see Fig.2 PIN


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    2SB600 2SD555 -25mA -200V; 2SB600 2SD555 PDF

    2SD553

    Abstract: 2SB553
    Text: SavantIC Semiconductor Product Specification 2SD553 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications


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    2SD553 O-220C 2SB553 2SD553 2SB553 PDF

    2SB552

    Abstract: 2SD552
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB552 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD552 APPLICATIONS ·High power amplifier applications.


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    2SB552 -180V 2SD552 -150V; 2SB552 2SD552 PDF

    412CN

    Abstract: 2SD555 MPSU55 R391K lf412cn 1N4148 1N5250B C200 J502 TIP31C
    Text: CIRCUIT TOPOLOGY COVERED BY U.S. PATENT N° 4229706 Qxx ? R36 MPS U55 - 55 V 4.7k R35 100u CR4 10 R33 200p LF 412CN a C12 7- 420 REV.C C13 62 R23 1 100p 2 C10 470 R20 200p C9 NEC 2SD555 TIP 31C Q14 100p Cxxx Q10 4 .1u C11 100 R30 10meg R32 3010 Q9 0.2


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    412CN 2SD555 10meg 1N5250B TIP31C MPSU55 1N4148 412CN 2SD555 MPSU55 R391K lf412cn 1N4148 1N5250B C200 J502 TIP31C PDF

    2SB600

    Abstract: 2SD555
    Text: JMnic Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1


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    2SB600 2SD555 -25mA -200V; 2SB600 2SD555 PDF

    2SB552

    Abstract: 2SD552
    Text: JMnic Product Specification 2SB552 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING see Fig.2 PIN DESCRIPTION


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    2SB552 2SD552 -25mA -220V; 2SB552 2SD552 PDF

    2SB600

    Abstract: 2SD555
    Text: Inchange Semiconductor Product Specification 2SB600 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SD555 APPLICATIONS ・For use in audio and power amplifier applications PINNING see Fig.2


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    2SB600 2SD555 -200V; 2SB600 2SD555 PDF

    2SB553

    Abstract: 2SD553
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB553 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 APPLICATIONS ·High current switching applications. ·Power amplifier applications.


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    2SB553 2SD553 2SB553 2SD553 PDF

    2SD557

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD557 Features • • With TO-3 package High power audio amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO


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    2SD557 10Adc, 16Adc, 2SD557 PDF

    2SB600

    Abstract: 2SD555 200w audio amplifier ic 200w audio power amplifier 200W POWER TRANSISTORS
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB600 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·High Power Dissipation: PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 APPLICATIONS ·Audio frequency power amplifier applications.


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    2SB600 -200V 2SD555 -200V; -50mA; 2SB600 2SD555 200w audio amplifier ic 200w audio power amplifier 200W POWER TRANSISTORS PDF

    2SB553

    Abstract: 2SD553
    Text: SavantIC Semiconductor Product Specification 2SB553 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD553 ·Low collector saturation voltage APPLICATIONS ·High current switching applications ·Power amplifier applications


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    2SB553 O-220C 2SD553 O-220) 2SB553 2SD553 PDF

    2SD551

    Abstract: 2SB681 2SD551 equivalent
    Text: Inchange Semiconductor Product Specification 2SD551 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SB681 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING see Fig.2 PIN


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    2SD551 2SB681 2SD551 2SB681 2SD551 equivalent PDF

    2SD552

    Abstract: 2SB552
    Text: Product Specification www.jmnic.com 2SD552 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SB552 APPLICATIONS ・Power amplifier applications ・Power switching applications ・DC-DC converters PINNING see Fig.2 PIN DESCRIPTION


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    2SD552 2SB552 2SD552 2SB552 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm PO W ER AM PLIFIER APPLICATIONS 1 0 .3 M A X . r • Low Saturation Voltage : V q e sat ~ 0.4V (Max.) (at I q = 4A)


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    2SD553 2SB553. PDF

    Untitled

    Abstract: No abstract text available
    Text: ~5t TOSHIBA -CDIS CRETE/O PT 01 9097250 TOSHIBA <DIS C R E T E / O P T O 2SD552 DE I^OTTESO 0007755 0 5bC 07725Û y-$5-/3~ _SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit HGIH POWER AMPLIFIER APPLICATIONS. in m m . jzfeaoMAX.


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    2SD552 PDF

    2SD553

    Abstract: Toshiba 2sd553
    Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.


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    2SD553 2SB553. 2-10A1A O-220AB 2SD553 Toshiba 2sd553 PDF

    2SD555

    Abstract: 2SB600 NEC 2SB600 2SD666C 2SD666
    Text: NEC SILICON POWER TRANSISTORS ELECTRON DEVICE 2SB600/2SD555 AUDIO FREQUENCY POWER AMPLIFIER PNP/NPN SILICON TRIPLE DIFFUSED TRANSISTORS D ESC R IPTIO N PACKAGE DIM EN SIO N S in millimeters inches The 2SB600/2SD555 are triple diffused high power transistors designed for use


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    2SB600/2SD555 2SB600/2SD555 2SB600 2SD555 2SB600 NEC 2SD666C 2SD666 PDF

    2SD555

    Abstract: 2SB600 300W TRANSISTOR AUDIO AMPLIFIER 200V transistor npn 10a 300 watts audio amplifier
    Text: r 2SD555/2SB600 2 8 0 5 5 5 /2SB600 v & i / 'J 3 V I* 7 V * * * / N PN /PN P N P N /P N P SILICON TRIPLE DIFFUSED MESA TRANSISTOR Frequency Power Amplifier ft »/F E A T U R E S • Mfflttifi 200~300W Hi-Fi 7 v 7'iOtB^/M zi v y ' t v 9 ') \ v y 7* ? X *i> Z o


    OCR Scan
    2SD555/2SB600 00-300W 2SB600 2SD555 ycleS50% 2SB600/2SD555 200/200V, 50/50mA* 10/10A, 300W TRANSISTOR AUDIO AMPLIFIER 200V transistor npn 10a 300 watts audio amplifier PDF

    NEC 1357

    Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
    Text: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft


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    2SD1340, 2SD1341, 2SD1342 2SD869 2SD820 2SD870 2SD821 2SD871 2SD553 2SD1173 NEC 1357 SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358 PDF

    2SD553

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS _ Unit In HIGH CURRENT SWITCHING APPLICATIONS. 00.3MAX. POWER AMPLIFIER APPLICATIONS. 0 1 6 = 0 .2 ✓- FEATURES: • Low Saturation Voltage : vCE sat =°-4V (Max.) (at IC=4A)


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    2SD553 2SB553. X25XlmmAtf 2SD553 PDF

    2SB553

    Abstract: 2SD553 AC75
    Text: T O S H IB A 2SD553 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS 10.3MAX. • • Low Saturation Voltage : V q e sa t “ 0.4V (Max.) (at Iq = 4A)


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    2SD553 2SB553. O-22NG 300x300x2mm 150X150X2mm 70X70X2mm 35X35Xlmm 25X25Xlmm 2SB553 AC75 PDF

    2SD636 R

    Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
    Text: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b


    OCR Scan
    2SD526 2SD545 2SD552 2SD553 2SD560 2SD568 2SD569 2SD571 2SB639H 2SD629H 2SD636 R 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601 PDF

    WE VQE 11 E

    Abstract: WE VQE 24 E 2SB553 2SD553 AC75
    Text: TO SH IBA 2SD553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 53.6 ±0.2 • • Low Saturation Voltage : Vq^ Complementary to 2SB553. s a t


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    2SD553 2SB553. WE VQE 11 E WE VQE 24 E 2SB553 2SD553 AC75 PDF