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    2SD596 DV3 Search Results

    2SD596 DV3 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SD596(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD596-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD596A-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SD596-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation

    2SD596 DV3 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD596DV3 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD596DV3 NEC Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor Mini Mold Scan PDF

    2SD596 DV3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor dv4

    Abstract: marking DV4 2SD596 2SD596 dv3
    Text: 2SD596 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.7 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. 92¡ À0. 05


    Original     		PDF 2SD596 OT-23-3L 100mA 700mA transistor dv4 marking DV4 2SD596 2SD596 dv3

    transistor dv4

    Abstract: 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SB624 DV4 sot23 10MHZ 2SD596 marking DV5 marking DV4

    transistor DV3

    Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SD596 2SB624 200TYP. 100mA) OT-23 BL/SSSTC024 transistor DV3 transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 transistor DV1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain. z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 2SB624 100mA 700mA 700mA, 10MHZ

    transistor dv4

    Abstract: transistor DV3 2SD596 DV4 sot23
    Text: 2SD596 SOT-23 Transistor NPN SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-23 2SD596 OT-23 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 DV4 sot23

    2SD596

    Abstract: transistor dv4 2SB624
    Text: 2SD596 SILICON TRANSISTOR SOT-23 3 AUDIO FREQUENCY POWER AMPLIFIER 1 NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA


    Original     		PDF 2SD596 OT-23 2SB624 100mA) 200mA 2SD596 transistor dv4

    2SD596 dv3

    Abstract: marking DV4 2SB624 2SD596 2sd59 transistor dv4
    Text: 2SD596 SILICON TRANSISTOR SOT-23 3 1 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 2 MINI MOLD 1. FEATURES 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.95 2.9 1.9 Complimentary to 2SB624 PNP Transistor 0.4 High DC current gain. HFE:200 TYP. VCE=1.0V, IC=100mA


    Original     		PDF 2SD596 OT-23 2SB624 100mA) 200mA 2SD596 dv3 marking DV4 2SD596 2sd59 transistor dv4

    2SD596

    Abstract: No abstract text available
    Text: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF 2SD596 OT-23 OT-23 MIL-STD-202E 2SD596

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 TRANSISTOR NPN SOT-23-3L FEATURES 1. BASE Power dissipation 2. EMITTER W (Tamb=25℃) 3. COLLECTOR 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current 0.7


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA 700mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SD596 OT-23 100mA) 2SB624 100mA 700mA 700mA, 10MHZ

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD596 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23 2SD596 OT-23 100mA 700mA 700mA,

    transistor dv4

    Abstract: 2SD596 10MHZ 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SD596 SOT-23-3L TRANSISTOR NPN FEATURES z High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) z Complimentary to 2SB624 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SD596 OT-23-3L 100mA) 2SB624 100mA 700mA 700mA, 10MHZ transistor dv4 2SD596 10MHZ 2SB624

    transistor dv4

    Abstract: transistor DV3 2SD596 SOT23-3L
    Text: 2SD596 SOT-23-3L Transistor NPN SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC Current gain.hFE:200 TYP.(VCE=1V,IC=100mA) Complimentary to 2SB624 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 2SD596 OT-23-3L OT-23-3L 100mA) 2SB624 700mA 700mA, 10MHZ 100mA transistor dv4 transistor DV3 2SD596 SOT23-3L

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


    Original     		PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    2SD596

    Abstract: D1298 SSA250 transistor dv4
    Text: DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM ENSIO NS The 2SD596 is designed for use in small type equipments especially recom­ mended for hybrid integrated circuit and other applications.


    OCR Scan     		PDF 2SD596 2SD596 D1298 SSA250 transistor dv4

    2SB624

    Abstract: 2SD596 F50450
    Text: NEC Aj Silico n T ra n s is to r m+Tixrx 2SD596 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-ÏÏÆ/ PACKAGE DIMENSIONS Unit:mm ««/FEA TU RES o m J 'B f t - B T t b ’I , ' ^ 7 " U -y K IC ffl t i r m & T t . 2 .8 ± 0 .2 Oh p £ [ wj ^ H p £ - 200 TYP. (V(;£ —1.0 V, Ic~100 rnA)


    OCR Scan     		PDF 100mA) 2SB624 PWS10ms, 2SD596 F50450

    transistor DV3

    Abstract: 2sd 596 2sd59
    Text: S IL IC O N T R A N S IS T O R 2SD596 A U D IO FREQ U ENCY PO W ER A M P L IF IE R N P N S IL IC O N E P IT A X IA L T R A N S IS T O R M IN I M O L D D E S C R IP T IO N PACKAGE DIMENSIONS The 2 S D 5 9 6 is designed for use in small type equipm ents especially recom ­


    OCR Scan     		PDF 2SD596 2SD596 transistor DV3 2sd 596 2sd59

    2SD596

    Abstract: 2S8624 2S0806
    Text: 2SD596.2SD596R Audio Frequency Power Amplifier NPN Silicon Epitaxial Transistor • Complimentary to 2S8624, 2SB624R PACKAGE DIMENSIONS • High DC Current Gain: h FE - 200 TYP. <VCE-1 .0 V , l c - 100mA in m illim a ttrt inches) ¿5 g) (0.098) 0.5 '% îl (0 02)


    OCR Scan     		PDF 2SD596 2SD596R 2S8624, 2SB624R 100mA) 2S8624 2S0806

    D 596

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SD 596 ELECTRON DEVICE / AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD D E S C R IP TIO N PACKAG E D IM E N S IO N S The 2S D 596 is designed fo r use in small type equipm ents especially recom ­


    OCR Scan     		PDF 2SD596 2SB624 D 596

    K68A

    Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
    Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E


    OCR Scan     		PDF SC-59 DO-35 SC-63) T0-220AB K68A a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711