Untitled
Abstract: No abstract text available
Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage
|
Original
|
PDF
|
2SD882H
O-126
|
Untitled
Abstract: No abstract text available
Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage
|
Original
|
PDF
|
2SD882H
O-126
|
Untitled
Abstract: No abstract text available
Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage
|
Original
|
PDF
|
2SD882H
O-126
|
Untitled
Abstract: No abstract text available
Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol Value Unit Collector to Base Voltage
|
Original
|
PDF
|
2SD882H
O-126
|