Untitled
Abstract: No abstract text available
Text: ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage
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Original
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PDF
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2SD882U
OT-89
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2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
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Original
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PDF
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2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
2SD882U-P
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2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
|
Original
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PDF
|
2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
2SD882U-P
|
2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
|
Original
|
PDF
|
2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
2SD882U-P
|
2SD882U-P
Abstract: No abstract text available
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 120
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Original
|
PDF
|
2SD882U-P
O-126
2SD882U-P
|
ic 4000
Abstract: 2SD882U-P 2SD882U
Text: ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in Medium Power Linear and Switching Applications E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 120 V
|
Original
|
PDF
|
2SD882U-P
O-126
t10ms)
200mA
500mA,
250mA,
ic 4000
2SD882U-P
2SD882U
|
2SD882U
Abstract: No abstract text available
Text: ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage
|
Original
|
PDF
|
2SD882U
OT-89
2SD882U
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