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    2SD886 Search Results

    2SD886 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD886 Jiangsu Changjiang Electronics Technology TRANSISTOR (NPN) Original PDF
    2SD886 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SD886 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD886 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD886 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD886 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD886 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD886 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD886 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD886 Panasonic Si NPN triple diffused planar. High hFE, AF power amplifier. Scan PDF
    2SD886A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD886A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD886A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD886A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD886A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD886A Panasonic Si NPN triple diffused planar. High hFE, AF power amplifier. Scan PDF

    2SD886 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SD886 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SD886 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: 2SD886 3A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier High Current 1Emitter 2Collector 3Base Collector 2 REF. 3


    Original     		PDF 2SD886 O-126 200mA 100mA 07-Mar-2011

    2SD886

    Abstract: No abstract text available
    Text: 2SD886 2SD886 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD886 O-126C 200mA 100mA 2SD886

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB776 TRANSISTOR PNP TO – 126C FEATURES z High Current Output up to 3A z Low Collector-Emitter Saturation Voltage z Complement to 2SD886 1. EMITTER 2. COLLECTOR


    Original     		PDF O-126C 2SB776 2SD886 -20mA -200mA -100mA

    2SD886

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO:


    Original     		PDF O-126 2SD886 O--126 200mA 100mA 2SD886

    Untitled

    Abstract: No abstract text available
    Text: 2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB776 NPN/2SD886 Unit Collector-Emitter Voltage


    Original     		PDF 2SB776 2SD886 2SB776 2SD886 O-126 PNP/2SB776 NPN/2SD886 14-Apr-08

    Untitled

    Abstract: No abstract text available
    Text: TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO—126C FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25℃) 2.COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-126 2SD886 200mA 100mA

    2SD886

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO:


    Original     		PDF O-126C 2SD886 O-126C 200mA 100mA 2SD886

    Untitled

    Abstract: No abstract text available
    Text: 2SD886 Plastic-Encapsulate Transistors NPN Features Power dissipation PCM: TO—126 1 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE


    Original     		PDF 2SD886 200mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR NPN TO – 126 FEATURES z Low Voltage z High Current 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-126 2SD886 200mA 100mA

    2SD886

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors 2SD886 TRANSISTOR NPN TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF O-126 2SD886 O--126 200mA 100mA 2SD886

    2SD886

    Abstract: No abstract text available
    Text: 2SD886 2SD886 TRANSISTOR NPN TO—126 FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD886 O--126 200mA 100mA 2SD886

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    2SB776

    Abstract: 2SD886 QW-R204-003
    Text: UTC 2SB776 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES 1 *High current output up to 3A


    Original     		PDF 2SB776 2SB776 2SD886 O-126 QW-R204-003 2SD886

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


    Original     		PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    A150D

    Abstract: 2SB776 2SD886
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES * High Current Output Up to 3A


    Original     		PDF 2SB776 2SB776 2SD886 2SB776-x-T60-K 2SB776-x-TN3-R 2SB776L-x-T60-K 2SB776L-x-TN3-R 2SB776G-x-T60-K 2SB776G-x-TN3-R O-126 A150D 2SD886

    2SD369A

    Abstract: to-53 2SC1025 MJE2491 KT816V matsua
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A PD r 'CBO Max hFE fT on ON) Min (Hz) 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 40 40 40 40 40 25 40 40 40 40 40 60 60 10 10 10 10 10 20 20 20 20 25 25 2 0M 10M 10M 1 0M 3 0M


    Original     		PDF 2N4232 2SB761 2SB929 2SB941 2SD1266 2SD856 2SD1761 BDT31A 2SD369A to-53 2SC1025 MJE2491 KT816V matsua

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SD892

    Abstract: 2SD893 2SD886 2SD886A 2SD892A 2SD893A
    Text: PANASONIC INDL/ELEK-CSEMI} 72C D | biääflSM " q d D w T cl Y ' =Z > y V 7 < f9 2SD886, 2SD886A 2SD886, 2S D8 86A '> ij zj > NPN ELMtäf&y l' —i ' M / S i NPN Triple Diffused Planar K liftiS ifS ä p , S t e f f l/H ig h hKE, AF Power Amplifier U n it * mm


    OCR Scan     		PDF 2SD886, 2SD886A 2SD886 2SD892 2SD893 2SD886A 2SD892A 2SD893A

    hFE-75

    Abstract: g14a 2SD886 2SD886A 800-1500
    Text: 2SD886, 2SD886A 2SD886, 2SD886A V IJ =i ^ N PN = m & W l 7 l s — f M / S i NPN Triple Diffused Planar « ra n « * , &mmnt M^m/mgh hFE, AF Power Amplifier 10.5 + 0.5 • 4# ^ /F e a tu re s • U nit ! mm £ hFE t5 ''S 5 / H i g h hFE 4.8max. 9.8max. Om


    OCR Scan     		PDF 2SD886, 2SD886A hFE75-' 2SD886 I-150 hFE-75 g14a 2SD886A 800-1500

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SD915

    Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
    Text: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)


    OCR Scan     		PDF 2SD866 2SD866A 2SD867 2SD868 2SD869 2SD870 2SD871 2SD886A T0-220F 2SD888 2SD915 2SD877 2SD889 2SD870 2SD878 2SD873 2SD867

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


    OCR Scan     		PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107