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    2SJ210 Search Results

    2SJ210 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ210-T2B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ210C-T1B-AT Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SJ210(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ210(0)-T1B-AT Renesas Electronics Corporation Power MOSFETs for Automotive, MM, / Visit Renesas Electronics Corporation
    2SJ210C(0)-T1B-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    2SJ210 Price and Stock

    Rochester Electronics LLC 2SJ210(0)-T1B-AT

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ210(0)-T1B-AT Bulk 21,000 902
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    Rochester Electronics LLC 2SJ210(0)-T1B-A

    P-CHANNEL SMALL SIGNAL MOSFET
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    DigiKey 2SJ210(0)-T1B-A Bulk 19,913 902
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    Renesas Electronics Corporation 2SJ210(0)-T1B-AT

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    Avnet Americas 2SJ210(0)-T1B-AT Reel 4 Weeks 1,086
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    Rochester Electronics 2SJ210(0)-T1B-AT 21,000 1
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    Renesas Electronics Corporation 2SJ210(0)-T1B-A

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    Rochester Electronics 2SJ210(0)-T1B-A 19,913 1
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    Renesas Electronics Corporation 2SJ210-T1B-A

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    Rochester Electronics 2SJ210-T1B-A 889 1
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    Chip1Stop 2SJ210-T1B-A 6,250
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    2SJ210 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ210 Kexin P-Channel MOSFET for Switching Original PDF
    2SJ210 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ210 NEC Semiconductor Selection Guide Original PDF
    2SJ210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ210 Unknown FET Data Book Scan PDF
    2SJ210 NEC MOS FIELD EFFECT TRANSISTOR Scan PDF
    2SJ210 NEC P-Channel MOS FET for Switching Scan PDF
    2SJ210-L NEC P-channel MOS FET Scan PDF
    2SJ210-T1B NEC P-channel MOS FET Scan PDF
    2SJ210-T2B NEC P-channel MOS FET Scan PDF

    2SJ210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ210

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Not necessary to consider driving current because of 0.4 3 Directly driven by Ics having a 5V poer supply. 1 Possible to reduce the number of parts by omitting the biasresistor.


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    PDF 2SJ210 OT-23 -10mA 2SJ210

    2SJ210

    Abstract: NEC PART NUMBER MARKING D1790
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 FEATURES • Directly driven by the output of ICs having a 5 V power source.


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    PDF 2SJ210 2SJ210, 2SJ210 NEC PART NUMBER MARKING D1790

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    8204B

    Abstract: 1SS355 2SJ210 2SK1590 2SK4035 GRM188B MCR03 RB500V-40 S-8204B S-8242B
    Text: CMOS IC应用手册 S-8204B系列的连接示例 Rev.1.2_00 S-8204B系列内置高精度电压检测电路和延迟电路,是用于3节或4节串联锂离子可充电电池保护的IC。 将S-8204B系列进行级联连接后,可以保护6节以上的串联锂离子电池组。


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    PDF S-8204B S-8204B34IC S-8204B6 5S-8204BS-8242B 8204B 1SS355 2SJ210 2SK1590 2SK4035 GRM188B MCR03 RB500V-40 S-8204B S-8242B

    BAT3VDLS-8209A3

    Abstract: S-8209A 2SA1037AK 2SC2412K 2SJ210 GRM188 MCR03 S-812C S-8211D SSM3K301T
    Text: CMOS ICアプリケーションノート S-8209Aシリーズの使用例 Rev.1.3_00 S-8209Aシリーズはセルバランス機能付バッテリー保護用ICです。 このアプリケーションノートは、S-8209Aシリーズを用いたアプリケーションについて代表的な接続例を説明した参考


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    PDF S-8209A S-8209AIC S-8209A. BAT3VDLS-8209A3 S-8209A 2SA1037AK 2SC2412K 2SJ210 GRM188 MCR03 S-812C S-8211D SSM3K301T

    RVC6

    Abstract: S-8204A nec ic2 GRM188B 8204A rohm M7 MCR03 1SS355 2SA1037AK 2SJ210
    Text: CMOS IC应用手册 S-8204A系列的连接示例 Rev.1.3_00 S-8204A系列内置高精度电压检测电路和延迟电路,是用于3节或4节串联锂离子可充电电池保护的IC。 将S-8204A系列进行级联连接后,可以保护6节以上的串联锂离子电池组。


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    PDF S-8204A S-8204A34IC S-8204A6 RVC6 S-8204A nec ic2 GRM188B 8204A rohm M7 MCR03 1SS355 2SA1037AK 2SJ210

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    pa1476h

    Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
    Text: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674


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    PDF X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


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    PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    gsw1

    Abstract: SC-59 2SJ series L SC-70
    Text: N & P CHANNEL SMALL SIGNAL MOSFETS 2SK & 2SJ SERIES • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V SINGLE N & P CHANNEL MOSFETS The latest comprehensive data to fully support these parts is readily available. • •


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    PDF 200mA 2SK1958 2SK2158 2SK1580 2SK1581 2SK1657 2SK1658 2SK1824 2SK2858 2SK1399 gsw1 SC-59 2SJ series L SC-70

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗2SA988 2SA992


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    PDF X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    2SJ210

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    MPA2733GR

    Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG

    S-8209A

    Abstract: s8209a GRM188 8209A 2SA1037AK 2SC2412K 2SJ210 MCR03 S-812C S-8211D
    Text: CMOS IC应用手册 S-8209A系列的应用示例 Rev.1.3_00 S-8209A系列是带电量平衡功能的电池保护用IC。 本应用手册是说明有关使用S-8209A系列的具有代表性的电路连接示例的参考资料。 有关产品的详情和规格,请确认该产品的数据表。


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    PDF S-8209A S-8209AIC S-8209A s8209a GRM188 8209A 2SA1037AK 2SC2412K 2SJ210 MCR03 S-812C S-8211D

    2SJ210

    Abstract: MARK H16 2SJ21 T200 T400
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device OUTLINE DIMENSIONS Unit : mm which can be driven directly by the output of ICs having a 5 V power 2.8 ± 0.2 source. 1.5


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    PDF 2SJ210 2SJ210, 2SJ210 MARK H16 2SJ21 T200 T400

    2SJ21

    Abstract: 2SJ210 T200 T400
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device


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    PDF 2SJ210 2SJ210, 2SJ21 2SJ210 T200 T400

    diode sj21

    Abstract: No abstract text available
    Text: DATA SH E E T NEC ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR / _ _ 2SJ210 P-C H A N N EL M O S FET FO R SW IT C H IN G T h e 2 SJ21 0, P-channel vertical type M O S F E T , is a sw itch ing device OUTLINE DIMENSIONS Unit : mm w h ich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V power


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    PDF 2SJ210 diode sj21

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    J Fet marking 2 AW

    Abstract: 56m1 lm 3773 2SJ210 marking 7tw VTA90
    Text: 066 L UOjJBJOdJOQ Q3|\| IM I 6 6 I -ÍJEnUBf m z% a OSIH— SS — a OSI Mm 00Z 3,sl æ "M. K •M ¥ ® V 9 U Ì-J1 * M » ± <V Mi (as[nd)aj ^ ^ yra 00Í- + yui 002 + (oa)aj ® I!) S l < 02 + 0= SCIA SS0A 33 11 ¡SU y — A • 4 — .a 0= S0A ssa^


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    PDF 2SJ210 2SJ210Ã oo--01 J Fet marking 2 AW 56m1 lm 3773 2SJ210 marking 7tw VTA90

    2S*1206

    Abstract: 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ200 2SJ214 2SJ201
    Text: - 24 - « tt m £ & m m f t ? 1 * K jç. H V m * £ (V) * * P d /P c h (A) % m Í& * * (W) I gss (max) (A) Vg s (V) 0*3 (min) (max) Vd s (A) (A) (V) (Ta=25Xl) (min) (max) Vd s (V) (V) (V) Id (A) (min) (S) Vd s {\ l f (V) 1d (A) 2SJ200 LF PA MOS P E -180 DSS


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    PDF Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ214 2SJ201