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    2SJ23 Search Results

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    2SJ23 Price and Stock

    Toshiba America Electronic Components 2SJ238TE12L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SJ238TE12L 3,564 3
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    • 10 $1.6875
    • 100 $1.4062
    • 1000 $0.7425
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    Quest Components 2SJ238TE12L 2,851
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $0.9375
    • 10000 $0.825
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    Singatron Enterprises Co 2SJ2369-003111F

    AUDIO JACK, 3.5MM, 12V, 1A, RA, TH-6P, WI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ2369-003111F 59
    • 1 $1.5
    • 10 $1.5
    • 100 $0.7
    • 1000 $0.7
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    Toshiba America Electronic Components 2SJ239

    Power Field-Effect Transistor, 5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 2SJ239 700
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    Others 2SJ2311-001111

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    Chip 1 Exchange 2SJ2311-001111 5,301
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    Others 2SJ239(TE16L)

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    Chip 1 Exchange 2SJ239(TE16L) 714
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    2SJ23 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ230 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ230 Unknown FET Data Book Scan PDF
    2SJ230 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ230 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ231 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ231 Unknown FET Data Book Scan PDF
    2SJ231 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ231 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF
    2SJ232 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ232 Unknown FET Data Book Scan PDF
    2SJ232 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ232 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ233 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ233 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ233 Unknown FET Data Book Scan PDF
    2SJ233 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ234 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ234 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ234 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ234 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SJ23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ231

    Abstract: EN3816
    Text: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0


    Original     		PDF EN3816 2SJ231 2SJ231] 2SJ231 EN3816

    2SJ234

    Abstract: Hitachi DSA001651
    Text: 2SJ234 L , 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    Original     		PDF 2SJ234 Hitachi DSA001651

    2SJ230

    Abstract: No abstract text available
    Text: Ordering number : EN3815 SANYO Semiconductors DATA SHEET 2SJ230 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.


    Original     		PDF EN3815 2SJ230 2SJ230] 2SJ230

    2SJ231

    Abstract: No abstract text available
    Text: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0


    Original     		PDF EN3816 2SJ231 2SJ231] 2SJ231

    2SJ231

    Abstract: ITR00141 ITR00142 ITR00143 ITR00144 ITR00145 ITR00146
    Text: 注文コード No.N 3 8 1 6 2SJ231 No. 3 8 1 6 三洋半導体ニューズ 52099 新 2SJ231 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ231 250mA 250mA, ITR00148 ITR00146 --50V --10V ITR00145 2SJ231 ITR00141 ITR00142 ITR00143 ITR00144 ITR00145 ITR00146

    2SJ230

    Abstract: ITR00132 ITR00133 ITR00134 ITR00135 ITR00136 ITR00137
    Text: 注文コード No.N 3 8 1 5 2SJ230 三洋半導体データシート 2SJ230 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ230 --30V --10V ITR00136 ITR00139 ITR00140 2SJ230 ITR00132 ITR00133 ITR00134 ITR00135 ITR00136 ITR00137

    2SJ232

    Abstract: No abstract text available
    Text: Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original     		PDF EN3817 2SJ232 2SJ232] 2SJ232

    2SJ233

    Abstract: No abstract text available
    Text: Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original     		PDF EN3818 2SJ233 2SJ233] 2SJ233

    2SJ230

    Abstract: No abstract text available
    Text: Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original     		PDF EN3815 2SJ230 2SJ230] 2SJ230

    2085A

    Abstract: 2SJ233 ITR00159 ITR00160 ITR00161 ITR00162 ITR00163 ITR00164 ta71
    Text: 注文コード No.N 3 8 1 8 2SJ233 三洋半導体データシート 2SJ233 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ233 ITR00165 ITR00166 ITR00167 2085A 2SJ233 ITR00159 ITR00160 ITR00161 ITR00162 ITR00163 ITR00164 ta71

    2SJ232

    Abstract: ITR00150 ITR00151 ITR00152 ITR00153 ITR00154 ITR00155
    Text: 注文コード No.N 3 8 1 7 2SJ232 三洋半導体データシート 2SJ232 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ232 600mA 600mA, --50V --10V ITR00154 ITR00156 2SJ232 ITR00150 ITR00151 ITR00152 ITR00153 ITR00154 ITR00155

    2SJ234

    Abstract: No abstract text available
    Text: 2SJ234 L , 2SJ234 S Silicon P Channel MOS FET Application DPAK-1 DPAK High speed power switching Features 4 4 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source • Suitable for DC – DC convertor, motor drive,


    Original     		PDF 2SJ234 2SJ234

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		PDF 2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL

    Untitled

    Abstract: No abstract text available
    Text: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ232 --10V --600mA --20V s----20V 31893MH A8-7974

    Vgs2,0v

    Abstract: 2SJ230
    Text: Ordering number:EN3815 -, No.3815 _ 2SJ230 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.


    OCR Scan     		PDF EN3815 2SJ230 Vgs2,0v 2SJ230

    Untitled

    Abstract: No abstract text available
    Text: 2SJ231 2087 LD L o w D rive S eries VDs s = 1 0 0 V P Channel Power M OSFET •I/3816 F eatu res - Small ON resistance. - Very high-speed switching. - Low-voltage drive. •Meets radial taping. A bsolute Maximum Ratingsmt Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SJ231 I/3816 -250m 250mA, --20V, VDS----20 VDS----20V, --500mA, D151MH,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ238 Field Effect Transistor U n i t in m m Silicon P Channel MOSType L2-t>MOS IV 4.6MAX. High Speed, High Current DC-DC Converter, 1,6 MAX. 0.4 ± 0 .0 5 1.7 MAX. J3a= Relay Drive and Motor Drive Applications “ 3 n F e a tu re s


    OCR Scan     		PDF 2SJ238 00E15b?

    2SJ238

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ238 Field Effect Transistor U n it in m m Silicon P Channel MOSType L2-ti-MOS IV 1, 6 MAX 4 .6 M A .X . High Speed, High Current DC-DC Converter, 0 .4 j t P .0 5 1.7 MAX. 3 Relay Drive and Motor Drive Applications F e a tu r e s


    OCR Scan     		PDF 2SJ238 -100nA 600mm2 0G21Sbb 00215b?

    2SJ234

    Abstract: No abstract text available
    Text: 2SJ234 L , 2SJ234(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive


    OCR Scan     		PDF 2SJ234

    2SJ238

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ238 Field Effect Transistor U n it in m m Silicon P Channel MOS Type L2-jc-MOS IV 1 6 MAX. 46M AX. High Speed, High Current DC-DC Converter, 0.4±0.05 1.7 MAX, E3 - Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ238 2SJ238

    Untitled

    Abstract: No abstract text available
    Text: 2SJ233 LD L o w D riv e S e rie s 2085 VDs s = 1 0 0 V P Channel Power M OSFET E 3818 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ233

    2SJ239

    Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
    Text: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS


    OCR Scan     		PDF Ta-25 2SJ230 2SJ231 2SJ232 2SJZ33 2SJ234Ã 155ns, 500nstyp 2SJ291 200ns, 2SJ239 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ232 2SJ234

    2sj239

    Abstract: 2SJ239(TE16L)
    Text: TOSHIBA 2SJ239 Field Effect Transistor Silicon P Channel MOS Type L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ Rds(ON) = 0-25Q (Typ.)


    OCR Scan     		PDF 2SJ239 0-25Q 100//B 2sj239 2SJ239(TE16L)

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915