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    2SJ275 Search Results

    2SJ275 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ275 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ275 Unknown P-Channel Power MOSFET Scan PDF
    2SJ275 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SJ275 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ275FD Unknown P-Channel Power MOSFET Scan PDF

    2SJ275 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ275

    Abstract: No abstract text available
    Text: Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ275] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original
    PDF EN4240 2SJ275 2SJ275] 2SJ275-applied 2SJ275

    2SJ275

    Abstract: ITR00318 ITR00319 ITR00320 ITR00321 ITR00322
    Text: 注文コード No.N 4 2 4 0 2SJ275 No. 4 2 4 0 三洋半導体ニューズ 61499 新 2SJ275 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original
    PDF 2SJ275 IT00324 IT00325 ITR00322 IT00326 IT00327 2SJ275 ITR00318 ITR00319 ITR00320 ITR00321 ITR00322

    2SJ275

    Abstract: No abstract text available
    Text: Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ275] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.


    Original
    PDF EN4240 2SJ275 2SJ275] 2SJ275-applied 2SJ275

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original
    PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original
    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original
    PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original
    PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    2SJ275

    Abstract: No abstract text available
    Text: Ordering number:EN4240 2SJ275 No.4240 P-C hannel MOS Silicon FET SANTO Very High-Speed Switching Applications j F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.


    OCR Scan
    PDF EN4240 2SJ275 2SJ275-applied

    2SJ275

    Abstract: BU100
    Text: 2SJ275 2093 2090 LD L o w D rive S eries VDs s = 1 0 0 V P Channel Power MOSFET 4240 F e a tu re s •Low ON resistance. • Very high-speed switching. ■Low-voltage drive. ■Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.


    OCR Scan
    PDF 2SJ275 2SJ275-applied 10/iS, 10/JS 2SJ275 BU100

    Untitled

    Abstract: No abstract text available
    Text: 2SJ275 2093 LD L o w D rive S eries 2090 V DSs = 1 0 0 V P Channel Power M OSFET '£4240 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.


    OCR Scan
    PDF 2SJ275 2SJ275-applied

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan
    PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26

    2SK1925

    Abstract: No abstract text available
    Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5


    OCR Scan
    PDF 2SK1737 2SK1738 T0220 2SK1921* 2SK2142* 2SJ254 0220M 2SK1925

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan
    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2SK2164

    Abstract: 2SK1885 2SJ270 2SJ260 2sj261
    Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan
    PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2SK2164 2SK1885 2SJ270 2SJ260 2sj261

    2SJ468

    Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
    Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8


    OCR Scan
    PDF 2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336