2SK1119 Search Results

2SK1119 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components 2SK1119(F) MOSFET N-CH 1000V 4A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK1119(F)	Tube			50	1 - 10 - 100 $2.7636 1000 $2.7636 10000 $2.7636	Buy Now
Toshiba America Electronic Components 2SK1119 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK1119		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK1119 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK1119	Toshiba	TRANS MOSFET N-CH 1000V 4A 3TO-220AB	Original	PDF
2SK1119	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
2SK1119	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK1119	Toshiba		Original	PDF
2SK1119	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1119	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1119	Toshiba	Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS II 5)	Scan	PDF
2SK1119	Toshiba	Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications	Scan	PDF
2SK1119(F)	Toshiba	2SK1119 - MOSFET N-CH 1000V 4A TO-220AB	Original	PDF

2SK1119 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK1119 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 O-220AB SC-46 2-10ments,	PDF
k1119 Abstract: No abstract text available Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 k1119	PDF
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent	PDF
K1119 Abstract: 2SK1119 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 K1119 2SK1119 2-10P1B	PDF
k1119 Abstract: 2SK1119 2-10P1B VDD400 2SK1119-3 Text: 2SK1119 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅡ.5 2SK1119 ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS ( ON ) = 3.0Ω(標準) z 順方向伝達アドミタンスが高い。	Original	2SK1119 O-220AB SC-46 2-10P1B VDD400 K1119 k1119 2SK1119 2-10P1B 2SK1119-3	PDF
k1119 Abstract: 2-10P1B 2SK1119 Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 k1119 2-10P1B 2SK1119	PDF
Untitled Abstract: No abstract text available Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.) Low leakage current	Original	2SK1119 O-220ABments,	PDF
k1119 Abstract: 2SK1119 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.) Unit: mm	Original	2SK1119 k1119 2SK1119 2-10P1B	PDF
K1119 Abstract: 2SK1119 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 K1119 2SK1119 2-10P1B	PDF
2SK1119 Abstract: 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 2SK1119 2-10P1B	PDF
SSH6N80 Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
Toshiba TMPA8873 Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6	Original	SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF

2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
nsi 60 jg Abstract: No abstract text available Text: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm	OCR Scan	2SK1119 300/uA nsi 60 jg	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR j <; V SILICON N CHANNEL MOS TYPE tt-MOSII-5 k Hm. 1• 1■ 1■ q«T1 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in min “	OCR Scan	2SK1119	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S K 1 119 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1119) INDUSTRIAL APPLICATIONS U n it in mm HIGH SPEED, HIGH C URRENT SW ITC H IN G APPLICATIONS. DC-DC CO NVERTER A N D M O TO R DRIVE APPLICATIO N S.	OCR Scan	2SK1119 2SK1119) 2SK1119	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1119 Field Effect Transistor In d u s tria l A p p lic a tio n s U n it in m m Silicon N Channel MOS Type n-MOS II >3.6 ± 0 . 2 1 0 .3 M AX High Speed, High Current DC-DC Converter, w \ Relay Drive and Motor Drive Applications F e a tu re s X	OCR Scan	2SK1119	PDF
2SK111 Abstract: 24N10 2-10P1B 2SK1119 Text: TOSHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Drain-Source ON Resistance	OCR Scan	2SK1119 2SK111 24N10 2-10P1B 2SK1119	PDF
Untitled Abstract: No abstract text available Text: 2SK1119 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(O N )~3.00 (Typ.)	OCR Scan	2SK1119 20kil)	PDF
k1119 Abstract: transistor k1119 power switching Text: FIELD EFFECT TRAN SISTO R 2SK1119 SILICON N CHANNEL MOS TYPE a:-MOSii HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. INDUSTRIA L APPLICATIO NS SWITCHING POWER SUPPLY A PP LIC ATIO NS. U n i t in mm 10.3MAI. *3.6±0.2 îï FEATURES: • Low D ra in -S o u r c e ON R e s is ta n c e :	OCR Scan	2SK1119 Puls700 k1119 transistor k1119 power switching	PDF
2SK1119 Abstract: 2-10P1B 2sk111 Text: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm • Low Drain-Source ON Resistance	OCR Scan	2SK1119 2SK1119 2-10P1B 2sk111	PDF
transistor 2SK1603 Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358 Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all	OCR Scan	OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358	PDF

Privacy Settings

2SK1119 Search Results

2SK1119 Price and Stock

Toshiba America Electronic Components 2SK1119(F)

Toshiba America Electronic Components 2SK1119

2SK1119 Datasheets (9)

2SK1119 Datasheets Context Search

Untitled

k1119

std2n52

K1119

k1119

k1119

Untitled

k1119

K1119

2SK1119

SSH6N80

5252 F 1009 4-pin

Toshiba TMPA8873

2SK2056

2SK3567 equivalent

nsi 60 jg

Untitled

Untitled

Untitled

2SK111

Untitled

k1119

2SK1119

transistor 2SK1603