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    Renesas Electronics Corporation 2SK1254STL-E

    Silicon N Channel MOS FET (Alt: 2SK1254STL-E)
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    Avnet Silica 2SK1254STL-E 22 Weeks 3,000
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    2SK1254S Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1254(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK1254S Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1254S Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1254S Kexin N-Channel MOSFET Original PDF
    2SK1254(S) Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1254S Renesas Technology SMD, Low On-Resistance, 4V Gate Drive, 120V 3A, Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    2SK1254S Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK1254S Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1254S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK1254S Hitachi Semiconductor Silicon N-Channel MOSFET Scan PDF
    2SK1254S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1254S Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK1254S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25


    Original
    2SK1254S O-252 PDF

    2SK1254S

    Abstract: voltage regulator 10V smd
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1


    Original
    2SK1254S O-252 2SK1254S voltage regulator 10V smd PDF

    2SK1254STL-E

    Abstract: 2SK1254L DATA SHEET 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
    Text: 2SK1254 L , 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source


    Original
    2SK1254 REJ03G0917-0200 ADE-208-1255) PRSS0004ZD-A PRSS0004ZD-C 2SK1254STL-E 2SK1254L DATA SHEET 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original
    REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    2SK1254STL-E

    Abstract: 2SK1254 2SK1254L-E PRSS0004ZD-A PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF