Untitled
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30
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2SK1614
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2SK1614
Abstract: SC-65
Text: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 900 V VGSS ±30 V DC ID ±8 A Pulse
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2SK1614
2SK1614
SC-65
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2SK1614
Abstract: SC-65 2sk16
Text: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 V ID Pulse IDP ±8 A ±16 A EAS* Avalanche energy capacity
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2SK1614
2SK1614
SC-65
2sk16
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Untitled
Abstract: No abstract text available
Text: 2SK1614 Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 900 V Gate-Source voltage VGSS ±30 V DC ID ±8 A Pulse IDP ±16 A EAS * 60 mJ Avalanche energy capability
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2SK1614
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
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MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
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2SK1614
Abstract: No abstract text available
Text: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)
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2SK1614
capacitance155'
2SK1614
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2SK2324
Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)
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2SK758
O-220F
2SK963
2SK1478
A2SK2122
O-220E
2SK1036
2SK766
2SK2324
TO-220E
2SK1609
2SK1614
2SK2129
220E
2SK1606
2SK1611
2sk2128
2SK2323
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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OF03
Abstract: 2SK1263 2SK2377
Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128
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A2SK2277
2SK2014
2SK2047
2SK1834
220Fro
2SK1980
A2SK2128
A2SK2125
2SK1833
2SK2509
OF03
2SK1263
2SK2377
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2sk2324
Abstract: 2SK2124 2SK2127 2sk2323
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )
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O-22C
O-220E
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
2SK2509
2sk2324
2SK2127
2sk2323
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MN1280
Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074
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MN1380
MN13801
MN13802
MN1381
MN13811
MN13812
MN1382
MN13821
MN13822
MN1544
MN1280
AN6512
MN15814
MN15245
2Sb1163a
mn158413
AN7210
AN7226
MN15287
MN15283
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2SK1615
Abstract: 2SK1619 2sk1633 2SK1638 2SK1617 2SK1637 2SK1630 2SK1634 2501L 2SK1616
Text: - 114 - f ï m £ it € m m m & % H 1 K N E V Eft * 900 DSS fê. X ft* (V) fê (A) % ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft ft t*fc (13=25*0) (min) (max) V d s (V) (V> (V) (min) (max) Vd s (A) (A) (V) (min) (S) Id (A) Vd s (V) Id (A) ±30 S 8 D
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2SK1614
2SK1615
2SK1616
2SK1617
2SK1618
380ns,
430nstyp
2SK1635
109ns.
170nstyp
2SK1619
2sk1633
2SK1638
2SK1637
2SK1630
2SK1634
2501L
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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Untitled
Abstract: No abstract text available
Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8
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O-220E
2SK1406
A2SK2572
2SK1605
2SK1606
2SK2123
2SK2124
2SK1607
2SK2032
2SK2571
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