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    2SK17 Search Results

    2SK17 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    2SK1775-E Renesas Electronics Corporation Nch Single Power Mosfet 900V 8A 1600Mohm To-3Pfm Visit Renesas Electronics Corporation
    2SK1764KYUR-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 450Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SK1764KYTL-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 2A 450Mohm Upak/Sc-62 Visit Renesas Electronics Corporation
    2SK1773-E Renesas Electronics Corporation Switching N-Channel Power Mosfet, TO-3P, /Tube Visit Renesas Electronics Corporation
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    2SK17 Price and Stock

    Renesas Electronics Corporation 2SK1775-E

    MOSFET N-CH 900V 8A TO3P
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    DigiKey 2SK1775-E Tube
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    Avnet Silica 2SK1775-E 28 Weeks 3,240
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    Rochester Electronics LLC 2SK1733-AZ

    N-CHANNEL SMALL SIGNAL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1733-AZ Bulk 1,665
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    Rochester Electronics LLC 2SK1736-AZ

    MOSFET N-CH
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    DigiKey 2SK1736-AZ Bulk 1,211
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    Rochester Electronics LLC 2SK1726-TD-E

    NCH 4V DRIVE SERIES
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    DigiKey 2SK1726-TD-E Bulk 1,902
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    Rochester Electronics LLC 2SK1740-5-TB-E

    N-CHANNEL JUNCTION SILICON FET
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    DigiKey 2SK1740-5-TB-E Bulk 258
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    2SK17 Datasheets (466)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK17 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2SK17 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK17 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK17 Unknown FET Data Book Scan PDF
    2SK17 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SK17 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK17 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK170 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK170 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK170 Unknown FET Data Book Scan PDF
    2SK170 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK170 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK170 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK170 Toshiba TR Scan PDF
    2SK170 Toshiba Junction FETs Scan PDF
    2SK170 Toshiba N-Channel MOSFET Scan PDF
    2SK1700 Unknown FET Data Book Scan PDF
    2SK1701 Unknown FET Data Book Scan PDF
    2SK1702 Unknown FET Data Book Scan PDF
    2SK1703 Unknown FET Data Book Scan PDF
    ...

    2SK17 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original
    2SK1771 PDF

    2SK1712

    Abstract: FM20
    Text: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 6.2 mJ ±60 (Tch ID (pulse) PD EAS * 150ºC)


    Original
    2SK1712 2SK1712 FM20 PDF

    2SK1728

    Abstract: No abstract text available
    Text: Ordering number:EN3823 N-Channel Silicon MOSFET 2SK1728 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK1728] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original
    EN3823 2SK1728 2SK1728] 25max 2SK1728 PDF

    EN4112

    Abstract: 2SK1740 N1593
    Text: Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Package Dimensions • Adoption of FBET process. · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK1740-applied sets to be made small and slim.


    Original
    EN4112 2SK1740 2SK1740-applied 2SK1740] EN4112 2SK1740 N1593 PDF

    2SK1761

    Abstract: DSA003639
    Text: 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


    Original
    2SK1761 ADE-208-1315 O-220AB 2SK1761 DSA003639 PDF

    2sk1712

    Abstract: FM20 8A 820
    Text: 2SK1712 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 60 V V BR DSS VGSS ±10 V I GSS ID ±15 A I DSS A VTH 1.0 30 (Tc = 25ºC) W Re (yfs) 5.6 ±60 (Tch ID (pulse) PD * 150ºC) 6.2 mJ


    Original
    2SK1712 2sk1712 FM20 8A 820 PDF

    2SC2812

    Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
    Text: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,


    Original
    ENN7021 2SK1740 2SC2812 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3


    Original
    2SK1761 O-220AB D-85622 Hitachi DSA002780 PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


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    2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    2SK1725

    Abstract: No abstract text available
    Text: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage


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    2SK1725 Vpp-15V 41093TH A8-7832 2SK1725 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage


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    2SK1724 10//S, 250mm2X 31893TH A8-7831 PDF

    7842

    Abstract: No abstract text available
    Text: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage


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    2SK1727 400mA 400mA, 800mA, 41093TH A8-7842 7842 PDF

    E36J

    Abstract: No abstract text available
    Text: 2SK1731 LD L o w D rive S eries VDss = 30V 2085 N Channel Power M OSFET E'36J6 F e a tu re s • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. ■Its height onboard is 9.5mm. - M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


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    2SK1731 --10V 32593TH E36J PDF

    2SK68

    Abstract: 2SK1774 2SK684 10MAVgs
    Text: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC


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    2SK1774 0D13550 2SK684 D013SS1 2SK68 10MAVgs PDF

    2SK1737

    Abstract: No abstract text available
    Text: Ordering number:EN3 8 3 2 _ 2SK1737 No.3832 N-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu res • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.


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    EN3832 2SK1737 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features


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    2SK1792 O-22QFL 100nA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TQC17ESQ 0 0 2 3 3 4 4 7T7 TO SH IBA FIELD EFFECT TRANSISTOR 2SK1721 SILICON N CHANNEL M OS TYPE ff- M O SII 2 S K 1 721 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL U n it in mm DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low Drain-Source O N Resistance


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    17ESQ 2SK1721 O-220FL 0023b43 O-220SM PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS 5.1 MAX. • • • • • Recommended for first stages of EQ and M.C. Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ.


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    2SK170 95nV/VHz PDF

    2SK1717

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1717 Field Effect Transistor Industrial Applications Silicon N Channel M OSType L2-rt-MOS IV 4.6 MAX. 1.7 MAX. High Speed, High Current DC-DC Converter, - 0 Relay Drive and Motor Drive Applications Unit in mm 1,6 0.4 ±00 5


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    2SK1717 600mi 0021b41 2SK1717 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK1775 PDF

    transistor Sh 550

    Abstract: 2SK1721
    Text: 2SK1721 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 7 21 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —2.50 (Typ.)


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    2SK1721 O-220FL 961001EAA2' transistor Sh 550 2SK1721 PDF

    2SK1925

    Abstract: No abstract text available
    Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5


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    2SK1737 2SK1738 T0220 2SK1921* 2SK2142* 2SJ254 0220M 2SK1925 PDF

    2SK1750

    Abstract: 2SK1750-Z 2SK1751 2SK1751-Z
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC r MOS FIELD EFFECT POWER TRANSISTORS 2SK1750,1750-Z/2SK1751,1751-Z SWITCHING N-CHANNEL POWER MOS FET


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    2SK1750 1750-Z/2SK1751 751-Z 2SK1750/2SK1751 IEI-1209) 2SK1750-Z 2SK1751 2SK1751-Z PDF

    2SK170

    Abstract: 41lA
    Text: TO SH IBA 2SK170 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 70 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 M A X. • • Recommended for firststages of EQ and M.C. Head Amplifiers. High |Yfs! : |Yfs! = 22 mS typ.


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    2SK170 --40V 2SK170 41lA PDF