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    2SK1830 MOSFET Search Results

    2SK1830 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    2SK1830 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    Power MOSFET, toshiba

    Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA

    HN7G02FU

    Abstract: 2SK1830 RN2110 2SK183
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU 2SK183

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SA1955

    Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET

    SCS-70

    Abstract: SSM6J08FU HN1K06FU
    Text: 5 Small-Signal MOSFETs Toshiba present a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to


    Original     		PDF SC-59) SCS-70) SSM6J06FU SSM6J08FU SSM6K07FU SSM6J07FU SSM3J13T SSM3K11T SSM3K01T SSM3J01T SCS-70 HN1K06FU

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Transistor Silicon PNP Epitaxial S-MOS Planar Type with built-in bias resistor HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. • The transistor and S-MOS combined allows reduced part count, thus


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    Untitled

    Abstract: No abstract text available
    Text: HN7G02FU TOSHIBA Transistor Silicon PNP Epitaxial S-MOS Planar Type with built-in bias resistor HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. • Unit: mm The transistor and S-MOS combined allows reduced part count, thus


    Original     		PDF HN7G02FU RN2110 2SK1830

    2SK1830 MOSFET

    Abstract: mosfet vgs 5v 2SK1830 HN7G01FU 2SA1955 mosfet vth 5v
    Text: HN7G01FU 暫定資料 東芝 複合デバイス HN7G01FU ○ パワーマネジメントスイッチ用 ○ ドライバ回路用 ○ インタフェース回路用 単位: mm z トランジスタおよび MOS-FET が内蔵されているため部品点数の削減


    Original     		PDF HN7G01FU 2SA1955 2SK1830 2SK1830 MOSFET mosfet vgs 5v 2SK1830 HN7G01FU 2SA1955 mosfet vth 5v

    2SK1830

    Abstract: HN7G05FU RN2301 ID3-050
    Text: HN7G05FU 東芝複合デバイス HN7G05FU ○ パワーマネジメントスイッチ用 ○ インバータ回路用 ○ ドライバ回路用 ○ インターフェース回路用 単位: mm トランジスタ及び S-MOS が内蔵されている為部品点数の


    Original     		PDF HN7G05FU RN2301 2SK1830 2SK1830 HN7G05FU RN2301 ID3-050

    MV3000

    Abstract: 2SK1830 HN7G02FU RN2110
    Text: HN7G02FU 東芝トランジスタ シリコンエピタキシャルPNP バイアス抵抗内蔵 -S-MOSプレーナ形 HN7G02FU ○ パワーマネジメントスイッチ用 ○ インバータ回路用 ○ ドライバ回路用 ○ インタフェース回路用


    Original     		PDF HN7G02FU RN2110 2SK1830 MV3000 2SK1830 HN7G02FU RN2110

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855

    2SA1955

    Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
    Text: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA

    2SA1955

    Abstract: 2SK1830 HN7G01FU
    Text: HN7G01FU TOSHIBA TOSHIBA TENTATIVE MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 ± 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01 2SA1955 2SK1830 HN7G01FU