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    2SK2329Ã Search Results

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    2SK2329Ã Price and Stock

    Rochester Electronics LLC 2SK2329L-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2329L-E Bulk 195
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    • 1000 $1.54
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    Renesas Electronics Corporation 2SK2329-L(E)

    Trans MOSFET N-CH Si 30V 10A 3-Pin(3+Tab) DPAK(L)-(2) Box
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    Verical 2SK2329-L(E) 4,294 216
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    • 1000 $1.575
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    Renesas Electronics Corporation 2SK2329L-E

    2SK2329 - Power Field-Effect Transistor, 10A, 30V, N-Channel MOSFET '
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    Rochester Electronics 2SK2329L-E 4,294 1
    • 1 $1.48
    • 10 $1.48
    • 100 $1.39
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    Renesas Electronics Corporation 2SK2329S

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 10 A;
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    Vyrian 2SK2329S 345
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    Hitachi Ltd 2SK2329(S)

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Terminal Position: SINGLE; No. of Terminals: 2;
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    Vyrian 2SK2329(S) 53
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    2SK2329Ã Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2329 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2329 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2329-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2329L Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2329L Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2329(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2329L Renesas Technology High Speed Power Amplifier, 30V 10A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2329L Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 10; Pch : 20; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: 0.03; RDS (ON) typ. (ohm) @2.5V: 0.04; Ciss (pF) typ: 1250; toff ( us) typ: 0.225; Package: DPAK (L)- (2) Original PDF
    2SK2329L Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2329(L) Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2329S Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2329S Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2329(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2329S Kexin N-Channel MOSFET Original PDF
    2SK2329(S) Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2329S Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 10; Pch : 20; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: 0.03; RDS (ON) typ. (ohm) @2.5V: 0.04; Ciss (pF) typ: 1250; toff ( us) typ: 0.225; Package: DPAK (S) Original PDF
    2SK2329S Renesas Technology SMD, High Speed Power Amplifier, 30V 10A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2329S Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2329S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF