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    2SK2329S Price and Stock

    Renesas Electronics Corporation 2SK2329S

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 10 A;
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    Vyrian 2SK2329S 345
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    Hitachi Ltd 2SK2329(S)

    N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Terminal Position: SINGLE; No. of Terminals: 2;
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    Vyrian 2SK2329(S) 53
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    2SK2329S Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2329S Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2329S Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2329(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2329S Kexin N-Channel MOSFET Original PDF
    2SK2329(S) Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2329S Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 10; Pch : 20; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: 0.03; RDS (ON) typ. (ohm) @2.5V: 0.04; Ciss (pF) typ: 1250; toff ( us) typ: 0.225; Package: DPAK (S) Original PDF
    2SK2329S Renesas Technology SMD, High Speed Power Amplifier, 30V 10A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK2329S Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2329S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF

    2SK2329S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK2329S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127


    Original     		2SK2329S O-252 PDF

    2SK23

    Abstract: 2SK2329S
    Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2329S TO-252 Features Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127 max +0.25


    Original     		2SK2329S O-252 2SK23 2SK2329S PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF