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    2SK241 Search Results

    2SK241 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2414(0)-Z-E2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2415-ZK-E1-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SK2414(0)-Z-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2415-Z-E2-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2414-Z-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, , / Visit Renesas Electronics Corporation
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    2SK241 Price and Stock

    NEC Electronics Group 2SK2414-Z-E2-AZ

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    Quest Components 2SK2414-Z-E2-AZ 8,599
    • 1 $1.54
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    • 100 $1.54
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    • 10000 $0.462
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    NEC Electronics Group 2SK2412-AZ(K)

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    Quest Components 2SK2412-AZ(K) 2,755
    • 1 $1.765
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    • 100 $1.765
    • 1000 $1.765
    • 10000 $0.5295
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    Renesas Electronics Corporation 2SK2415-Z-E1

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    Quest Components 2SK2415-Z-E1 836
    • 1 $2.18
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    • 100 $1.09
    • 1000 $0.872
    • 10000 $0.872
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    Renesas Electronics Corporation 2SK2414-AZ

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    Quest Components 2SK2414-AZ 133
    • 1 $2.076
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    Rochester Electronics 2SK2414-AZ 174 1
    • 1 $1.25
    • 10 $1.25
    • 100 $1.18
    • 1000 $1.06
    • 10000 $1.06
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    2SK241 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK241 Toshiba N-Channel MOSFET Original PDF
    2SK241 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK241 Unknown FET Data Book Scan PDF
    2SK241 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK241 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Scan PDF
    2SK241 Toshiba Silicon N channel field effect transistor for FM tuner, VHF and RF amplifier applications Scan PDF
    2SK241 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK241 Toshiba MOSFET / Transistors / GaAs MES FET Scan PDF
    2SK2410 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2410 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    2SK2410 NEC Semiconductor Selection Guide Original PDF
    2SK2411 NEC Switching N-Channel Power MOS FET Original PDF
    2SK2411 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2411 NEC MOS Field Effect Transistor Original PDF
    2SK2411 NEC Semiconductor Selection Guide Original PDF
    2SK2411-Z NEC Switching N-Channel Power MOS FET Original PDF
    2SK2411-Z NEC MOS Field Effect Transistor Original PDF
    2SK2412 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK2412 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF

    2SK241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d1308

    Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.


    Original     		PDF 2SK2411, 2SK2411-Z 2SK2411 d1308 d1297 D12971E 2SK2411-Z C10535E C11531E MP-25 MP-25Z

    SLA5038

    Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
    Text: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419


    Original     		PDF 2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 SLA5038 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848

    2SK1177

    Abstract: 2SK2420 2SK1180
    Text: 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419 22.0 35 EAS RDS (ON) max (VGS = 10V) Ciss (typ)


    Original     		PDF 2SK1188 2SK1189 2SK2419 2SK1190 2SK2420 2SK1191 2SK2421 2SK1192 2SK1712 2SK1185 2SK1177 2SK1180

    2SK2412

    Abstract: IEI-1213 MEI-1202 MF-1134 TC-8031
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2


    Original     		PDF 2SK2412 2SK2412 IEI-1209) IEI-1213 MEI-1202 MF-1134 TC-8031

    2SK2415

    Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.


    Original     		PDF 2SK2415, 2SK2415-Z 2SK2415 2SK2415-Z IEI-1213 MEI-1202 MF-1134

    2SK2417

    Abstract: 2SK2417 Equivalent
    Text: 2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2417 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) High forward transfer admittance : |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK2417 2SK2417 2SK2417 Equivalent

    NEC 2415

    Abstract: NEC JAPAN 2415 2SK2415
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415,2415-Z SWITCHING N-CHANNEL POWER MOS FET Description PACKAGE DRAWINGS Unit: mm TO-251 (MP-3) 1.5 −0.1 5.0 ±0.2 RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A) 2 5.5 ±0.2 1 RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)


    Original     		PDF 2SK2415 2415-Z O-251 NEC 2415 NEC JAPAN 2415

    1117

    Abstract: 1117 3.3 1117 A 33 CB12R CB-16BP-12B2 CB-12QP-01
    Text: •標準測定回路/Standard inspection circuit ■部品コード/Code for parts CB - 12 A P + B Z – 小型マグネチック発音体を表示 Small size magnetic type sound generator MOS-FET 2SK2410 （ON抵抗1Ω以下） ON resistance 1Ω or less


    Original     		PDF 2SK2410 CB09F CB09G CB09H CB12A CB12C CB12E CB12G CB12H CB12HN01 1117 1117 3.3 1117 A 33 CB12R CB-16BP-12B2 CB-12QP-01

    2SK2414

    Abstract: No abstract text available
    Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2414, 2414-Z NチャネルパワーMOSFET スイッチング用 外形図（単位：mm） 5.0 ±0.2 電源用途に最適です。 2 3 1.1 ±0.2 RDS（on）1 = 70 mΩ最大（VGS = 10 V, ID = 5.0 A）


    Original     		PDF 2SK2414, 2414-Z 2SK2414NMOSFET O-251MP-3 D13193JJ4V0DS M8E02 2SK2414

    Transistor D 2494

    Abstract: 2SK2413 IEI-1213 MEI-1202 MF-1134 TC-8032
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2413 is N-Channel MOS Field Effect Transistor de- in millimeter signed for high speed switching applications. FEATURES • Low On-Resistance


    Original     		PDF 2SK2413 2SK2413 IEI-1209) Transistor D 2494 IEI-1213 MEI-1202 MF-1134 TC-8032

    K2417

    Abstract: 2SK2417
    Text: 2SK2417 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2417 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.42Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.5S (標準)


    Original     		PDF 2SK2417 10VID SC-67 2-10R1B K2417 2002/95/EC) K2417 2SK2417

    k2417

    Abstract: transistor k2417 2SK2417 Equivalent 2SK2417
    Text: 2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2417 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK2417 k2417 transistor k2417 2SK2417 Equivalent 2SK2417

    2SK2410

    Abstract: IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2410 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2


    Original     		PDF 2SK2410 2SK2410 IEI-1209) IEI-1213 MEI-1202 MF-1134

    K2417

    Abstract: transistor k2417
    Text: 2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2417 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.42 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.)


    Original     		PDF 2SK2417 K2417 transistor k2417

    2SK2417

    Abstract: transistor marking 75s
    Text: TOSHIBA 2SK2417 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE tt-M O S V 2SK2417 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS 10 ±0.3


    OCR Scan     		PDF 2SK2417 2SK2417 transistor marking 75s

    2SK241

    Abstract: No abstract text available
    Text: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • Low Reverse TransferCapacitance Low Noise Figure High Power Gain Recommend Operation Voltage Unit in mm AÜMAX. : Crss = 0.035pF Typ.


    OCR Scan     		PDF 2SK241 035pF 100MHz 2SK241

    2SK241

    Abstract: 2SK24
    Text: TOSHIBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 FM TUNER, VHF AND RF AM PLIFIER APPLICATIONS. • • • • ¿am . Low Reverse Transfer Capacitance Crss = 0.035pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain Gps - 28dB (Typ.)


    OCR Scan     		PDF 2SK241 035pF 55MAX. 100MHz 2SK241 2SK24

    2SK241

    Abstract: No abstract text available
    Text: TO SH IBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 Unit in mm FM TUNER, VHF AND RF AMPLIFIER APPLICATIONS • • • • 4.2MAX. Low Reverse Transfer Capacitance Crss = 0.035 pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain


    OCR Scan     		PDF 2SK241 55MAX 2SK241

    RE LOG 2 TZ 11

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N -C hannel MOS Field Effect T ra n s is to r de­ PACKAGE DIMENSIONS in m illim e te rs s ig n e d f o r high speed s w itc h in g a pp licatio ns.


    OCR Scan     		PDF 2SK2410 2SK2410 RE LOG 2 TZ 11

    k2415

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2S K2415 is N-Channel MOS Field Effect Transistor designed in m illim eters for high voltage switching applications.


    OCR Scan     		PDF 2SK2415, 2SK2415-Z K2415

    2SK241

    Abstract: No abstract text available
    Text: TO SH IBA 2SK241 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK241 Unit in mm FM TUNER, VHF AND RF AMPLIFIER APPLICATIONS • • • • 4.2MAX. Low Reverse Transfer Capacitance Crss = 0.035 pF Typ. NF = 1.7dB (Typ.) Low Noise Figure High Power Gain


    OCR Scan     		PDF 2SK241 55MAX. 2SK241

    transistor marking 75s

    Abstract: No abstract text available
    Text: 2SK2417 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL MOS TYPE tt-M OSV <; k i 17 û HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •


    OCR Scan     		PDF 2SK2417 SC-67 2-10R1B transistor marking 75s

    2SK241

    Abstract: 2sk241 mos fet dual-gate DC bias of FET 2SK302
    Text: 3. 3-TERMINAL MOS FET FOR USE AT HIGH-FREQUENCIES 2SK241, 2SK302 nal injector terminal for mixer circuits, and an AGC terminal. However, there is another method as shown in Figure 3.1. This shows a typical high-frequency amplifier in a Hi-Fi tuner. Gate 2 in the figure is


    OCR Scan     		PDF 2SK241, 2SK302) 2SK241) 2SK882) 2SK241 2sk241 mos fet dual-gate DC bias of FET 2SK302

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N -C hannel M O S F ield E ffect T ra n s is to r d e ­ in m illim e te rs sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .


    OCR Scan     		PDF 2SK2412 2SK2412 100/i