2SK246 Search Results

k2466

Abstract: field effect transistor transistor k2466
Contextual Info: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 34 mΩ (typ.) z High forward transfer admittance

Contextual Info: TO SHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm

2SK246

Abstract: TOSHIBA 2SK246 2SK2463
Contextual Info: 2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm • High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)

K2466

Abstract: transistor k2466 k2466 datasheet 2SK2466
Contextual Info: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance

2SK2466

Contextual Info: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance

TOSHIBA 2-16F1B

Abstract: 2f3 transistor 2SK2467-Y 2F360
Contextual Info: TO SHIBA 2SK2467-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2467-Y Unit in mm HIGH POWER AMPLIFIER APPLICATION IL ' i â - 15.8 + 0.5 • High Breakdown Voltage : Vj gg = 180V • High Forward Transfer Admittance : |Yfs| = 4.0S Typ.)

2SK2463

Abstract: T100 S-AU
Contextual Info: Transistors Small switching 60V, 2A 2SK2463 •Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. •External dimensions (Units: mm)

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

nec 2501 kk

Abstract: TRANSISTOR NEC B77 TEA 1400 2SK2461 TC-8078 nec+2501+kk
Contextual Info: M O S ^ W s Jj I I I h 7 > y ' 7 $ M O S Field Effect T ran s is to r 2SK2461 MOS FET X 2SK2AQMm^~Jv ^ i m M •X - f 7 *$ 7 ? T & ‘J, & B 7 7? ^ a. I - 2 ig S iE !S § ^ > ^ S f f ljÉ K f t jS T 'T o i t 04 V ig li T' t >mt T' to Rds on) 1 = 8 0 m Q l i ;

Contextual Info: 2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications Unit: mm • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)

mosfet

Abstract: 2SK2463
Contextual Info: Transistors Small switching 60V, 2A 2SK2463 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01

Contextual Info: 2SK2463 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60.0 V(BR)GSS (V) I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)

2SK2463

Contextual Info: Transistors Small switching 60V, 2A 2SK2463 •F e a tu re s 1) E x te rn a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) L o w -v o lta g e d riv e (4V).

2SK246

Abstract: TOSHIBA 2SK246
Contextual Info: T O S H IB A 2SK246 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK246 Unit in mm FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT . 5.1 M AX. IMPEDANCE AM PLIFIER CIRCUIT APPLICATIONS • High Breakdown Voltage : V • High Input Impedance

2SK2461

Abstract: IEI-1213 MEI-1202 MF-1134 DE 9411
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2461 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 10.0 ±0.3

Contextual Info: TOSHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • 4V Gate Drive • Low Drain-Sorce ON Resistance

Contextual Info: TO SHIBA 2SK2467-Y TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2467-Y HIGH PO W ER AM PLIFIER APPLICATION Unit in mm 15.8±0.5 • 3.5 i zf3.6±0.2 High Breakdown Voltage : Vjjgg = 180V • High Forward Transfer Admittance : |Yfs| = 4.0S Typ.

MOSFET 300V

Abstract: 2SK2469-01MR
Contextual Info: 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - 1Ω 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2466

Contextual Info: TOSHIBA 2SK2466 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 2SK2466 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • 4V Gate Drive

2SK2469-01MR

Contextual Info: '95 No. 11 F U J I V4># iw o M s iT it e u e *,<W*|; 4^ ^ y |i< iu v s <|#i t i l *±W * imma.b- _ ±/\7-M0SFET FAP-n 5 1 3 0 0 V /5 A 2SK2469-01MR N“L'V ^ ; u x > /\> X ^ > h®/N°7-M0SFET mm N-channel enhancement mode POWER MOSFET

MOSFET 300V

Abstract: 300V series regulators
Contextual Info: FUJI 2SK2469-01MR N-channel MOS-FET FAP-II Series 300V > Features - IQ 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2460N

Abstract: 2SK2460 251C Ol05
Contextual Info: Transistors Switching 250V, 5A 2SK2460N •E x te rn a l dim ensions (Units: mm) 9 Features 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G a te -so u rce v o lta g e g u ara ntee d at V gss = ± 3 0 V . 5) Easily designed drive circuits.

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )