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    2SK258 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    2SK2586-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 60A 10Mohm To-3P Visit Renesas Electronics Corporation
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    2SK258 Price and Stock

    Renesas Electronics Corporation 2SK2586(E)

    Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-3P Tube
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    Chip1Stop 2SK2586(E) 755
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    2SK258 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK258 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK258 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK258 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2580 Panasonic Silicon N-Channel Power F-MOS Scan PDF
    2SK2581 Panasonic Silicon N-Channel Power F-MOS Scan PDF
    2SK2582 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2582 Hitachi Semiconductor FET Transistor, Silicon N-Channel MOSFET Original PDF
    2SK2582 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2586 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2586 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2586 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2586 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2586-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2588 Panasonic Silicon N-Channel Power F-MOS Scan PDF
    2SK258H Hitachi Semiconductor Silicon N-Channel MOS FET, High Power Switching, High Freq. Power Amplifier Scan PDF
    2SK258(H) Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK258(H) Unknown FET Data Book Scan PDF
    2SK258H Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK258H Unknown Shortform Datasheet & Cross References Data Short Form PDF

    2SK258 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate


    Original     		PDF 2SK2586 D-85622 Hitachi DSA001652

    Untitled

    Abstract: No abstract text available
    Text: 2SK2588 Power F-MOS FETs 2SK2588 Silicon N-Channel Power F-MOS Unit : mm • Features ● High-speed ● Low 4.6±0.2 ON-resistance ø3.2±0.1 2.9±0.2 9.9±0.3 drive ● Solenoid ● Motor 13.7 -0.2 ● Non-contact +0.5 ■ Applications relay drive drive


    Original     		PDF 2SK2588 O-220E

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358C Z 4th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK2586 ADE-208-358C D-85622 Hitachi DSA00276

    SC-46

    Abstract: 2SK1401 2SK2582 Hitachi DSA00116
    Text: 2SK2582 Silicon N Channel MOS FET Application TO–220AB High speed power switching Features D 2 • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 1 G


    Original     		PDF 2SK2582 220AB SC-46 2SK1401 2SK2582 Hitachi DSA00116

    2SK25

    Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
    Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)


    Original     		PDF 2SK2586 2SK25 2SK2529 2SK2586 PE-50 Hitachi DSA00116

    2SK2529

    Abstract: 2SK2586 Hitachi DSA00336
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G


    Original     		PDF 2SK2586 ADE-208-358 2SK2529 2SK2586 Hitachi DSA00336

    2SK2586

    Abstract: 2SK2586-E PRSS0004ZE-A SC-65
    Text: 2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 Previous: ADE-208-358C Rev.5.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2586 REJ03G1020-0500 ADE-208-358C) PRSS0004ZE-A 2SK2586 2SK2586-E PRSS0004ZE-A SC-65

    Hitachi DSA001651

    Abstract: No abstract text available
    Text: 2SK2582 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features N N N N N Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline


    Original     		PDF 2SK2582 O-220AB Hitachi DSA001651

    Untitled

    Abstract: No abstract text available
    Text: 2SK2580 Power F-MOS FETs 2SK2580 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown ● Low-voltage drive ● Non-contact ● Solenoid ● Motor


    Original     		PDF 2SK2580 2SK2580 O-220E

    Untitled

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)


    Original     		PDF 2SK2586

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate


    Original     		PDF 2SK2586 Hitachi DSA002713

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2582 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-220AB


    Original     		PDF 2SK2582 O-220AB D-85622 Hitachi DSA002780

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2582 Silicon N-Channel MOS FET ADE-208-1364A Z 2nd. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter


    Original     		PDF 2SK2582 ADE-208-1364A O-220AB D-85622 Hitachi DSA00276

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1


    Original     		PDF 2SK2586 ADE-208-358 D-85622 Hitachi DSA002780

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan     		PDF 2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151

    2SK2588

    Abstract: RL502
    Text: Panasonic Power F-M OS FETs 2SK2588 Silicon N-Channel Power F-MOS • Features • • • • High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • • • • Non-contact relay Solenoid drive Motor drive


    OCR Scan     		PDF 2SK2588 2SK2588 RL502

    C1030

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance RDSK.ni = 7 m£2 lyp. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P I 1 2 Ui 3 1. Gate 2. Drain


    OCR Scan     		PDF 2SK2586 ADE-208-358 C1030

    Untitled

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 3. Source


    OCR Scan     		PDF 2SK2586 D-85622

    Untitled

    Abstract: No abstract text available
    Text: 2SK2582 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter


    OCR Scan     		PDF 2SK2582 75Hitachiâ

    2SK2586

    Abstract: No abstract text available
    Text: A D E - 2 0 8 - 3 5 8 C Z 2SK2586 Silicon N Channel MOS FET 4th. Edition HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V souece


    OCR Scan     		PDF 2SK2586 2SK2586

    2sk2581

    Abstract: No abstract text available
    Text: Panasonic P o w e r F -M O S F E T s 2SK2581 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications


    OCR Scan     		PDF 2SK2581 2sk2581

    2SK2580

    Abstract: AS0401
    Text: Panasonic Power F-MOS FETs 2SK2580 Tentative Silicon N-Channel Power F-MOS • Features • • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • •


    OCR Scan     		PDF 2SK2580 AS0401

    2SK2581

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2581 Tentative Silicon N-Channel Power F-MOS • Features • Avalanche energy capability guaranteed • High-speed switching • Low ON-resistance • No secondary breakdown • Low-voltage drive ■ Applications • Non-contact relay


    OCR Scan     		PDF 2SK2581 2SK2581

    2SK2588

    Abstract: VDS1
    Text: Panasonic Power F-M OS FETs 2SK2588 Silicon N-Channel Power F-MOS • Features • • • • High-speed switching Low ON-resistance No secondary breakdown Low-voltage drive ■ Applications • • • • • Non-contact relay Solenoid drive Motor drive


    OCR Scan     		PDF 2SK2588 2SK2588 VDS1