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    2SK26 Search Results

    2SK26 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2684STL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 28Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
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    2SK26 Price and Stock

    Rochester Electronics LLC 2SK2623-TL-E

    N-CHANNEL SILICON MOSFET
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    DigiKey 2SK2623-TL-E Bulk 63,000 437
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    Rochester Electronics LLC 2SK2628LS

    N-CHANNEL SILICON MOSFET
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    DigiKey 2SK2628LS Bulk 4,166 666
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    Rochester Electronics LLC 2SK2624LS

    N-CHANNEL SILICON MOSFET
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    DigiKey 2SK2624LS Bulk 1,886 701
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    Rochester Electronics LLC 2SK2624LS-CD11

    2SK2624LS - N-CHANNEL SILICON MO
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    DigiKey 2SK2624LS-CD11 Bulk 500 370
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    Rochester Electronics LLC 2SK2631-E

    MOSFET
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    DigiKey 2SK2631-E Bulk 450 833
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    2SK26 Datasheets (396)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK26 Unknown FET Data Book Scan PDF
    2SK260 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK260 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK260 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK260 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK260 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2SK2600 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2600 Toshiba Original PDF
    2SK2601 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Original PDF
    2SK2601 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2601 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2601 Toshiba Original PDF
    2SK2601 Toshiba N-Channel Enhancement MOSFET Scan PDF
    2SK2601(F) Toshiba 2SK2601 - MOSFET N-CH 500V 10A 2-16C1B Original PDF
    2SK2602 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2602 Toshiba N-Channel MOSFET Original PDF
    2SK2602 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2602 Toshiba Original PDF
    2SK2602 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2602 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications Scan PDF
    ...

    2SK26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2646-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2646-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2649-01R

    Untitled

    Abstract: No abstract text available
    Text: 2SK2639-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 0,65Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original     		PDF 2SK2639-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2647-01MR N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2647-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		PDF 2SK2605

    Untitled

    Abstract: No abstract text available
    Text: 2SK2687-01 N-channel MOS-FET FAP-IIS Series 30V > Features - 0,01Ω ±50A 60W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters


    Original     		PDF 2SK2687-01

    K2608

    Abstract: 2SK2608 2-10P1B
    Text: 2SK2608 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ 2SK2608 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original     		PDF 2SK2608 O-220AB SC-46 2-10P1B K2608 2002/95/EC) K2608 2SK2608 2-10P1B

    K2613

    Abstract: toshiba k2613 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 910lled K2613 toshiba k2613 2SK2613

    K2606

    Abstract: 2SK2606
    Text: 2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2606 K2606 2SK2606

    K2628

    Abstract: transistors k2628 2sk2628 2SK2628ALS ENA0363A ENA0363
    Text: 2SK2628ALS Ordering number : ENA0363A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2628ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SK2628ALS ENA0363A A0363-5/5 K2628 transistors k2628 2sk2628 2SK2628ALS ENA0363A ENA0363

    K2632

    Abstract: 2SK2632LS 2SK2632 TA-2380 K263 TO-220FI-LS
    Text: 注文コード No. N 5 5 3 1 B 2SK2632LS No. N 5 5 3 1 B N2000 新 半導体ニューズ No.N5531A とさしかえてください。 2SK2632LS 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。


    Original     		PDF 2SK2632LS N2000 N5531A IT00748 IT00754 IT00753 K2632 2SK2632LS 2SK2632 TA-2380 K263 TO-220FI-LS

    diode SS 3

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2699 diode SS 3

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2614 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE L2- tt-M O S V 2SK2614 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •


    OCR Scan     		PDF 2SK2614 20kil) --20A

    2SK2679

    Abstract: 2SK2679(T)
    Text: TO SHIBA 2SK2679 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2679 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF 2SK2679 0-84H 20kfl) 2SK2679 2SK2679(T)

    2SK2632

    Abstract: 2SK2636 TS9938 2SK2436 2SK2634
    Text: • AP Series Lineup New H-lll Series VDSS = 800V, N- channel Absolute maximum ratings atTa =25°C Type No. Package Vtm m 2SK2631 TP 2SK2632 TO-220FI TS9928 TO-220FI A ^DS(on) typ/max at V«*=15V Cita Crss typ (PF) Qg typ <nC) (300) (45) (8) 3.6/4.8 550


    OCR Scan     		PDF 2SK2631 2SK2632 TS9928 2SK2633 2SK2634 2SK2435 TS9934 TS9938 TS9936 2SK2635 2SK2636 2SK2436

    2-10P1B

    Abstract: 2SK2608
    Text: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)


    OCR Scan     		PDF 2SK2608 2-10P1B

    2SK2679

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2679 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2679 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 ^3.2 ± 0.2


    OCR Scan     		PDF 2SK2679

    pj 87 diode

    Abstract: diode pj 87 te2s 2SK2653-01R
    Text: F U JI StHlELTUtìliE N-channel MOS-FET 2SK2653-01R FAP-IISSeries 900V Features 2,5 £2 6A 80 W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 3 0 V G uarantee Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2653-01R Vcc-80V; pj 87 diode diode pj 87 te2s

    Untitled

    Abstract: No abstract text available
    Text: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •


    OCR Scan     		PDF 2SK2685

    2SK2647-01

    Abstract: 0/2SK2647-01
    Text: FU JI 2SK2647-01 MR N-channel MOS-FET FAP-IIS Series 800V > Features 4Q 4A 40 W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications


    OCR Scan     		PDF 2SK2647-01 DDOi4b71 0/2SK2647-01

    2SK2645

    Abstract: 2SK2645-01
    Text: F U JI 2SK2645-01 MR N-channel MOS-FET FAP-IIS Series 600V > Features - \,2Q. 9A 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated T O -2 2 0 F 1 5


    OCR Scan     		PDF 2SK2645-01 2SK2645

    k2699

    Abstract: *K2699 2SK2699 SC-65
    Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 M A X.


    OCR Scan     		PDF 2SK2699 Pulse160 ID-12A k2699 *K2699 2SK2699 SC-65

    2SK2689-01MR

    Abstract: T0-220F
    Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2689-01 MR SPEC. NO. : Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED _— /. Vo Y 0?57-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2689-01MR


    OCR Scan     		PDF 2SK2689-01MR 57-R-004a 2SK2689-01 T0-220F 0257-R-0Ã 0257-R-003a 0957-R 2SK2689-01MR

    K2602

    Abstract: 2SK2602 SC-65 transistor marking 6A
    Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : Rd S (O N )~ 0.9O (Typ.)


    OCR Scan     		PDF 2SK2602 K2602 2SK2602 SC-65 transistor marking 6A