2SK2796L

Abstract: 2SK2796S Hitachi DSA00117
Contextual Info: 2SK2796L, 2SK2796S Silicon N Channel MOS FET High Speed Power Switching Target Specification 1st. Edition October 1996 Features • • • Low on-resistance RDS on = 0.12Ω typ. 4V gate drive devices. High speed switching Outline DPAK 4 4 D 2 1 2 G 1 3

Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.

2SK2794

Abstract: Hitachi DSA002780
Contextual Info: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-465 1st. Edition Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elecro Static Discharge.

Contextual Info: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown 6.5±0.1 5.3±0.1 4.35±0.1 ■ Absolute Maximum Ratings TC = 25°C

2SK2792

Contextual Info: Transistors Switching 600V, 4A 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel

F10F35VX2

Abstract: 2SK2799
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.

mosfet 600v

Abstract: mosfet 600v 600V MOSFET 600V,4A mosfet 600V N-CHANNEL parallel mosfet parallel MOSFET Transistors 2SK2792
Contextual Info: Transistors Switching 600V, 4A 2SK2792 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel

2SK2797

Contextual Info: Panasonic P o w er F -M O S FE T s 2SK2797 Tentative S ilic o n N - C h a n n e l M O S U n it : m m For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns

Contextual Info: Transistors Switching 600V, 4A 2SK2792 •F e a tu re s 1) • E x te r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d

Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification • Features • Avalanche energy capability guaranteed : EAS > lOmJ • High-speed switching : tf=15ns

Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(oii) = 0.12Í2 typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 Í I 1. 2. 3. 4. G ate Drain S ource Drain ADE-208-534C (Z)

Hitachi 45 DX

Abstract: Hitachi DSA002780
Contextual Info: 2SK2795 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-466 A 2nd. Edition Features • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ηD = 40 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Electro Static Discharge.

333Q

Abstract: 2SK2790
Contextual Info: Panasonic P o w e r F -M O S F E T s 2SK2790 Tentative Silicon N-Channel Power F-MOS • Features • Low ON-resistance Rds(oii) • High-speed switching • No secondary breakdown ■Applications • High-speed switching • Motor drive Absolute Maximum Ratings

2SK2796

Abstract: Hitachi DSA00117
Contextual Info: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 4 4 D 1 2 3 G S 1 2

Contextual Info: 2SK2797 Power F-MOS FETs 2SK2797 Tentative Silicon N-Channel MOS Unit : mm For high-speed switching For high-frequency power amplification 6.5±0.1 5.3±0.1 ● High-speed switching : tf=15ns ● No secondary breakdown Unit VDSS 200 V Gate-Source voltage

Contextual Info: 2SK758 Power F-MOS FETs 2SK2790 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● ● High-speed switching 6.0±0.5 ● No secondary breakdown ■ Applications ● Motor drive 1.0±0.1 1.5max. 1.1max. 2.0 High-speed switching 10.5min. ●

Contextual Info: 2SK2796 L , 2SK2796 (S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance EWn) = 0.12Otyp. • 4V gate drive devices. • High speed switching Outline DPAK i # 1. 2. 3. 4. 1 122 G ate Drain Source Drain ADE-208-534 A

2SK2797

Contextual Info: Power F-MOS FETs 2SK2797 Silicon N-Channel Power F-MOS FET • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Avalanche energy capacity guaranteed: EAS > 10mJ ● High-speed switching: tf = 15ns ● No secondary breakdown Symbol Ratings Unit Drain to Source breakdown voltage

Contextual Info: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. ►External dim ensions (Unit: mm) ,+ 0 .3 3 - -+ 0 .3 0.1 R -0 .1 ¿ 3 .2 ± 0 .g •S tru c tu re Silicon N-channel M O SFET transistor ,2.54±0,5 (1 )(2){3)

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

10EFI

Contextual Info: Transistors Switching 500V, 5A 2SK2793 •F e a tu re s • E x t e r n a l d im e n s io n s {U nit: m m ) 1) L o w on -re sista n ce. 2) H ig h -s p e e d s w itc h in g . 3 ) W id e S O A (safe o p e ra tin g area). 4 ) G a te -s o n rce vo lta g e g n a ra n te e d

2SK2791

Contextual Info: Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SK2791] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6

Contextual Info: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI Features • H igh power output, H ig h gain, H ig h e fficie n cy PG = 8.0dB, Pout = 3 ld B m , riD = 60 % m in. f = 8 36.5M H z • Com pact package capable o f surface m ounting Outline RP8P

2sk2799

Abstract: F10F35VX2 mosfet 350v 10A
Contextual Info: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.